Design of a High-Power V-Band Klystron With Internal Coupling Multigap Cavity
Bingchuan XieRui ZhangYong WangHuanhuan WangXu ZhangQuangui ChaoKegang LiuZhi-Hui GengYunfeng LiaoXiudong Yang
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In this article, the design study of a V-band klystron with an internal coupling cavity is presented. The effective characteristic impedance of the internal coupling cavity is approximately 25% higher than that of the external coupling cavity when both operate at Keywords:
Klystron
The results of the bandwidth optimization of a cluster cavity klystron are presented. Multi-beam klystron cluster schemes permit the following klystron bandwidth parameters to be improved: bandwidth value, efficiency, frequency response uniformity.
Klystron
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Klystron
Helical resonator
Extremely high frequency
Dielectric resonator antenna
Q factor
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This paper details the development and test of a 2.2% bandwidth, 95 GHz Extended Interaction Klystron (EIK). This bandwidth was achieved with a peak RF power of ~1 kW (100 W average) while maintaining a compact size and weight (less than 6 kg).
Klystron
W band
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The development of an S-band klystron with bandwidth of more than 11% is introduced in this paper. At the peak power level of 800 kW, the efficiency of more than 30%, the gain of more than 40 dB, the equal-driving (constant input power across the bandwidth) relative instantaneous bandwidth of 11.2%, the average power of larger than 8.8 kW, and the power fluctuation within bandwidth of less than 1.5 dB are obtained in this klystron. The design considerations, simulation, and test results are presented and the techniques adopted to extend the bandwidth of the klystron are described.
Klystron
S band
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The development of broadband high power klystron has being done in the Institute of Electronics, Chinese Academy of Sciences (IECAS), and the breakthrough of the bandwidth of klystron has been obtained continuously. In S-band, after the achievement of 10% and 11% bandwidth, the relative instantaneous bandwidth of 12% has been brought to success in 2009. The paper introduces the design, simulation and test results of this klystron in detail.
Klystron
S band
Broad band
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Klystron is a type of microwave vacuum electron device, which converts the electron energy into microwave energy. The klystron has maximum peak power and average power comparing with other microwave vacuum electron devices. The klystron has widespread applications on accelerator, radar system, communication and TV broadcast system, RF heater, and so on. Since Varian brothers invented the first klystron, several hundred types of klystrons have been developed in recent 70 years. The art of technical state and the trend of the klystron are described briefly in this paper. In future, klystron would be developed into higher power, higher frequency, and improved continually on bandwidth, efficiency, and lifetime.
Klystron
Microwave transmission
Microwave power
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Summary form only given, as follows. The klystron is the oldest of the microwave tubes, but continues to be essential to a number of user communities, principally that of experimental physics, which was also responsible for its invention. The advent of traveling-wave tubes and of the transistor has limited the uses of the klystron to applications requiring a high pf/sup 2/ product. For those applications, it remains the amplifier of choice, particularly if cost is considered. The paper describes some new klystron configurations and their potential future. These include multi-beam and sheet-beam klystrons, PPM klystrons, and millimeter-wave klystrons, mass-produced with lithographic techniques.
Klystron
Traveling-wave tube
Extremely high frequency
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This letter introduces the design ideas, simulation and test results of an S-band klystron with bandwidth of 11%, which was developed by the Institute of Electronics, Chinese Academy of Sciences (IECAS). On the peak power level of 800 kW, the efficiency of klystron is more than 30%; the gain is more than 41 dB; the equal-driving relative instantaneous bandwidth is over 11%; the average power is larger than 8 kW, and the power fluctuation within bandwidth is less than 1.5 dB.
Klystron
S band
Power Electronics
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In this paper, a high power and broad bandwidth extended interaction klystron (EIK) in G-band with multi-gap and mode overlap is proposed. We adopt larger cavity gap number than tradition research to achieve improvement of output characteristic. The high frequency characteristics and electric field distribution of modes in output cavities with different number of gaps are analyzed. Finally, the output cavity gap number is determined as 17. We optimize the structure and operating conditions to ensure the good stability of system. The PIC simulation results show that with increase of the frequency, the output cavity can realize mode overlap and the bandwidth is expanded to 1.56 GHz, which is much wider than our previous research. The PIC predicts 829 W output power, 46.2 dB gain and 17.8% efficiency. The simulation results indicate that the method and scheme we proposed can further improve the power and bandwidth of G-band EIK.
Klystron
Power bandwidth
Mode (computer interface)
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