Moiré Fringe Method via Scanning Transmission Electron Microscopy
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Abstract Moiré fringe, originated from the beating of two sets of lattices, is a commonly observed phenomenon in physics, optics, and materials science. Recently, a new method of creating moiré fringe via scanning transmission electron microscopy (STEM) has been developed to image materials’ structures at a large field of view. Moreover, this method shows great advantages in studying atomic structures of beam sensitive materials by significantly reduced electron dose. Here, the development of the STEM moiré fringe (STEM‐MF) method is reviewed. The authors first introduce the theory of STEM‐MF and then discuss the advances of this technique in combination with geometric phase analysis, annular bright field imaging, energy dispersive X‐ray spectroscopy, and electron energy loss spectroscopy. Applications of STEM‐MF on strain, defects, 2D materials, and beam‐sensitive materials are further summarized. Finally, the authors′ perspectives on the future directions of STEM‐MF are presented.Keywords:
Moiré pattern
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The chapter contains sections titles: Introduction Scanning Transmission Electron Microscopy Imaging Modes Scanning Transmission Electron Microscopy Theory Inelastic Scattering and Secondary Radiations Conver gent-Beam and Nanodiffraction Coherent Nanodiffraction, Electron Holography, Ptychology Holography STEM Instrumentation Applications of Scanning Transmission Electron Microscopy References
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Abstract Transmission electron microscopy (TEM) with low-energy electrons has been recognized as an important addition to the family of electron microscopies as it may avoid knock-on damage and increase the contrast of weakly scattering objects. Scanning electron microscopes (SEMs) are well suited for low-energy electron microscopy with maximum electron energies of 30 keV, but they are mainly used for topography imaging of bulk samples. Implementation of a scanning transmission electron microscopy (STEM) detector and a charge-coupled-device camera for the acquisition of on-axis transmission electron diffraction (TED) patterns, in combination with recent resolution improvements, make SEMs highly interesting for structure analysis of some electron-transparent specimens which are traditionally investigated by TEM. A new aspect is correlative SEM, STEM, and TED imaging from the same specimen region in a SEM which leads to a wealth of information. Simultaneous image acquisition gives information on surface topography, inner structure including crystal defects and qualitative material contrast. Lattice-fringe resolution is obtained in bright-field STEM imaging. The benefits of correlative SEM/STEM/TED imaging in a SEM are exemplified by structure analyses from representative sample classes such as nanoparticulates and bulk materials.
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We demonstrate that high-angle annular dark-field imaging in scanning transmission electron microscopy allows for quantification of the number and location of all atoms in a three-dimensional, crystalline, arbitrarily shaped specimen without the need for a calibration standard. We show that the method also provides for an approach to directly measure the finite effective source size of a scanning transmission electron microscope.
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The prelims comprise: Introduction Scanning Transmission Electron Microscopy Imaging Modes Scanning Transmission Electron Microscopy Theory Inelastic Scattering and Secondary Radiations Conver gent-Beam and Nanodiffraction Coherent Nanodiffraction, Electron Holography, Ptychology Holography STEM Instrumentation Applications of Scanning Transmission Electron Microscopy References
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