Strain control in graphene on GaN nanowires: Towards pseudomagnetic field engineering
Jakub KierdaszukP. DąbrowskiMaciej RogalaPaweł KrukowskiAleksandra PrzewłokaAleksandra KrajewskaWawrzyniec KaszubMarta SobańskaZ. R. ŻytkiewiczVitaly Z. ZubialevichP.J. KowalczykA. WysmołekJohannes BinderAneta Drabińska
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Gallium nitride nanowire and nanorod substrates are prospective platforms allowing to control the local strain distribution in graphene films on top of them, resulting in an induction of pseudomagnetic fields. AFM measurements performed in a HybriD mode complemented by SEM allow for a detailed visualization of the strain distribution on graphene surface. Graphene in direct contact with supporting regions is tensile strained, while graphene located in-between is characterized by lower strain. Characteristic tensile strained wrinkles also appear in the areas between the supporting regions. A positive correlation between strain gradient and distances between borders of supporting regions is observed. These results are confirmed by analysis of the Raman D' band intensity, which is affected by an enhancement of intravalley scattering. Furthermore, scanning tunneling spectroscopy shows a local modification of the density of states near the graphene wrinkle and weak localization measurements indicate the enhancement of pseudomagnetic field-induced scattering. Therefore, we show that nanowire and nanorod substrates provide strain engineering and induction of pseudomagnetic fields in graphene. The control of graphene morphology by modification of distances between supporting regions is promising for both further fundamental research and the exploration of innovative ways to fabricate pseudomagnetic field-based devices like sensors or filters.Keywords:
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Mg germanide nanorods were successfully fabricated by interdiffusion of the Mg into Ge nanorods on Si substrates at 425 oC for 0.5 h. It was observed that the Mg2Ge nanorod structures were formed by an interdiffusion process between the deposited Mg atoms and the Ge nanorods. Moreover, Mg2Si nanorods were formed by additional interdiffusion between the Mg2Ge nanorods and the Si substrates at 425 oC for 4 h. The structural properties of the Mg2Ge and Mg2Si nanorods were characterized, and the growth evolution of the structural and morphological properties of the nanorods was discussed.
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