NiOx‐Seeded Self‐Assembled Monolayers as Highly Hole‐Selective Passivating Contacts for Efficient Inverted Perovskite Solar Cells
Juanjuan SunChunhui ShouJingsong SunXin‐Long WangZhenhai YangYing ChenJiarui WuWeichuang YangHanlin LongZhiqin YingXi YangJiang ShengBaojie YanJichun Ye
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Abstract:
Self‐assembled monolayers (SAMs) have emerged as effective carrier transport layers in perovskite (PVK) solar cells because of their unique ability to manipulate interfacial property, as well as simple processing and scalable fabrication. However, the defects and pinholes derived from their sensitive adsorption process inevitably deteriorate the final device performance. Herein, a sputtered nickel oxide (NiO x ) interlayer is used as a seed layer to promote the adsorption of the [2‐(3,6‐dimethoxy‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid (MeO‐2PACz) SAM on the indium tin oxide (ITO) substrate. The promoted adsorption is attributed to the enhanced tridentate binding between MeO‐2PACz and NiO x relative to the conventional bidentate binding between MeO‐2PACz and ITO. In addition, the NiO x modification can simultaneously improve the passivation ability and hole‐selectivity of the MeO‐2PACz, provide a favorable energy‐level alignment at the ITO/PVK interface, and prevent a direct contact between PVK and ITO. As a consequence, this NiO x ‐seeded MeO‐2PACz hole transport layer enables a significantly enhanced power conversion efficiency of 19.9% in comparison with 18.4% of the control device. This work provides an effective strategy to improve the performance of the SAM‐based photoelectric device.Keywords:
Non-blocking I/O
Passivation
Nickel oxide
Indium tin oxide
Photocurrent
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Abstract NiO x hole transporting layer has been extensively studied in optoelectronic devices. In this paper, the low temperature, solution–combustion‐based method is employed to prepare the NiO x hole transporting layer. The resulting NiO x thin films show better quality and preferable energy alignment with perovskite thin film compared to high temperature sol–gel‐processed NiO x . With this, high‐performance perovskite solar cells are fabricated successfully with power conversion efficiency exceeding 20% using a modified two‐step prepared MA 1− y FA y PbI 3− x Cl x perovskite. This efficiency value is among the highest values for NiO x ‐based devices. Various characterizations and analyses provide evidence of better film quality, enhanced charge transport and extraction, and suppressed charge recombination. Meanwhile, the device exhibits much better device stability compared to sol–gel‐processed NiO x and poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)‐based devices.
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Abstract New photoanodes built from Fe 2 O 3 /NiO heterostructures were successfully prepared, and their morphologies and structures were systematically characterized by SEM, XRD, TEM, and HRTEM. The photoelectrochemical (PEC) properties of the heterostructures, including transient photocurrent density versus time ( I – t ) curves, photocurrent versus potential ( I – V ) curves, and incident‐photon‐to‐current efficiency (IPCE) curves, were also researched in depth. The p–n heterostructure composed of NiO and Fe 2 O 3 results in the improvement of electron transfer between Fe 2 O 3 and NiO.
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A three dimensional (3D) nanostructured nickel oxide (NiO) electrode was fabricated by an electrodeposition method employing nickel foam (NF) as a scaffold and used for glucose detection. Taking advantage of the synergetic effect of NF and NiO, the 3D NiO/NF electrode shows excellent performance in glucose detection.
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Solution-processed nickel oxide (NiO) nanoparticles (NPs) were used as a hole injection layer (HIL) to enhance the performance of quantum dot light-emitting diodes (QLEDs). NiO NP solution was synthesized by a sol-gel method. We synthesized NiO NPs of sizes 10 nm, 20 nm, and 30 nm by controlling the annealing temperature of an NiO NP powder-like precipitate. The different-sized NiO NPs were applied on QLEDs as HILs, and exhibited good hole injection properties. All layers of the QLEDs except the electrodes were fabricated using a solution process. The QLED with 10 nm NiO NPs had the lowest turn-on voltage of 2.5 V, indicating that NiO NP HIL based on 10 nm NPs reduced the energy barrier for hole injection into the hole transport layer (HTL) most. The maximum luminance and luminous efficiency of the QLED with NiO NPs of 10 nm were 17,818 cd/m2 and 7.11 cd/A, respectively.
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Abstract A nickel oxide (NiO x ) hole transport layer was made from nickel oxide powder by a simple process and non-stabilizer or chelating agent. We used ethanol as the main solvent and less than 2% nitric acid as the co-solvent. The formation reaction mechanism of the NiO x thin film was also studied. Perovskite solar cells (PSCs) with an optimum thickness of 70 nm exhibited a power conversion efficiency as high as 12.99%, which is superior to those of PSCs with their counterparts. The moisture stability of NiO x - based devices (non-encapsulated) remained above 70% of their initial output after 700 h storage at ambient conditions.
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Abstract Solution‐processed nickel oxide nanocrystals (NiO x NCs) ink can be facilely applied to deposit NiO x thin films as the hole transport layer (HTL) for perovskite solar cells (PSCs). Both the efficiency and stability of the corresponding PSCs depend significantly on the size and the energy levels of the as‐synthesized NiO x NCs; however, previous studies have shown that these two aspects can be hardly controlled synchronously to maximize the device performance. Herein, a novel synthesis of highly dispersed NiO x NCs is demonstrated by employing tetraalkylammonium hydroxides (TAAOHs, alkyl = methyl, ethyl, propyl, butyl) as precipitating bases, where the varied alkyl chain lengths of TAAOHs enable the size control of the NiO x NCs and the subsequent altering of their Ni 3+ contents, leading to tunable energy levels of the NiO x thin films. With the longest butyl chain, the smallest crystal size and the optimal energy level alignment at the NiO x /perovskite interface are achieved. After further passivating the detrimental Ni 3+ species on the surface of NiO x HTL, a remarkable power conversion efficiency (PCE) approaching 23% is obtained, which is one of the highest PCEs reported for NiO x ‐based inverted PSCs. Furthermore, the unencapsulated device exhibits excellent ultraviolet stability, which maintains ≈ 87% of its PCE after 200 h exposure.
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Perovskite has been adopted as photosensitizer to develop solid state p-type mesoporous nickel oxide (NiO) dye-sensitized solar cells (DSCs) employing PCBM as electron conductor. The optimal device achieved an efficiency of 1.5% with an impressive open circuit voltage of more than 800 mV, which is the record of solar cell based on p-type mesoporous NiO electrode. This result shows the potential for building highly efficient p-type NiO solar cells as stand-alone device.
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