Abstract:
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.Keywords:
Characterization
Spin-on dopant technique has been investigated in the paper. The boron and phosphorus were used as p- and n-type dopant sources and were deposited on silicon substrates, followed by the baking process to evaporate the solvents from spin-on dopant layers. The standard drive-in process was applied to diffuse and activate the dopants. The curing temperature varied from 150 to 200 oC to investigate the temperature effect on dopant activation. It is suggested that for our selected spin-on dopant sources, the curing temperature and time of 175 oC and 60 minutes would lead to the best result of dopant activation during drive-in process, evidenced by the lowest sheet resistance, which was measured using four-point probe measurement method.
Dopant Activation
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Abstract This article provides a general introduction of materials characterization and describes the principles and applications of a limited number of techniques that are most commonly used to characterize the composition and structure of metals used in engineering systems. It briefly describes the classification of materials characterization methods including, bulk elemental characterization, bulk structural characterization, microstructural characterization, and surface characterization. Further, the article reviews the selection of materials characterization methods most commonly used with metals.
Characterization
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Current dopant diffusion theory is based on dopant-point-defect interaction, and assumes that the number of dopant-defect pairs is much smaller than the unpaired dopant concentration. In cases where a large number of excess defects are created from implantation damage, this may no longer be a valid assumption. A new derivation of the dopant and defect equations is presented which is valid for any concentration of dopant-defect pairs.
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Dopant and non‐dopant OLEDs were fabricated for testing four TADF emitters, having EL of blue to greenish blue color. The tetraphenylbenzene (4Ph)‐containing emitters have been demonstrated having a higher light outcoupling efficiency for dopant devices and a superior IQE for the non‐dopant devices.
Quantum Efficiency
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The dopant (A) that is intimately associated with inherently conducting polymers (ICPs) such as polypyrroles and polyanilines plays a critical role in determining the performance of these materials as corrosion protection coatings. The dopant determines the processability of the ICP in that it can influence solution solubility and/or the potential at which the polymer is electrodeposited. The dopant also influences the redox and chemical properties of the resultant coating and so affecting its ability to provide corrosion protection.
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We present the results of first-principles simulations of dopant segregation to grain boundaries (GBs), dopant bulk diffusion, dopant and Cu self-diffusion at the GB, and the effect of the presence of a dopant on Cu diffusion at the GB for advanced Cu alloy interconnects. Several dopants that inhibit Cu GB diffusion were identified. Two primary mechanisms were found, namely, dopant blocking and dopant dragging. Early experimental results have confirmed model predictions for one of the several dopants (carbon) identified so far. The mean time to failure has increased more than 60% with a carbon concentration in Cu as low as 0.01 at. % and the resulting resistivity increase can be controlled below 15% compared to undoped Cu.
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Surface diffusion
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Abstract It is often important to be able to estimate the concentration of dopant atoms incorporated into InP crystals grown from InP melt of given composition. In this paper we present a simple parameter (G) to revise the commonly used effective distribution coefficient ( k eff ) and the Scheil equation. The results obtained for various dopants and different initial concentrations in LEC‐grown InP ingots are discussed. It is shown that the revised dopant concentration curves tally with the real distributions.
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Potential difference
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The helical pitch as a function of the molar ratio of chiral dopants was discussed based on the host-host, host-dopant and dopant-dopant flexoelectric interactions in a ferroelectric liquid crystal mixture system. It was found that the wavenumber of the pitch approximately changes from quadratic to cubic dependence on the chiral dopant ratio and that the host-dopant flexoelectric interactions are negligible compared with the host-host and dopant-dopant interactions.
Flexoelectricity
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