Fabrication of NiS decorated hollow SnS nano-belts based photodiode for enhanced optoelectronic applications
N. AbhiramD. ThangarajuR. MarnaduSanthana VediJ. ChandrasekaranS. GunasekaranThamraa AlshahraniH. Elhosiny AliMohd. ShkirN.S.M.P. Latha Devi
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Photodiode
Photodetection
Photosensitivity
Photoconductivity
The design of photosensitivity measuring instrument was analyzed in the paper.The photosensitivity of solar cells prepared from blend systems of polythiophene(P3HT(poly(3-hexyl thiophene)) and C60 derivative PCBM(-phenyl C61-butyric acid methyl ester) was measured with self-made photosensitivity measuring instrument,and the reasons for the changes in the photosensitivity of solar cells were analyzed.
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Abstract The photosensitivity in cis ‐polyphenylacetylene ( cis ‐PPA, polymerized with rare‐earth catalysts) can be significantly enhanced by doping the PPA with I 2 or FeCl 3 and sensitizing with 4‐isothiocyanatofluorescein (F‐II) or 2,4,7‐trinitro‐9‐fluorenone (TNF), which are powerful sensitizers. The electrophotographic photoreceptor (P/R) device with cis ‐PPA + F‐II (on Al substrate) appeared preferable in photosensitivity enhancement and showed good photosensitivity: dark decay 1,8 V/s; maximum rate of discharge 321 V/s; residual surface potential 22 V; discharge 89, 1%; photosensitivity 2,96 s −1 . This is a new “family” of photosensitive materials which can be used in a duplicator.
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Abstract Photodetection using semiconductors is critical for capture, identification, and processing of optical information. Nowadays, broadband photodetection is limited by the underdeveloped mid‐IR photodetection at room temperature (RT), primarily as a result of the large dark currents unavoidably generated by the Fermi–Dirac distribution in narrow‐bandgap semiconductors, which constrains the development of some modern technologies and systems. Here, an electronic‐structure strategy is proposed for designing ultrabroadband covering mid‐ and even far‐IR photodetection materials operating at RT and a layered MoS 2 is manifested with an engineered bandgap of 0.13 eV and modulated electronic state density. The sample is designed by introducing defect energy levels into layered MoS 2 and its RT photodetection is demonstrated for wavelengths from 445 nm to 9.5 µm with an electronic state density‐dependent peak photoresponsivity of 21.8 mA W −1 in the mid‐IR region, the highest value among all known photodetectors. This material should be a promising candidate for modern optoelectronic devices and offers inspiration for the design of other optoelectronic materials.
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Balanced photodetection endows photoconductive detectors with high photoresponsivity and fast photoresponse speed. Here, we report a mixed-dimensional phototransistor consisting of CsPbBr3 colloidal quantum dots and few-layer MoS2 that is capable of balanced photodetection. In the heterojunction, the generation region and the transport channel of carriers are separated by the built-in electric field. Thus, the device exhibits a high photoresponsivity of 104 A W–1 and a fast photoresponse speed of 8 ms. All of these results demonstrate that the mixed-dimensional phototransistor is successful in balanced photodetection, and it has great application potential in communication and imaging.
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Measurements of the response time and photosensitivity of lead sulphide photoconductive cells have been made with a view to establishing a theoretical working model for photoconductors of this type The measurements include the variation in response time and photosensitivity with temperature, background illumination, applied electric field and other parameters. The results support, at least qualitatively, a theory of photoconductivity which postulates the existence of space-charge barriers at intercrystalline contacts The height of such barriers is reduced on illumination and conduction facilitated.
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The UV photosensitivity of GeO2-doped fibers and waveguides can be increased by loading with H2 at high pressure,1,2 but to date, H2-loaded P2O5-doped glass has not shown photosensitivity at 248 nm.1,3 Heating a glass causes a shift of the UV edge to longer wavelengths,4 increasing the photon-glass interactions. In this work we show that heating (200-450°C) increases the UV photosensitivity of H2-loaded GeO2-doped fibers and brings on 248-nm photosensitivity in H2-loaded P2O5-doped fibers.
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A relative photosensitivity factor S equal to 1430 is observed due to incorporation of Y in CdS. Dye-treatment enhances this value to 4516. A charge-transfer mechanism may be considered to be responsible for this process. Superliner photoconductivity and thermal quenching observed in the temperature range 133-366 K are explained in terms of a two-centre model.
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Atmospheric temperature range
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