Threshold voltage modulation of AlGaN/GaN MIS-FinFETs with sub-60 mV/decade subthreshold swing
Quan DaiRyun‐Hwi KimJ.‐H. LeeJeong-Gil KimTerirama ThingujamSeung‐Hyeon KangWoo-Hyun AhnEun-Jin KimJung‐Hee Lee
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In this work, threshold voltage modulation realized by adjusting fin width and dielectric layer were investigated through MIS-FinFETs. As fin width decreases from 120 to 30 nm, threshold voltage shifts toward positive direction and finally becomes positive value while maintaining SS smaller than 60 mV/dec. The phenomenon of achieving sub-60 mV/dec characteristics were illustrated by simulation and the concept of effective channel length. As for dielectric layer, by 20 nm-thick SiO 2 dielectric layer, device with fin width of 90 nm exhibits a threshold voltage of -0.5 V with SS as small as 50 mV/dec. Even when fin width is 30 nm, drain leakage is still not small enough when VG = 0, which indicates that the gate is not able to totally deplete the fin structure. In order to further increase threshold voltage and enhance the gate controllability, by 10 nm-thick Al 2 O 3 dielectric layer, a threshold voltage of 2 V is achieved when fin width is 40 nm with SS as small as 52 mV/dec due to the higher dielectric constant and thinner thickness of Al 2 O 3 compared with SiO 2 . Therefore, by the modulation of fin width, dielectric layer type, and dielectric thickness, threshold voltage can be carefully designed according to the application requirements while maintaining SS below 60 mV/dec.Keywords:
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A theoretical study was carried out to analyze the impact of composite effect on dielectric constant and tunability in the ferroelectric–dielectric system. Models of Ba 0.5 Sr 0.5 TiO 3 –Mg 2 TiO 4 , Ba 0.45 Sr 0.55 TiO 3 –MgO and Ba 0.5 Sr 0.5 TiO 3 –MgO–Mg 2 SiO 4 system were constructed. The corresponding dielectric constant, tunability, and electric field distribution were obtained from the finite element analysis and the connections between these parameters were analyzed. The effects of the relative relationship between the dielectric constant of ferroelectric and dielectric on the whole dielectric properties were also analyzed by constructing a series of models with different dielectrics.
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In modeling the dielectric properties of inhomogeneous materials, the treatment of the electric field interaction s differentiate the usual modeling formalism and their accuracy. In this paper, we show that the performance of effective medium methods is dependent upon a number of variables - defect concentration, alignment, and the dielectric constant of the material itself. Using our previously developed finite element model of an inhomogeneous dielectric, we have developed models for a number of dielectric films of varying dielectric constant and microstructures. Alignment to of defects parallel to the applied field and the larger defect aspect ratios increase the overall dielectric constant. The extent of these effects is dependent on the dielectric constant of the bulk component.
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The percolative ceramic composites of Ba0.75Sr0.25TiO3∕Ag (BST/Ag) with dense microstructure were sintered at a low temperature of 960°C. Excellent dielectric properties, such as high dielectric constant (εr∼24000), low dielectric loss, and high dielectric tunability, were reported. The dielectric constant is found to be nearly temperature and frequency independent. It is essential to introduce the low-melting-point metal of silver into BST ceramics for significantly enhancing the dielectric properties of the composites. The superproperties make it potential to be used for electronic devices such as high charge-storage capacitors and tunable filters.
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Composites have been extensively studied for dielectric and related applications. This is a review of polymer based 0–3 composites that exhibit a high dielectric constant. These composites are classified into two types: Dielectric–dielectric composite and conductor–dielectric composite. The physical principles and related models are presented with associated assumptions and approximations. In general, a dielectric–dielectric composite needs a higher concentration of the fillers to reach a high dielectric constant than a conductor–dielectric composite. The high dielectric constant observed in the conductor–dielectric composites is usually associated with a high dielectric loss and a low electric breakdown field. The experimental results are summarized to illustrate the principles for, and the achievements in, the development of these composites. The challenges facing the fundamental understanding and the further development of these composites for different applications are discussed.
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Based on Landau-Devonshire free energy theory,a thermodynamic model was built for dielectric/ PbZr0.4Ti0.6O3/dielectric sandwich structures.The relationship of critical fraction and dielectric er was investigated,then to gain charge storage capacity.The results show that high capacitance densities can be achieved when the total dielectric thickness reaches a critical fraction.The critical fraction increase with the increase of dielectric constant of dielectric layer,meanwhile,the less average dielectric response is,the larger the polarizability of dielectric layer induced by inner electric field is.As far as SiO2/ PbZr0.4Ti0.6O3/SiO2 be concerned,the critical fraction is about 0.37%,the average dielectric response is about –2.42×104.
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A new A site complex lead-free ferroelectric ceramics of(1-x-y)BNT-xBKT-yBiCoO3 was prepared by a conventional ceramic sintering technique.The relation between composition and dielectric properties,dielectric properties and frequency were investigated.It was found that the dielectric constant and dielectric loss of unpoled samples is higher that those of poled samples.The dielectric constant and dielectric loss of unpoled samples decrease with the increase content of BiCoO3.The dielectric constant and dielectric loss of unpoled and poled samples increase with the content of BKT increasing.The dielectric constant decreases with frequency increasing,and the decreasing trend become slowly.The dielectric loss first decrease and then increase with increasing frequency.
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The dielectric constant of most polymers is very low; the addition of TiO2 particles into the polymers provides an attractive and promising way to reach a high dielectric constant. Polymer-based materials with a high dielectric constant show great potential for energy storage applications. Four samples were prepared, one of them was polyurethane (PU) and the other were PU with different weight percent (wt %) of TiO2 (0.1, 0.2, 0.3) powder AFM test was used to distinguish the nanoparticles. The result shows that the most shape of these nanoparticles are spherical and the roughness average is 0.798 nm. The dielectric properties were measured for all samples before and after the exposure to the UV radiation. The result illustrates that the dielectric constant decreased and the dielectric loss increased, the amount of decrease in the dielectric constant decreases with the increasing of the TiO2 concentration that added to the PU and decreasing in the amount of dielectric loss.
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A novel method of estimating the dielectric constant has been devised based on a theoretical treatment of dielectrics. The expression obtained enables the electronic and ionic components of the dielectric constant to be estimated from data in the literature. The orientational component can be isolated by measuring the temperature dependence of the dielectric constant. The dielectric constants of low-k materials which have not been synthesized can be estimated using this expression.
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