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    Realization of high efficiency 4H-SiC IMPATT diode using optimized doping steps
    G. N. DashJ. PradhanSuryakanta SwainSatya Ranjan Pattanaik
    The electric field and width of the avalanche region are vital while determining the performance of an IMPATT diode. In an attempt to optimize the same a new doping pattern in the form of doping steps is introduced in the avalanche zone and its effects on the terahertz characteristics of a 4H-SiC IMPATT Diode are explored. It is exciting to observe a conversion efficiency of 17.24 % from the IMPAT T diode with the proposed doping steps.
    IMPATT diode
    Realization (probability)
    Avalanche diode
    Citations (1)
    An X-band silicon carbide IMPATT diode
    Luo YuanM. R. MellochJames A. CooperKevin J. Webb
    IMPact-ionization-Avalanche-Transit-Time (IMPATT) diodes are widely used as microwave sources in transmitters in pulsed radar systems. Under pulsed conditions, the peak output power of an IMPATT diode at a given frequency is limited by its underlying material properties. Due to the high breakdown field and high electron saturation velocity of silicon carbide (SiC), a SiC IMPATT diode is expected to produce microwave power at least 100 times higher than Si or GaAs IMPATT diodes. We reported the first demonstration of a SiC IMPATT diode last year. In this work, the microwave characteristics of the diode are presented.
    IMPATT diode
    Avalanche diode
    Step recovery diode
    Citations (1)
    Study on Electric Field Modulation and Avalanche Enhancement of SiC/GaN IMPATT Diode
    Electronics (2021)
    Yang DaiJiangtao DangQingsong YeZhaoyang LuShi Pu
    This paper proposes a 6H-materials silicon carbide (SiC)/gallium nitride (GaN) heterogeneous p-n structure to replace the GaN homogenous p-n junction to manufacture an impact-ionization-avalanche-transit-time (IMPATT) diode, and the performance of this 6H-SiC/GaN heterojunction single-drift-region (SDR) IMPATT diode is simulated at frequencies above 100 GHz. The performance parameters of the studied device were simulated and compared with the conventional GaN p-n IMPATT diode. The results show that the p-SiC/n-GaN IMPATT performance is significantly improved, and this is reflected in the enhanced characteristics in terms of operating frequency, rf power, and dc-rf conversion efficiency by the two mechanisms. One such characteristic that the new structure has an excessive avalanche injection of electrons in the p-type SiC region owing to the ionization characteristics of the SiC material, while another is a lower electric field distribution in the drift region, which can induce a higher electron velocity and larger current in the structure. The work provides a reference to obtain a deeper understanding of the mechanism and design of IMPATT devices based on wide-bandgap semiconductor materials.
    IMPATT diode
    Wide-bandgap semiconductor
    Impact ionization
    Citations (2)
    Q band GaAs Schottky-barrier IMPATT
    Electronics Letters (1971)
    Josh RodgersRobina C. Pomeroy
    Microwave power at Q band is reported from GaAs Schottky-barrier avalanche diodes. A nickel-contacted epitaxial GaAs structure in a flipped mesa configuration was used. In a Q band waveguide cavity, 0.5 W was obtained at 26.7 GHz using a pulsed voltage source.
    IMPATT diode
    Citations (3)
    Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode
    Electronics Letters (2001)
    Konstantin VassilevskiА. В. ЗоренкоK. Zekentes
    4H-SiC single drift p+-n-n+ IMPATT diodes have been fabricated and characterised. The diodes have avalanche breakdown voltages of ~290 V. Microwave oscillations appeared in X-band at a threshold current of 0.3 A. The maximum output power of 300 mW was measured at an input pulsed current of 0.35 A.
    IMPATT diode
    Avalanche diode
    Citations (22)
    High-power 11 GHz GaAs hi-lo Impatt diodes with titanium Schottky barriers
    Electronics Letters (1979)
    J.R. GriersonKen B. CooperPhilip LeighP.J. O’SullivanP.W. Huish
    Schottky-barrier hi-lo GaAs Impatt diodes with Ti-Pt-Au contacts have been fabricated for the 10.7–11.7 GHz band. At 180°C junction temperature rise the diodes have produced over 5 W of output power and up to 24% efficiency from an 11 GHz oscillator. Initial life tests show potential for high reliability.
    IMPATT diode
    Citations (3)
    IMPATT oscillation in SiC p+-n−-n+ diodes with a guard ring formed by vanadium ion implantation
    Electronics Letters (2004)
    M. AraiSatoshi OnoChikao Kimura
    SiC impact avalanche and transit time (IMPATT) diodes with a guard ring formed by vanadium ion implantation showed a peak output power of 1.8 W at 11.93 GHz. The guard ring reduced the electric field near the diode's periphery and reduced the device temperature.
    Oscillation (cell signaling)
    IMPATT diode
    Citations (12)
    Prospects of wide band gap material ZB-GaN over low band gap GaAs-based IMPATT Devices
    International Conference on Computers and Devices for Communication (2009)
    TripathyPandaPati
    Wide-bandgap semiconductor
    Citations (0)
    Comparative analysis of the millimeter wave performance of diamond based IMPATT diode with that of SiC (4H) IMPATT diode
    Indian Journal of Pure & Applied Physics (2015)
    Dipankar GhoshChakrabarti BibekMonojit Mitra
    IMPATT diode
    Extremely high frequency
    Citations (1)
    C.W. anomalous-mode operation in silicon planar IMPATT diodes
    Electronics Letters (1969)
    R.H. De BoiseP.W. Shackle
    Silicon planar IMPATT diodes which operate in the Read mode in the frequency range 4.5–11.5 GHz have been observed to produce c.w. oscillations in the frequency range 0.5–2.0 GHz. These u.h.f. oscillations commence at a current density of 250 A/cm2 and are accompanied by a 15–20% decrease in the diode direct voltage. The d.c./r.f. power-conversion efficiency in the anomalous mode is approximately twice that in the Read mode.
    IMPATT diode
    Mode (computer interface)
    Citations (0)