Texture of YBCO layer grown on GaN/c-sapphire substrates
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Texture (cosmology)
Pole figure
Aluminum nitride (AlN) thin film/molybdenum (Mo) electrode structures are typically required in microelectromechanical system applications. However, the growth of highly crystalline and c-axis-oriented AlN thin films on Mo electrodes remains challenging. In this study, we demonstrate the epitaxial growth of AlN thin films on Mo electrode/sapphire (0001) substrates and examine the structural characteristics of Mo thin films to determine the reason contributing to the epitaxial growth of AlN thin films on Mo thin films formed on sapphire. Two differently oriented crystals are obtained from Mo thin films grown on sapphire substrates: (110)- and (111)-oriented crystals. The dominant (111)-oriented crystals are single-domain, and the recessive (110)-oriented crystals comprise three in-plane domains rotated by 120° with respect to each other. The highly ordered Mo thin films formed on sapphire substrates serve as templates for the epitaxial growth by transferring the crystallographic information of the sapphire substrates to the AlN thin films. Consequently, the out-of-plane and in-plane orientation relationships among the AlN thin films, Mo thin films, and sapphire substrates are successfully defined.
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The epitaxial layers of CdSe were grown on ZnTe at 560°C by liquid phase epitaxy (LPE) from a Te solution in an open tube apparatus. The morphology of the grown layer was greatly influenced by the smoothness of the substrate surface. The effects of the meltback solution and the chemical etchant on the morphology of the grown layer were investigated. The layer grown with the Cd+Zn alloy as a meltback solution had a smooth and flat surface without hollows between the grown layer and the substrate, although there were some hollows near the interface with Te meltback or without meltback. Chemical etching of the substrate also affected the morphology of the grown layer. Etching with a mixture solution of K 2 Cr 2 O 7 and HNO 3 caused the surface of the ZnTe substrate to become mirrorlike and resulted in the growth of CdSe layers with smoother surfaces.
Morphology
Isotropic etching
Liquid phase
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Ultraviolet
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ZnTe crystals were grown on sapphire substrates by metalorganic vapor phase epitaxy using dimethylzinc and diethyltelluride as the source materials. It was found that epitaxial ZnTe layers can be obtained on sapphire substrates. High bandwidth up to 40 THz emission signal was clearly observed from the ZnTe epitaxial layers.
Dimethylzinc
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A single-phase γ-LiAlO2 layer with a highly-preferred (100) orientation on sapphire substrate is successfully fabricated by vapor transport equilibration (VTE) technique in Li-rich ambient. The VTE treatment temperature is essential to obtaining the high-quality layer of γ-LiAlO2, and the optimized temperature is about 1050 °C in the present work. It is promising to fabricate the γ-LIAlO2(100)//sapphire composite substrate for GaN-based epitaxial film. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Vapor phase
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Sapphire is known as the most commonly used substrate, and it is widely used as the substrate for the growth of GaN films. In this paper, Sapphire substrate is pretreated by melted KOH solution, in which the triangle patterned etched pits are formed, and the interpretation is theoretically given about the triangle shape. In additional, compared the results which are obtained when the etched temperature and time varied. The dislocation is displayed very clearly and accurately, and adapted to the followed lateral epitaxial overgrowth, when the sapphire substrate is pretreated at 280° C for about 60 minutes. The crystal quality is analyzed by high-resolution double crystal X-ray diffraction (DCXRD). The result indicated that the pretreatment of sapphire substrate has less effect on the crystal quality. So the patterned sapphire can serve as lateral epitaxial substrate to decrease the dislocation density of GaN films. High quality GaN films with low dislocation density have been grown by LP MOCVD on the sapphire substrate which is pretreated by a new and simple method in order to overcome those problems existing in the conventional ELO technique.
Crystal (programming language)
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Pulsed laser deposition has been used to deposit Y1Ba2Cu3O7 layer on CeO2 buffer layers on (11_02) sapphire. Both layers are epitaxial with the 〈110〉 direction of the CeO2 layer aligned with the 〈2_021〉 direction of the sapphire substrate. The c-axis Y1Ba2Cu3O7 layer has its 〈100〉 direction alligned with the 〈110〉 direction of the CeO2. Cross-sectional transmission electron microscopy shows the epitaxy to be coherent and the interfaces to be abrupt at an atomic level. The best films have a critical current of 9 × 106 A/cm2 at 4.2 K and lower microwave surface resistance than copper at 77 K and at a frequency of 31 GHz.
Pulsed Laser Deposition
Buffer (optical fiber)
Deposition
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InGaN single-quantum-well-structure blue light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The emission spectra showed the similar blue shift with increasing forward currents for both LEDs. The output power of both LEDs was almost the same, as high as 6 mW at a current of 20 mA. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. These results indicate that the In composition fluctuation is not caused by dislocations, the dislocations do not act as nonradiative recombination centers in the InGaN, and the dislocations forms the leakage current pathway in InGaN.
Leakage (economics)
Blueshift
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