Plasmon enhanced perovskite-metallic photodetectors
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Perovskite based photodetectors and hybrid devices possess distinctive properties which have enabled considerable practical applications since perovskite is an ideal candidate for higher sensitivity and response speed. In this work, an elegant approach of fabricating hybrid photodetectors based on perovskite-metallic nanostructures is shown. By combining gold triangle nanoantennae with a CH3NH2PbI3 film, a simple yet effective fabrication method of hybrid organic-inorganic perovskite photodetectors with improved performanceis experimentally demonstrated. Finite difference time domain calculations agree well with experimental results. Perovskite-assisted devices are highly attractive due to their unique properties and the results shown in this work may find extensive potential applications for novel flexible photodetectors and other related optical devices.Black Phosphorus
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Photodetectors are among the most widely used optoelectronic devices in numerous commercial and scientific applications. Today, commercially available photodetectors are typically made from gallium phosphide (GaP), silicon (Si) and indium gallium arsenide (InGaAs) for detection in ultraviolet (UV), visible and near-infrared (IR) regimes of the electromagnetic spectrum, respectively. For mid and far infrared lead sulphide (PbS), lead selenide (PbSe), indium antimonide (InSb), and mercury cadmium telluride (HgCdTe) based photodetectors are used. It is therefore highly desirable to have a single, low cost, multi-spectral range photodetector that covers the optical window created by present technologies and does not require cryogenic temperature for efficient operation. In addition, the current photoconductor technologies have high dark currents, poor detectivity, slow response speed, and are not compatible with flexible platforms. The research work in this thesis is aimed to address the major issues related to current photodetector technologies and to develop low cost multispectral photodetector technology. For this, a study on PbS semiconductor nanocrystals and C60 single crystal fullerites is undertaken to develop hybrid photodetector technology. Both these materials have very attractive properties well suited for photodetector device applications such as broadband size-tunable absorption of PbS nanocrystals and high electron mobility of C60 fullerites. A variety of large area (25 mm2) photoconductor devices are demonstrated employing these materials. Photoconductor devices fabricated display a broadband UV-vis-NIR spectral tunability, exhibit a detectivity ~1010 Jones, a responsivity ~0.35 A/W, a linear dynamic range of 80 dB, a rise time 60 μs and signal detection capability up to ~250 kHz. These figures of merit achieved for the photoconductor devices are competitive with the current state of the art technologies. With the additional processing benefits including simple room temperature device fabrication and providing compatibility with large-area flexible platforms, these devices represent significant advances and make PbS nanocrystals and C60 fullerites promising candidates for advanced photodetector technologies. The thesis also includes preliminary studies on photoconductor devices based on single ZnO nanorods.
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Attention to the microwave design of waveguide photodetectors leads to travelling-wave photodetectors. These devices show bandwidths as high as 172 GHz, the highest reported for a p-i-n photodetector, and bandwidth efficiency products as large as 76 GHz, the largest reported for any photodetector without gain. Direct comparisons with vertically illuminated and waveguide photodetectors confirm the advantages of travelling-wave photodetectors.< >
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An ultrasensitive solution-processed “conventional” perovskite photodetector is fabricated to circumvent fabrication and stability issues in the “inverted” perovskite photodetectors.
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Three kinds of CMOS compatible photosensors, P+/Nwell photodetector, Nwell/Psub photodetector and N+/Psub photodetector, were designed by using SMIC 0.18μm standard CMOS technology. Some critical parameters, such as responsivity, dark current and maximal response wavelength were analyzed based on the mathematic model established. The influences of some technology parameters, such as doping concentration, junction depth, were pointed out as well. The experiment results indicate that P+/Nwell photodetector can reach a maximal sensitivity of 0.08 A/W at 460nm with 55nA/cm2 dark current, Nwell/Psub photodetector has a maximal sensitivity of 0.35A/W at 580nm with 64nA/cm2 dark current and N+/Psub photodetector attains a maximal sensitivity of 0.29 A/W at 580nm with 600nA/cm2 dark current. The test results show that the photodetectors designed agree with theoretical analysis basically and have prominent performance on sensitivity and response wavelength.
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Two-dimensional (2D) materials have attract increasing interest in the past few years because of their good photoelectric, thermal and mechanical properties. In this paper, the photodetector of the two-dimensional material is taken as the main research object, at the same time, four kinds of photodetectors based on two-dimensional materials and their research status are introduced in detail. The methods of increasing the light absorption rate and improving the preparation of twodimensional material are put forward to improve the performance of photodetector. We fabricated a photodetector demo by MoS2, and it shows a relatively high photoresponsivity and fast response time. Finally, the development prospect of two-dimensional material photodetector is prospected.
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Abstract Hybrid organic–inorganic perovskite materials garner enormous attention for a wide range of optoelectronic devices. Due to their attractive optical and electrical properties including high optical absorption coefficient, high carrier mobility, and long carrier diffusion length, perovskites have opened up a great opportunity for high performance photodetectors. This review aims to give a comprehensive summary of the significant results on perovskite‐based photodetectors, focusing on the relationship among the perovskite structures, device configurations, and photodetecting performances. An introduction of recent progress in various perovskite structure‐based photodetectors is provided. The emphasis is placed on the correlation between the perovskite structure and the device performance. Next, recent developments of bandgap‐tunable perovskite and hybrid photodetectors built from perovskite heterostructures are highlighted. Then, effective approaches to enhance the stability of perovskite photodetector are presented, followed by the introduction of flexible and self‐powered perovskite photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. A comprehensive summary of the research status on perovskite photodetectors is hoped to push forward the development of this field.
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We present deep UV light-emitting diodes and photodetectors based on high Al-composition AlGaN. We have obtained very short wavelength UV LEDs (<255 nm) with milliwatt level optical output powers, based on an AlGaN multiple-quantum well active region. Solar-blind photodetectors have also been fabricated with quantum efficiencies in excess of 70%. Based on these photodetectors, focal plane arrays have been fabricated.
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