Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes
Kijeong HanAditi AgarwalAjit KanaleB. Jayant BaligaSubhashish BhattacharyaTzu-Hsuan ChengDouglas C. HopkinsVoshadhi AmarasingheJohn Ransom
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In this paper, we report successful fabrication of the first large area, monolithic, 1.2 kV 4H-SiC Bi-Directional FETs (BiDFETs) with integrated JBS diodes in a 6-inch commercial foundry for use in matrix converters. The fabricated BiDFETs support high voltage (>1.2 kV) in the first and third quadrants. They exhibit very low on-resistance of 50 mΩ in the on-state in both quadrants when the 20 V gate bias is applied to both gates, allowing conduction of 20 A with 1 V drop. Fully gate voltage controlled output characteristics are also confirmed in both quadrants.The authors fabricated an organic nanochannel field-effect transistor (FET) that is self-wired with highly conductive organic conductors. The advantages of the transistor are a short channel (approximately 400nm in length) and spontaneous formation of an active layer of the FET. Further, in principle, the carrier-injection barrier is absent at the interface of the organic metal and organic semiconductor. Thus, the transistor is highly conductive despite the narrow cross section of the channel. The FET characteristics of the nanochannel transistor exhibit the n-channel enhancement mode behavior.
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