Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors (Special Issue: Active-Matrix Liquid-Crystal Displays--TFT Technologies and Related Materials)
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Oxide thin-film transistor
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Abstract This article reviews several classes of inorganic semiconductor materials that can be used to form high‐performance thin‐film transistors (TFTs) for large area, flexible electronics. Examples ranging from thin films of various forms of silicon to nanoparticles and nanowires of compound semiconductors are presented, with an emphasis on methods of depositing and integrating thin films of these materials into devices. Performance characteristics, including both electrical and mechanical behavior, for isolated transistors as well as circuits with various levels of complexity are reviewed. Collectively, the results suggest that flexible or printable inorganic materials may be attractive for a range of applications not only in flexible but also in large‐area electronics, from existing devices such as flat‐panel displays to more challenging (in terms of both cost and performance requirements) systems such as large area radiofrequency communication devices, structural health monitors, and conformal X‐ray imagers.
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Amorphous oxide semiconductors have drawn considerable attention as a replacement for ubiquitous silicon based technologies. By virtue of their flexible substrate compatibility and transparency, amorphous metal oxide semiconductor (AOS) thin film transistors (TFTs) are being explored in emerging flexible/ transparent technologies. However, rapid advances in such technologies require the development of high-performance thin film transistors, which can be fabricated at low processing temperatures. In this review paper, we discuss the recent progress made in n-type semiconductor TFTs activated at low temperatures both on rigid and flexible substrates with a focus on the replacement of conventional high temperature annealing. Several low temperature processing approaches that have been reported in both vacuum deposited and solution processed n-type metal oxide semiconductor based thin film transistors are evaluated, with an emphasis on some novel techniques which can effectively modulate the electronic properties of the n-type metal oxide semiconductor systems at low temperatures. The final part of this review draws conclusions and discusses the outlook for future research efforts in achieving low temperature activated high performance n-type TFTs.
Oxide thin-film transistor
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Summary form only given. The evolution in materials and process fabrication technologies is posing new challenges and application areas in large area electronics. A driving force in this evolution is silicon thin film technology. Interest in thin film silicon extends well beyond the active matrix liquid crystal display and stems from a variety of desired technological features including low temperature manufacturing with few constraints on the substrate size, material, or topology. More recently, the extension of the technology to plastic substrates has received considerable attention. Interests on plastic is being driven by the need for lightweight, unbreakable, and eventually foldable screens for displays and imagers, along with a plethora of new generation applications ranging from media to bio-medicine. Although thin film silicon, by virtue of material structure, does not enjoy the same electronic properties, such as speed and current drive capability compared to crystalline Si, it is currently being challenged with new material and device structures that can meet performance requirements, particularly that of active matrix backplanes for a new generation of displays and imagers. This talk will review precisely these challenges, and address deviceand materials-related issues from the standpoint of scaling channel lengths and compacting transistor area through use of vertical transistor structures, and nano-structuring thin film silicon for high mobility, stability, and drive current, and more importantly, CMOS realization for eventual system-on-panel integration at sub-150°C for plastic compatibility.
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Amorphous oxide semiconductors have been studied primarily as the active semiconducting material for thin film transistors for active matrix display and transparent/flexible electronic applications. Recent results on printed amorphous oxide semiconductors for thin film transistors, the role of surface functionalization, and the integration of these materials for resistive random access memory applications will be described.
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