Effect of RF and MW plasma hydrogenation on polysilicon based solar cells
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Recently, some works have focused attention on the reactivity of the silicon atom with closed-shell molecules. With CO, silicon may form a few relatively stable compounds, i.e., Si(CO), Si(CO)(2), and Si[C(2)O(2)], while the existence of polycarbonyl (n > 2) silicon complexes has been rejected by current literature. In this paper, the reaction of silicon with carbonyl has been reinvestigated by density functional calculations. It has been found that the tetracoordinated planar Si(CO)(4) complex is thermodynamically stable. In Si(CO), silicon carbonyl, and Si(CO)(2), silicon dicarbonyl, the CO moieties are datively bonded to Si, and Si[C(2)O(2)], c-silicodiketone, is similar to the compounds formed by silicon and ethylene; Si(CO)(4), silicon tetracarbonyl, may be viewed as a resonance between the extreme configurations (CO)(2)Si + 2CO and 2CO + Si(CO)(2). A detailed orbital analysis has shown that the Si bonding with four CO is consistent with the use of sp(2)d-hybridized orbitals on silicon, giving rise to a planar structure about Si.
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LOCOS
Nanocrystalline silicon
Hybrid silicon laser
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Abstract The article contains sections titled: 1. Introduction 2. Silicon Hydrides 2.1. Monosilane 2.2. Disilane 2.3. Purification 2.4. Uses 2.5. Safety Measures 2.6. Photochemistry 3. Silicon Halides 3.1. Trichlorosilane 3.1.1. Preparation from Elemental Silicon 3.1.2. Preparation from Tetrachlorosilane 3.1.3. Purification 3.1.4. Waste Disposal 3.1.5. Uses 3.2. Tetrachlorosilane 3.2.1. Production 3.2.2. Purification 3.2.3. Uses 3.3. Hexachlorodisilane 3.3.1. Production 3.3.2. Uses 3.4. Other Silicon Chlorides 3.5. Silicon Fluorides 3.6. Silicon Bromides 3.7. Silicon Iodides 4. Silicon Oxides 4.1. Silicon Monoxide 4.1.1. Production 4.1.2. Properties 4.1.3. Uses 4.2. Silicon Sesquioxides 4.3. Other Silicon ‐ Oxygen Compounds 5. Silicon Sulfides 6. Silicon Nitrogen Compounds 7. Silicon Borides
Trichlorosilane
Silicon monoxide
Disilane
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High compensated silicon and over compensated silicon were acquired by diffiusing Mn-metal into p-type
silicon of low resistivity at high temperature. The acquired samples of resistivity of 3.2×10~3Ω·cm, 4.8×10~4Ω·cm, 1.3×10~5Ω·cm,
3.2×10~5Ω·cm are measured. Their B-values are 5103, 5600, 6103, 6502 K, respectively. The compensated silicon is very
sensitive to ambient temperature.
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Molecular silicon clusters with unsubstituted silicon vertices (siliconoids) have received attention as unsaturated silicon clusters and potential intermediates in the gas-phase deposition of elemental silicon. Investigation of behaviors of the siliconoids could contribute to the greater understanding of the transformation of silicon clusters as found in the chemical vapor deposition of elemental silicon. Herein we reported drastic transformation of a Si8R8 siliconoid to three novel silicon clusters under mild thermal conditions. Molecular structures of the obtained new clusters were determined by XRD analyses. Two clusters are siliconoids that have unsaturated silicon vertices adopting unusual geometries, and another one is a bis(disilene) which has two silicon–silicon double bonds interacted to each other through the central polyhedral silicon skeleton. The observed drastic transformation of silicon frameworks suggests that unsaturated molecular silicon clusters have a great potential to provide various molecular silicon clusters bearing unprecedented structures and properties.
Nanocrystalline silicon
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Changes of the dissolved oxygen content after deoxidation with 0.1 % and 0.42 % silicon have been determined by fixing the oxygen as the radioactive SiO2 with the radioactive silicon (silicon-31) previously charged in the sampler and counting radioactivity of the inclusions extracted from the sample.In both cases, the dissolved oxygen content decreases rapidly below the equilibrium value, and then increases gradually to reach it.The mechanism of the silicon deoxidation has been discussed from the viewpoint that such changes of the dissolved oxygen is due to the non-uniform distribution of silicon formed in liquid iron immediately after silicon addition.The conclusions are as follows:(1) In the regions where the silicon contents are high, SiOx (x<2) is produced, owing to the fast rate of reaction between silicon and oxygen, and the oxygen contents decrease to lower value than the equilibrium one.(2) The minimum of the dissolved oxygen attained immediately after silicon addition is regarded as a mean oxygen content at the time when silicon and oxygen dissolved uniformly in the melt.(3) The oxygen content increases again by the reaction SiO2 (crucible) = Si+2 O and the deoxidation processes such as growth of the deoxidation products and adhesion of them to the crucible wall are rate controlled by this reaction.(4) The composition of SiOx is not widely different from that of SiO2.
Crucible (geodemography)
Limiting oxygen concentration
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The nationally-recognized Susquehanna
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Relationship of a-Silicon and TFT characteristic has been studied in SF6-Cl2 plasma at 200mtorr, the remained thickness of channel a-Silicon has been measured at different etch time, and the TFT characteristic have been measured by EPM System. Point out here, the a -Silicon of channel department from three layers of material L: a-Silicon, H: a-Silicon, and the n+ a-Silicon according to 21.74%, 56.52%, 21.74% comparison deposition. But among them, the n+ a-Silicon is the part that the channel department has to clean, rest two part is the factor which influences TFT characteristic. So need to consider the case in the whole experiment process: the percent of H: a-Silicon in all the a-Silicon, namely so-called H: a-Silicon%. Because it is not only promising the n+ a-Silicon have to be all cleaned, but also prevent the L: a-Silicon below from attacking, so time in experiment's selection has to start from a certain fixed-point. Testing the result elucidation that remained thickness of H: a-Silicon is 10.8% while the TFT characteristic becomes to differ obviously. So draw a conclusion that the TFT characteristic hardly has relationship with remained thickness of H: a-Silicon whose in the range of 25%～45% of a-Silicon, and has been greatly affected while remained thickness of H: a-Silicon lower than 25% of a-Silicon.
Nanocrystalline silicon
Oxide thin-film transistor
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Silicon-molybdenum yellow and silicon-molybdenum blue were applied for the determination of silicon content in ASP flooding produced water.The results showed that the precision of silicon-molybdenum blue was higher than that of the silicon molybdenum yellow when the silicon content of water was low.It was opposite when the silicon content of water was higher.Therefore,it was suggested that according silicon content of the sample,the appropriate test method can be selected.
Molybdenum blue
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