High quantum yield pure blue emission and fast proton conduction from an indium–metal–organic framework
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A 3D anionic In3+–MOF integrates the multifunctionality of pure blue luminescence with a high quantum yield of 61.4% and water-mediated fast proton conduction with Keywords:
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The electrochemical behavior and electrodeposition of indium was investigated at 26 °C and 160 °C from a solution composed of indium(iii) methanesulfonate and dimethylsulfoxide (DMSO). Indium(iii) methanesulfonate was synthesized from indium(iii) oxide and methanesulfonic acid (MSA). Cyclic voltammetry, quartz crystal microbalance measurements and rotating ring disk electrode experiments indicated that reduction of indium(iii) to both indium(i) and indium(0) occurs. Yet, reduction to metallic indium was found to be the predominant process. Deposited indium could be stripped to indium(i). This unstable species disproportionated to indium(iii) and indium(0), leading to the formation of micron-sized metallic indium particles in the electrolyte. At 26 °C, indium deposited on glassy carbon as smooth, flat films whereas at 160 °C, it deposits as droplets.
Indium tin oxide
Quartz Crystal Microbalance
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By using the zinc concentrate leaching solution with indium contained as raw material,the precess of riching indium was studied by method of reducing Fe3+ by using the zinc concentrate and neutralizing-prcipitation indium.The results showed that the reducing rate of Fe3+ was 96% for 120 minutes of reduceing time at 95℃ with adding quantity of the zinc concentrate 3 times as the theorrtical need;consistency of indium in liquid after precipitating indium was only 0.004 g/L,the content of indium in precipitate was around 1%,the quality rate of indium to iron in precipitate is about 8.3.
Oxygen pressure
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Indium based III-V compounds are very important technological materials. However, the indium incorporation depends on several phenomena, among them, the influence of indium segregation has been the most studied. In this paper, we show that to predict accurately the energy levels of In based III-V quantum structures, besides the indium segregation, the indium desorption must also be considered. In order to verify this assumption, we consider InGaAs/GaAs quantum wells as a benchmark case, and simulate 48 different quantum wells comparing with photoluminescence results.
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Comprehensive-factor experiment of recovery of indium from the high impurity indium-containing material was carried out,and the process was used to produce.Application and production results showed that indium leaching rate was more than 99 percent using the process of this material,the fianl grade of crude indium was above 99 percent,and the entire process of the indium recovery rate was more than 86 percent.Not only the extraction process of the emulsion and aging of impurity to organic phase were solved,but also it improved the capacity of indium and the quality product.The process that used to deal with the indium-containing material has enormous economic benefits and a very good prospect.
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Indium is one of dispersed elements. On the basic of analyzes of the consumption and production structure on indium, the reasons of the indium price variation are discussed. The indium market is divided into three sections, and according to the application features of indium, it is predicted that the commercial need for indium is still great, the price has the possibility to rise back. Taking Dachang tin-polymetallic deposit as an example, the characteristics of indium associated deposits and indium resources in China are analyzed, and the dispersed elements researching status is discussed, and the suggestions how to transform the resource advantage to the economic superiority are gave.
Indium tin oxide
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Indium(iii ) is electrodeposited from organic electrolytes, in which indium(i ) occurs as an intermediate species, and disproportionates to indium(iii ) and indium(0) in the form of nanoparticles.
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Mole fraction
Vapor phase
Indium gallium nitride
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This specification covers requirements for refined indium as ingot in six grades, namely: Grade 99.9 or 3N grade (indium with a purity of 99.90%); Grade 99.99 or 4N grade (indium with a purity of 99.99%); Grade 99.995 or 4N5 grade (indium with a purity of 99.995%); Grade 99.999 or 5N grade (indium with a purity of 99.999%); Grade 99.9999 or 6N grade (indium with a purity of 99.9999%); and Grade 99.99995 or 6N5 grade (indium with a purity of 99.99995%). Indium metal from ingot can be fabricated into shot, spheres, wire, sheet, foil, tubing, and other customized fabrications with purities up to and including Grade 99.999. Grades 99.9999 and 99.99995 are available in ingot form only.
Ingot
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A description is made of the present situation and existing proble ms of indium enrichment of Zhuzhou Smelter. A further discussion is made of how to improve the technology to increase indium residue's grade and indium recovery . Compared with the original technology, it is shown that the new indium enrichm ent technology can improve greatly the grade of indium residue and the indium re covery, that is to say, the former increases from 2.23% in 1995 to 4.11% in 2001 and the latter from 41.64% in 1995 to 62.49% in 2001. New suggestions are made for the high acid indium-leaching technology.
Residue (chemistry)
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According to the principle that the property of indium and zinc is similar,the indium is enriched from zinc leached residue by vaporization process in kiln,the recovery rate of indium and zinc is greater than 80% and 90% respectively.
Vaporization
Residue (chemistry)
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