A New High-speed Drive Topology of Wide-bandgap Power MOSFET Based on Dynamic Procedure Model
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Abstract More and more attention is being drawn on the wide-bandgap power MOSFET, for its performance is far superior to the traditional silicon MOSFET. Driving technology is one of the key factors that influence the performance of device. In this paper, a high-speed drive circuit topology is proposed. The principle of the improved drive circuit is simple and easy to be implemented. Compared with the traditional design, it can reduce the switching time while maintaining the original driving performance.Keywords:
Power MOSFET
Switching time
Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.
Power MOSFET
Voltage drop
Short-channel effect
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SiC MOSFET is the latest high-voltage power device and are characterized by low on-resistance and extremely fast switching speed. The effects of the power MOSFET on power losses of switching power supply were analyzed, the comparison test of SiC MOSFET and silicon MOSFET with same parameter of 1 200 V/24 A was made. The experimental results show that the switching speed of SiC MOSFET is significantly faster than that of silicon MOSFET under the same condition of driver and load,,meanwhile, the power losses are significantly lowerd, the efficiency of switching power supply could be substantially improved and even simply replace SiC MOSFET with silicon MOSFET.
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Switching time
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This paper outlines the recent power devices developments in the maturation of a SiC power MOSFET technology, focusing attention on device structure and performance trade-offs. Improvements will be made on the gate width, gate oxide thickness, doping concentration of the polysilicon gate and overlap spacing of existing silicon carbide MOSFET designs. The success of this design will impact power applications in the areas related to high temperature and high voltage. In the on state, the specific on-resistance is 130 m/spl Omega//cm/sup 2/. The specific on-resistance of 6H-SiC MOSFET is lower than any others due to the field effect mobility of 35 cm/sup 2//Vs.
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A new type of power MOSFET called super junction MOSFET has been introduced. This new power MOSFET presents an interesting behavior in terms of a R/sub DS(on)/ reduction for the same silicon area allowing fabrication of high voltage devices. Additionally, a reduction in the parasitic capacitances, improving the commutation characteristics, have been observed. Thus, this new power MOSFET could replace the traditional device in different power converter applications like power supplies (SMPS) or power factor correction applications. The objective of this paper is to explore the switching characteristics and to present a comparison of this new device SJ-MOSFET with the conventional power MOSFET under different operating conditions using special test circuits.
Power MOSFET
Commutation
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Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.
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This paper describes a method to identify and assess power loss mechanisms in power MOSFETs for switched circuits. An accurate behavioural MOSFET model is employed in a circuit simulator to analyse the performance of a trench MOSFET technology. A synchronous buck converter for point of load applications underlies the study of MOSFETs' switching behaviour. The methodology aims at the derivation of roadmap targets for future technology developments.
Power MOSFET
Buck converter
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Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.
Power MOSFET
Voltage drop
Short-channel effect
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Characteristics of fast recovery diode (FRED) type super junction MOSFET (SJ-MOS) are reported. The reverse recovery ruggedness (-di/dt ruggedness) of the SJ-MOS FRED is dramatically improved compared to that of non-FRED type, which is almost 16 times better.
Power MOSFET
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This paper describes a method to identify and assess power loss mechanisms in power MOSFETs for switched circuits. An accurate behavioural MOSFET model is employed in a circuit simulator to analyse the performance of a trench MOSFET technology. A synchronous buck converter for point of load (PoL) applications underlies the study of MOSFETs' switching behaviour. The methodology aims at the derivation of roadmap targets for future technology developments
Power MOSFET
Buck converter
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Citations (9)