Threshold fluences for conditioning, fatigue and damage effects of DKDP crystals
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Using 55 MeV/u40Ar and 80 MeV/u20Ne ion beams delivered by the Heavy Ion Research Facility at Lanzhou (HIRFL), the relationships between the irradiation homogeneities in irradiation fields generated by the beam scanning device located at the irradiation terminal of the HIRFL and ion fluence were measured respectively with 100 μm polycarbonate films by means of nuclear track detection. The results show that the homogeneity increases when the ion fluence are lower than 1×106 and 2×107 ions/cm2, and the homogeneity has a gradual increase at the fluence of 1×106-1×107 and 2×107-1×108 ions/cm2 and then reached about 58% and 61% when the fluence are higher than 1×107 and 1×108 ions/cm2, respectively, for the40Ar and20Ne ion beams. It is evident that the homogeneity in the irradiation field made by the beam scanning device presently cannot satisfy the requirements of researches such as heavyion induced biological effects, etc. Therefore, the performance of the scanning device should be improved further.
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Single crystal tungsten samples with orientation (110) were irradiated in the Materials Irradiation Experiment with normal incidence 30 keV He+ at 900 aC. Samples were mechanically polished and then electropolished with a KOH solution before irradiation to 3×1017 to 6×1018 He+/cm2. With increasing fluence sample surface pore size increased from ~20 nm to more than 100 nm. Mass loss also increased with fluence to a maximum of 15 g/m2 lost for the highest fluence sample.
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The influence of errors on the irradiation process for laser-induced periodic surface structures (LIPSS) was studied theoretically with energy density simulations. Therefore an irradiation model has been extended by a selection of technical variations. The influence of errors has been found in a deviation from optimal conditions, by a shift or spread of accumulated fluence and a variation of local fluence, related to variations of the peak fluence and relative pulse intersection. The analysis of the irradiation process by energy density simulations, gives the possibility to perform realistic irradiation simulations and derive optimization strategies for the determination of irradiation parameters. This analysis is required for the application of LIPSS for surface functionalization.
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The effect of irradiation with 132Xe27+ ions (167 MeV) at angles of 20°, 30°, 60°, and 90° to the tape surface on the critical parameters of second-generation superconducting tapes based on the SuperOx GdBa2Cu3O7–x compound has been studied. The dependences of the critical current (Ic) at T = 77 K in the intrinsic magnetic field and the critical temperature (Tc) on the ion irradiation fluences at different irradiation angles are obtained. At all studied irradiation angles, a small (up to ~ 5 %) increase in the critical current of HTSC tapes is observed in the fluence range from 3.4·108 to 5·109 ion/cm2. The radiation resistance of a superconductor to ion irradiation is determined as a function of the irradiation angle. To determine the radiation resistance of the tape, the threshold irradiation fluence Φth was measured, at which the critical current tends to zero. The dependence of Φth on the irradiation angle α is well approximated by the formula: Φth = Φ0 + A·exp(–α/t).
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For simulating space environmental radiation a 2×1.7 MV tandem accelerator was used. GaAs/Ge solar cells were irradiated using 2 MeV C ions with the fluence from 3.1×109 to 6.9×1012 cm-2. Both I-V characteristics and spectral response were measured before and after irradiation. The results show that the Isc,Voc and Pmax of GaAs/Ge solar cells decrease as the irradiation fluence increases,and among them,Pmax decreases the most while Voc the least. This degradation rule is similar to that induced by proton irradiation. But to make Pmax of GaAs/Ge solar cells decrease to 50%,the required irradiation fluence of C ion is less than that of proton with the same range by two orders of magnitude. The spectral response of GaAs/Ge solar cells decreases more significantly in the long wavelength region than in the short wavelength region after C ion irradiation at a low fluence of 3.1×109 cm-2. When the fluence increases to more than 3.1×1010 cm-2,the spectral response in the whole wavelength region significantly degrades. As the fluence reaches to 2.3×1011 cm-2,the spectral response disappears.
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TiO 2 film deposited on glass was irradiated in air with single-shot KrF excimer laser pulse. The surface roughened as the result of the laser ablation. It is further noted that single-pulse irradiation with fluence ranging from 400 to 1200 mJ/cm 2 gave rise to protrusion of the irradiated surface above the original surface, which is in contrast to usual expectation that irradiated surface is below the unirradiated surface. The surface protrusion is mainly attributed to the effect of surface tension. At the laser fluence of 1000 mJ/cm 2 , cracks were formed in the irradiated area and severe film exfoliation was observed at the periphery of the irradiated area due to the release of internal stress. With higher laser fluence above 1000 mJ/cm 2 , patches of film were observed to peel off within the irradiated areas. Hydrodynamic ablation is proposed to account for film exfoliation. The observed phenomenon is useful for further understanding how TiO 2 film reacts to strong UV laser irradiation.
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In this paper, laser induced reactions of bulk defects in DKDP crystals were real-time detected by ultra-microscopy while high power laser irradiation with different photon energy, and the defect elimination processes were observed. It's found that there were two kinds of bulk defects that can be eliminated: submicron-scale defect and nanoscale defect clusters. The decrement of submicron-scale defects was related to the laser parameters, such as laser fluence and photon energy. The defect decrement could achieve its maximum value at appropriate laser fluence, while the photon energy was fixed. It indicated that up to ~47% of defects could be eliminated by laser irradiation at 3.50eV (355nm). While the laser fluence was fixed, the amount of defects reduced by laser irradiation at 3.50eV was larger than that at 1.17eV (1064nm). The nanoscale defect clusters were hard to be eliminated by laser irradiation at 1.17eV, while most of them could be reduced by laser irradiation at 3.50eV.
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