Applying and detecting tip-induced local strain on monolayer MoS 2 /graphite with scanning tunneling microscopy and inelastic electron tunneling spectroscopy
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Strain (injury)
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We report the measurements of the electron transport of an individual C60 molecule through the combination of two experimental efforts. The nanometer-sized junctions were fabricated using electromigration combined with electron beam lithography and shadow effect evaporation. We performed the scanning tunneling microscopy/spectroscopy measurements of dispersed C60 molecules which were deposited on a highly ordered pyrolytic graphite substrate. The single electron tunneling through a single C60 molecule due to the Coulomb blockage effect is observed at room temperature.
Coulomb blockade
Electromigration
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Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation P. Sutter; Energy‐Filtered Scanning Tunneling Microscopy using a Semiconductor Tip. AIP Conf. Proc. 18 December 2003; 696 (1): 28–36. https://doi.org/10.1063/1.1639674 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioAIP Conference Proceedings Search Advanced Search |Citation Search
Dangling bond
Scanning Probe Microscopy
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We have performed simultaneous scanning tunneling microscopy and atomic force microscopy measurements in the dynamic mode using metal-coated Si cantilevers at room temperature. Frequency shift (Δf) and time-average tunneling current (⟨It⟩) images are obtained by tip scanning on the Si(111)-(7×7) surface at constant height mode. By measuring site-specific Δf(⟨It⟩) versus tip-surface distance curves, we derive the force (tunneling current) at the closest separation between the sample surface and the oscillating tip. We observe the drop in the tunneling current due to the chemical interaction between the tip apex atom and the surface adatom, which was found recently, and estimate the value of the chemical bonding force. Scanning tunneling spectroscopy using the same tip shows that the tip is metallic enough to measure local density of states of electrons on the surface.
Surface reconstruction
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We report inelastic electron tunneling spectroscopy (IETS) of a C8 alkanethiol self-assembled monolayer using a scanning tunneling microscope (STM). High-resolution STM IETS spectra show clear features of the C-H bending and C-C stretching modes in addition to the C-H stretching mode, which enables a precise comparison with previously reported vibrational spectroscopy, especially electron energy loss spectroscopy data. Intensity variation of vibrational peaks with tip position is discussed with the STM IETS detection mechanism.
Electron spectroscopy
Self-assembled monolayer
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Theory of inelastic electron tunneling spectroscopy (IETS) of single adsorbates on metal surfaces with scanning tunneling microscope (STM-IETS) is presented. Adsorbate induced resonance model for studying tunneling processes via vibrational excitation of adsorbates enables us to derive general formulae for the elastic and inelastic tunneling currents. The condition under which the IETS spectrum (d2I/dV2) directly reflects the vibrational density of states of adsorbates was determined. It is found that two different time scales associated with the lifetime of tunneling electrons in the adsorbate and the residence time of electrons due to shuttling between the substrate/tip and adsorbate playimportant roles in the various features of STM-IETS spectra, including peak, dip, derivative-like or asymmetric structures.
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We have grown epitaxial single-crystal magnetotunnel junctions using Fe(001) substrates, MgO(001) spacers and Fe top electrodes. We have used scanning tunneling microscopy and atomic force microscopy to measure the tunneling characteristics as a function of position and demonstrated that local tunneling can be obtained such that the buried MgO can be characterized with nm resolution. Local I(V) curves revealed that most of the area had intrinsic tunneling properties corresponding to the proper MgO tunneling barrier. A small fraction of the scanned areas showed localized spikes in the tunneling current which are most likely caused by defects in the MgO.
Crystal (programming language)
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By using scanning tunneling microscopy/spectroscopy, we have studied the current–voltage characteristics of two-dimensional (2D) Au clusters, thermally deposited on self-assembled alkanethiol monolayer. The curves display Coulomb blockade and staircase with asymmetric behavior. The measured zero conductance gap as a function of cluster size is in excellent agreement with classical model calculations, in which the 2D Au island is treated as metallic in the planar direction but nonmetallic in the normal direction.
Coulomb blockade
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A scanning tunneling microscopy (STM) study of the α-Sn/Ge(111) at low temperature is presented. The scanning tunneling spectroscopy (STS) measurements of the surface evidenced a metallic character from the room temperature down to the 3×3 transition temperature. The fluctuation model for the √3×√3 reconstruction is confirmed by dynamical measurements of the tunneling current on top the Sn adatoms. The STM tip was used as a probe to verify the presence of oscillating Sn adatoms by studying the tunneling current as a function of time.
Scanning Probe Microscopy
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Mechanism of the negative differential resistance (NDR) observed in the scanning tunneling spectroscopy of the Si(111)√3×√3-B surface is discussed based on the simulation with the first-principles electronic states calculation. The NDR is reproduced by the W10[111] tip model, but not by the W14[110] and Pt10[111] models. The presence of the localized dangling bond state near EF for the surface in conjunction with a single tunnel active orbital at the tip apex causes the NDR.
Dangling bond
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