Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs
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Impact of physical parameters of ferroelectric layer on the performance of Negative Capacitance (NC) MOSFETs is experimentally studied in this paper. Electrical behaviors of PZT-based and Si:HfO 2 -based NC-FETs are investigated and discussed. In a PZT-based p-type NC-FET, a sub-thermal swing down to 20mV/dec is achieved due to the remarkable voltage gain of NC, reaching a maximum value of 10V/V. Nevertheless, the performance improvements with Si:Hf5O 2 NC booster are significantly lower than PZT due to the coexistence of different phases and also high leakage current which can enormously reduce the enhancement by NC.Keywords:
Booster (rocketry)
With semi-active piezoelectric shunted damping technology,when different structures of negative capacitance shunted circuits are used,the system damping is different.Semi-active shunted circuits with negative capacitance are discussed including three forms: series negative-capacitance resistance;series negative-capacitance resistance and inductive;parallel negative-capacitance resistance.With a energy dissipation model,the energy dissipation factor and the stiffness ratio of different shunted configurations are analyzed and compared.The series negative-capacitance,resistance and inductive shunted system has higher damping performance at lower frequencies with a broader band,while the damping performance of the parallel negative-capacitance resistance shunted system is better at high frequencies.
Equivalent series resistance
Negative resistance
Dissipation factor
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This paper proposed a sorting-based condition monitoring strategy for capacitors of submodule (SM) in modular multilevel converters (MMCs). It reveals the relationship between the capacitor's capacitance and SM insertion time. Based on the relationship, the capacitances of SM capacitors in the arm are indirectly sorted, and only the capacitor with smallest capacitance in the arm are monitored. The proposed strategy not only realizes capacitance monitoring in MMCs for sorting-based method, but also proposes a simplified monitoring algorithm for MMCs with large number of capacitors. The simulation and experimental results confirm the effectiveness of the proposed monitoring strategy for MMCs.
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In this work, we investigated the negative capacitance behavior of novel ferroelectric versatile memory with low‐voltage‐driven and fast ferroelectric switching. The combined storage mechanism strengthened the stability of ferroelectric polarization by interface aligned dipoles. The simulation results of first principle calculation indicated that the monoclinic‐like orthorhombic phase of ferroelectric hafnium oxide facilitated the occurrence of S‐shaped negative capacitance behavior. Furthermore, the control of phase transition may affect ferroelectric property and negative capacitance effect during program and erase states.
Ferroelectric capacitor
Monoclinic crystal system
Orthorhombic crystal system
Non-Volatile Memory
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Currently the method can only calculate the capacitance of simple and regular capacitor in electromagnetic.In this study,the actual problems associated with the complex capacitors are investigated and classified.Therefore,a method of mending by replacing a damaged part and a method for integral on the conclusion are proposed to calculate the capacitance of complex capacitor.The second method can also be classified as the conclusion integral method for parallel capacitor and the export conclusion integral method for generic.The study greatly contributes to the theory for calculating capacitance of capacitor by extending the export conclusion integral method for generic to calculate the more perplexing capacitor.
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The parameters affecting the capacitance measurement of compressed gas capacitors which are used as high-voltage standards are investigated. The temperature coefficient of compressed gas capacitors in the range of 2 to 3 · 10 −5 K −1 , as well as inevitable ambient temperature changes and gradients within high-voltage halls, were found to be mainly responsible for the limitation in the accuracy of precise capacitance measurements. A method is given to distinguish between capacitors with high- and low- voltage dependence of capacitance, without applying high voltage to them. The voltage dependence of a commercially available 120-kV, 100-pF capacitor could be considerably reduced by renewing and readjusting its electrode system. The natural frequencies of the mechanical electrode system of capacitors with rated voltages between 100 and 800 kV were found to be between 38 and 8 Hz, respectively.
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Capacitance probe
Filter capacitor
LCR meter
Film capacitor
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Today, nano-sized capacitors are widely used for storage of electric energy. Consequently, it’s too important the knowing how to estimate their capacitance theoretically. This can’t be done based on the standard formula useful for macroscopic capacitors with bulk dielectric layers. There is proposed a new formula determining nanocapacitance from effective permittivity and effective thickness of the nanofilm dielectric placed between the nanocapacitor plate-electrodes. This formula explains how the capacitance of a nanocapacitor may significantly differ from its geometric value.
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In the development of metallized film power capacitors, accelerated aging experiments are carried out in order to predict the lifetime of a capacitor under nominal operating conditions. For metallized film capacitors the decrease of capacitance with time is very small even in accelerated aging. Consequently, these experiments require extremely precise measurement methods for the capacitance. We have developed two different approaches for the precise calculation of the capacitance from voltage and current data measured during aging. The first method works with calculations in the time domain, whereas the second method works with Fourier transforms of the data. In this paper, we show results of long term measurements on power capacitors during which both measurement methods were applied in parallel. Both methods permit to measure the capacitance with a relative statistical error of only 4ldr10 -5 . We show that at this low noise level, even small capacitance changes caused by the temperature dependence of the dielectric constant together with small voltage fluctuations become measurable.
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With the rise of temperature and humidity, the electrode corrosion of metallized film capacitors under AC voltage becomes more significant. And the corresponding capacitance loss makes capacitors behave abnormally. This paper concentrates on the capacitance loss analysis of metallized film capacitors. Firstly, this paper establishes an experimental platform with a voltage of 305Vrms. The ambient temperature is 85°C, 60°C and 35°C, respectively. And the ambient humidity is 35%, 60%, and 85%, respectively. Secondly, the mechanism of capacitance loss is studied based on experiment results and the anatomical analysis of the capacitors. Finally, the capacitance loss of the metallized film capacitor with the effects of temperature and humidity is studied. The results indicate that: (1) The process of capacitance loss can be basically divided into 4 stages. Each stage corresponds to different mechanisms;(2) The duration of the moisture ingress process decreases as humidity rises or temperature decreases, while the capacitance loss is accelerated with the rise of temperature and humidity.
Film capacitor
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