Characteristics Analysis of Si0.5Ge0.5 Doping-Less PNPN TFET
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A theoretical study was carried out to analyze the impact of composite effect on dielectric constant and tunability in the ferroelectric–dielectric system. Models of Ba 0.5 Sr 0.5 TiO 3 –Mg 2 TiO 4 , Ba 0.45 Sr 0.55 TiO 3 –MgO and Ba 0.5 Sr 0.5 TiO 3 –MgO–Mg 2 SiO 4 system were constructed. The corresponding dielectric constant, tunability, and electric field distribution were obtained from the finite element analysis and the connections between these parameters were analyzed. The effects of the relative relationship between the dielectric constant of ferroelectric and dielectric on the whole dielectric properties were also analyzed by constructing a series of models with different dielectrics.
Dielectric loss
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In modeling the dielectric properties of inhomogeneous materials, the treatment of the electric field interaction s differentiate the usual modeling formalism and their accuracy. In this paper, we show that the performance of effective medium methods is dependent upon a number of variables - defect concentration, alignment, and the dielectric constant of the material itself. Using our previously developed finite element model of an inhomogeneous dielectric, we have developed models for a number of dielectric films of varying dielectric constant and microstructures. Alignment to of defects parallel to the applied field and the larger defect aspect ratios increase the overall dielectric constant. The extent of these effects is dependent on the dielectric constant of the bulk component.
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Dielectric loss
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Synthesis and characterization of SnO2 thin films with various types of doping materials such as aluminum, fluorine and indium have been successfully carried out. This study aims to determine the effect of various types of doping materials on the quality of thin films such as the energy band gap produced. The results showed that the higher the doping concentration, the more transparent the layer formed. In addition, the optical properties of thin films such as band gap energy are affected by the applied doping. The direct and indirect values of the largest band gap energy for the percentage of 95:5% are 3.62 eV and 3.92 eV are found in the SnO2: In thin layer. Meanwhile, the lowest direct and indirect values of band gap energy are in the thin layer of SnO2:(Al+F+In) for a percentage of 85:15%, namely 3.41 eV and 3.55 eV. The greater the amount of doping given, the smaller the bandgap energy produced. In addition, the more combinations of doping mixtures (aluminum, fluorine, and indium) given, the smaller the bandgap energy produced. This shows that the quality of a thin film of SnO2 produced is influenced by the amount of concentration and the type of doping used
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The percolative ceramic composites of Ba0.75Sr0.25TiO3∕Ag (BST/Ag) with dense microstructure were sintered at a low temperature of 960°C. Excellent dielectric properties, such as high dielectric constant (εr∼24000), low dielectric loss, and high dielectric tunability, were reported. The dielectric constant is found to be nearly temperature and frequency independent. It is essential to introduce the low-melting-point metal of silver into BST ceramics for significantly enhancing the dielectric properties of the composites. The superproperties make it potential to be used for electronic devices such as high charge-storage capacitors and tunable filters.
High-κ dielectric
Dielectric loss
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Composites have been extensively studied for dielectric and related applications. This is a review of polymer based 0–3 composites that exhibit a high dielectric constant. These composites are classified into two types: Dielectric–dielectric composite and conductor–dielectric composite. The physical principles and related models are presented with associated assumptions and approximations. In general, a dielectric–dielectric composite needs a higher concentration of the fillers to reach a high dielectric constant than a conductor–dielectric composite. The high dielectric constant observed in the conductor–dielectric composites is usually associated with a high dielectric loss and a low electric breakdown field. The experimental results are summarized to illustrate the principles for, and the achievements in, the development of these composites. The challenges facing the fundamental understanding and the further development of these composites for different applications are discussed.
High-κ dielectric
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A new A site complex lead-free ferroelectric ceramics of(1-x-y)BNT-xBKT-yBiCoO3 was prepared by a conventional ceramic sintering technique.The relation between composition and dielectric properties,dielectric properties and frequency were investigated.It was found that the dielectric constant and dielectric loss of unpoled samples is higher that those of poled samples.The dielectric constant and dielectric loss of unpoled samples decrease with the increase content of BiCoO3.The dielectric constant and dielectric loss of unpoled and poled samples increase with the content of BKT increasing.The dielectric constant decreases with frequency increasing,and the decreasing trend become slowly.The dielectric loss first decrease and then increase with increasing frequency.
Dielectric loss
Ferroelectric ceramics
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The physical and chemical properties of V-M″ and Nb-M″ (M″ is 3d or 4d transition metal) co-doped BaTiO3 were studied by first-principles calculation based on density functional theory. Our calculation results show that V-M″ co-doping is more favorable than Nb-M″ co-doping in terms of narrowing the bandgap and increasing the visible-light absorption. In pure BaTiO3, the bandgap depends on the energy levels of the Ti 3d and O 2p states. The appropriate co-doping can effectively manipulate the bandgap by introducing new energy levels interacting with those of the pure BaTiO3. The optimal co-doping effect comes from the V-Cr co-doping system, which not only has smaller impurity formation energy, but also significantly reduces the bandgap. Detailed analysis of the density of states, band structure, and charge-density distribution in the doping systems demonstrates the synergistic effect induced by the V and Cr co-doping. The results can provide not only useful insights into the understanding of the bandgap engineering by element doping, but also beneficial guidance to the experimental study of BaTiO3 for visible-light photoelectrical applications.
Visible spectrum
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A novel method of estimating the dielectric constant has been devised based on a theoretical treatment of dielectrics. The expression obtained enables the electronic and ionic components of the dielectric constant to be estimated from data in the literature. The orientational component can be isolated by measuring the temperature dependence of the dielectric constant. The dielectric constants of low-k materials which have not been synthesized can be estimated using this expression.
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This paper discusses the effects of pore arrangements on the dielectric property of porous low-k and high-k dielectrics. Higher performance large scale integration (LSI) requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical strength causes fractures of porous low-k dielectrics during Chemical Mechanical Polishing (CMP) process. Therefore, it is important to develop porous low-k dielectrics with high mechanical strength and low dielectric constant. On the other hand, porous high-k dielectrics are needed as ferroelectrics. It is also important to understand the dielectric property of porous high-k dielectrics. We studied the dielectric property of porous low-k and high-k dielectrics by finite element method and U* theory. The index U* is used to indicate load paths in a structure. We extended U* theory to the electrostatic field problem and investigated the dielectric property of dielectrics. By using U* in electrostatic field analysis, the dielectric performance of porous low-k and high-k dielectrics becomes more clear.
High-κ dielectric
Chemical Mechanical Planarization
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