Structural, optical and electrical properties of CeO2 thin films simultaneously prepared by anodic and cathodic electrodeposition
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In the paper, we derive an algorithm which follows from the original van der Pauw’s technique for measuring resistivity with the added advantage of allowing contacts to be positioned a distance away from the boundary. For a large sample area, we show that the resistivity calculated by our algorithm is equivalent to the resistivity calculated by the original van der Pauw’s method. In practice, this configuration is easier to achieve and can eliminate errors associated with contacts that are not placed exactly at the edge.
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The validity of four-contact van der Pauw--Hall measurements of rectangularly shaped semiconductors with anisotropic transport properties is investigated analytically, numerically, and experimentally. We show that the carrier concentration is correctly measured using the van der Pauw technique without corrections. Furthermore, the asymmetry in the resistance of the van der Pauw sample is related to the real transport asymmetry through an analytically obtained formula. Thus, the mobility in both principal directions as well as the carrier density can be obtained from van der Pauw data. Measurements of electron concentration and mobility using both the Hall-bar and van der Pauw geometries in semiconductor coupled quantum-wire structures confirm this expectation for different anisotropies.
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The electrical resistivity is an intrinsic property independent of the size or shape of a material, which gives us information about how the material behaves at the rate of electric current. For the value of the resistivity of a material, it can be classified as conductor, semiconductor or insulation.
In this thesis will be done the study of the electrical resistivity in the semiconductors, the methods of measurement of resistivity, the correction factors that are very important for a more accurate measurement and the details of the implementation of a measurement system of resistivity by the Van der Pauw method.
The Van der Pauw method can be used to measure the resistivity of materials in the form of thin films regardless of the shape of the material.
It consists of flowing a constant current through two points at the periphery and measuring the voltage at two other points. With the data obtained the Van der Pauw equation is solved and the resistivity is obtained.
Finally, we present the results of the resistivity measurements for square samples of high doping silicon, and also a study of the results obtained when the measurement is made in contacts on the surface area of the sample, failing to use contacts in the periphery, and the effects that this entails.
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Using finite element analysis,the authors studied the relative error of the van der Pauw method for resistivity measurement in diamond anvil cell(DAC).It was found that the electrode contact area is a key factor affecting the accuracy of the van der Pauw method for resistivity measurement.Always the relative error increases with the increase of contact area,and this is especially obvious for semiconductor samples.But whether the electrodes have point contacts or not,the van der Pauw method would provide accurate result so long as the ratio of sample thickness to its diameter is less than 0.45,and the ratio of the side length of electrode contact area to sample diameter is less than 0.1.
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Abstract The Van der Pauw method has tremendous significance in measuring material resistivity in arbitrary shapes. The extended Van der Pauw method can be used to measure the resistivity of anisotropic materials or even materials with holes without enormous measurements or calculations. However, the method requires that the material be thin enough to be considered quasi-two-dimension, and the measurement of equivalent resistance is largely influenced by contact resistance. This paper aims to find the factors that influence the measurement’s accuracy by formula analyzing, trying to improve the precision of Van der Pauw’s measurement.
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Using finite element analysis, the authors studied the steady current field distribution under the configuration of van der Pauw method [L. J. van der Pauw, Philips Tech. Rev. 20, 220 (1958)] for resistivity measurement in a diamond anvil cell. Based on the theoretical analysis, the authors obtained the theoretical accuracy curve of the van der Pauw method. This method provides accurate determination of sample resistivity when the ratio of sample thickness to its diameter is less than 0.45. They found that the contact area between electrode and sample is a key factor in the resistivity measurement accuracy and its size is dependent on the sample diameter for a given measurement accuracy.
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The van der Pauw geometry has been widely used for the measurement of resistivities and Hall coefficients. Although the measurement of a Hall coefficient requires a finite magnetic field, it should be noted that van der Pauw’s expression is valid only in the limit of zero field; in addition to the Hall contribution, measurements in a finite magnetic field generally include a term associated with field-induced changes in the longitudinal resistivity. Although a simple solution to this problem entails taking the difference between readings in opposite field directions, there are circumstances where this may be impractical. In this note we present a straightforward extension of the van der Pauw calculation which allows a determination of the Hall coefficient from quantities measured in one field direction only.
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Apparatus is described that permits measurement of the electrical transport properties of semiconductors with resistance values over 1012 Ω. The system utilizes a guarded approach to the van der Pauw method which simplifies sample geometry and contacting and permits evaluation of thin layers. The equipment is easy to operate, reliable, and constructed of readily available commercially purchased components.
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