Static characteristic evaluation of low-temperature deposition process for SiGeHEMT by Sputter Epitaxy Method

Highly oriented large‐area silicon films have been deposited onto single crystal Si, '111' substrates. Illumination of the substrates with a mercury vapor lamp during deposition appeared to be essential for obtaining oriented films. The deposition was accomplished by an H2 reduction of . The energy of activation for this reaction was found to be 35.7 kcal/mole ± 5%. Utmost chemical cleanliness of the substrate surface is essential and more critical than for high temperature deposition.

Deposition

10.1149/1.2411228

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Citations (43)

Evaluation of low-temperature deposition process of SiGeHEMT by Sputter Epitaxy Method

The Japan Society of Applied Physics (2017)

Katsumi Okubo Akira Motohashi Degura Kyouhei Nobumitsu Hirose Akifumi Kasamatsu

Deposition

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Growth of single-crystalline GaN layer by UHV sputter-epitaxy method (２)

The Japan Society of Applied Physics (2018)

Masaki Iwamoto Takuya Osada Ai Mizuno Ki Ando Hiroyuki Shinoda

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Evaluation of Strained-Si formed by low-temperature Sputter Epitaxy Method

The Japan Society of Applied Physics (2016)

Kyohei Degura Akira Motohashi Katsumi Okubo Nobumitsu Hirose Akifumi Kasamatsu

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Application of Cl₂ for low temperature etch and epitaxy

Semiconductor Science and Technology (2019)

Andriy Hikavyy Clément Porret Erik Rosseel Alexey Milenin Roger Loo

In this work, two most typical applications of Cl2 etch relevant for sub-10 nm CMOS device production, namely sacrificial etch and selective deposition are presented. It is shown that Si0.7Ge0.3 sacrificial etch with Cl2 is possible in the temperature range of 350 °C–400 °C when He is used as a carrier gas. This temperature range can be further lowered when He is substituted with N2. Use of N2 also allows Si etch at very low temperatures (∼400 °C) which are not accessible for etching with HCl and potentially can be used for sacrificial etch of Si and Si-based epitaxial selective growth processes. Furthermore, a combination of Cl2 with high order Si and Ge precursors allowed development of cyclic selective epitaxial processes at temperatures as low as 400 °C with active dopant concentrations of ∼1 × 1020 cm−3 for Si0.7Ge0.3:B and ∼3 × 1019 cm−3 for Si0.7Ge0.3:P.

Etch pit density

Atmospheric temperature range

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10.1088/1361-6641/aafc93

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Growth of GaN layer by UHV sputter-epitaxy method

The Japan Society of Applied Physics (2020)

N. Fukuda Masaki Iwamoto Takuya Osada Ai Mizuno Ki Ando

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