Comparative analysis of memristor models and memories design
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The advent of the memristor breaks the scaling limitations of MOS technology and prevails over emerging semiconductor devices. In this paper, various memristor models including behaviour, spice, and experimental are investigated and compared with the memristor's characteristic equations and fingerprints. It has brought to light that most memristor models need a window function to resolve boundary conditions. Various challenges of availed window functions are discussed with matlab's simulated results. Biolek's window is a most acceptable window function for the memristor, since it limits boundaries growth as well as sticking of states at boundaries. Simmons tunnel model of a memristor is the most accepted model of a memristor till now. The memristor is exploited very frequently in memory designing and became a prominent candidate for futuristic memories. Here, several memory structures utilizing the memristor are discussed. It is seen that a memristor-transistor hybrid memory cell has fast read/write and low power operations. Whereas, a 1T1R structure provides very simple, nanoscale, and non-volatile memory that has capabilities to replace conventional Flash memories. Moreover, the memristor is frequently used in SRAM cell structures to make them have non-volatile memory. This paper contributes various aspects and recent developments in memristor based circuits, which can enhance the ongoing requirements of modern designing criterion.Keywords:
Memristor
Memistor
Non-volatile random-access memory
Non-Volatile Memory
Flash Memory
Summary form only given. Semiconductor memory market has been driven by DRAM. However non-volatile memory market, flash memory as a representative, is growing remarkably because of its versatile application market such as cellular phone, PC memory card, silicon audio, digital still camera storage, automobile application with MCU and so forth. In terms of testing, it is quite different from DRAM. The author describes the differences, requirements and solutions for flash memory repair and testing from the viewpoint of ATE.
Flash Memory
Dram
Universal Memory
Non-volatile random-access memory
Non-Volatile Memory
Flash memory emulator
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Memristor is a newly invented device and since it has been found, has drawn a lot of attention from integrated electronics designers because of its nanometer size and special electrical properties. One of the most significant characteristics of a memristor is its memory property. In this paper, a nonvolatile memory cell, based on the hybrid structure of memristor and Complementary Metal-Oxide-Semiconductor (CMOS) is proposed which can be used as a resistive Random Access Memory (RAM). This cell can store data in either binary or non-binary (multilevel) logic, increasing the amount of storable data per square area of a memory chip by increasing the levels of stored data. The methodologies of work with this multilevel logic and data saving and retention are discussed and the suitable one is chosen. The proposed memory cell has a read time comparable to other RAMs and flash memories and percent׳s of area reduction per two bits of data with at least 50% increase in reading speed – for ternary logic – per data. Power consumption is also reduced. The buffer for this cell corresponding to ternary logic is also presented.
Memristor
Memistor
Non-volatile random-access memory
Flash Memory
Non-Volatile Memory
Memory cell
Data retention
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Flash Memory
Non-volatile random-access memory
Flash memory emulator
Racetrack memory
Sense amplifier
Non-Volatile Memory
Universal Memory
Charge trap flash
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The computer memory system has both volatile and non volatile memory. The Volatile memories such as SRAM and DRAM used as a main memory and non volatile memory like flash memory. But in recent days new non volatile technologies are invented that promise the rapid changes in the landscape of memory systems. Memristor is a two terminal passive element whose resistance depends on the magnitude and polarity of the voltage applied to it. It has nonlinear relationship between voltages and current which is similar to memory devices. In this paper we approach to design memristor based nonvolatile 6-T static random access memory (SRAM) and analysis the circuit performance with conventional 6-T SRAM cell in order to prove the parameter optimizations. Then we address the memristor-based resistive random access memory (MRRAM) which is similar to that of static random access memory (SRAM) cell and we compare the nonvolatile characteristics of MRRAM with SRAM cell. Index terms: NV memory, memristor, SRAM, Resistive RAM, SPICE model.
Memristor
Non-volatile random-access memory
Non-Volatile Memory
Universal Memory
Memistor
Flash Memory
Memory cell
Memory architecture
Dynamic random-access memory
Sense amplifier
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Flash is the most popular solid-state memory technology used today. A range of consumer electronics products, such as cell-phones and music players, use flash memory for storage and flash memory is increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and servers. There is a rich microarchitectural design space for flash memory, and there are several architectural options for incorporating flash into the memory hierarchy. Exploring this design space requires detailed insights into the power characteristics of flash memory. In this paper, we present FlashPower, a detailed power model for the two most popular variants of NAND flash, namely, the single-level cell (SLC) and 2-bit Multi-Level Cell (MLC) based flash memory chips. FlashPower is built on top of CACTI, a widely used tool in the architecture community for studying various memory organizations. FlashPower takes several parameters like the device technology, microarchitectural layout, bias voltages and workload parameters as input to estimate the power consumption of a flash chip during its various operating modes. We validate FlashPower against chip power measurements from several different manufacturers and show that our results are comparable to the actual chip measurements. We illustrate the versatility of the tool in a design space exploration of power optimal flash memory array configurations.
Flash Memory
Racetrack memory
Flash memory emulator
Universal Memory
Non-volatile random-access memory
Non-Volatile Memory
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The author describes how, competing for the US $ 11 billion portable electronic device memory market are several venerable but revitalized memory systems as well as new storage technologies: flash memory cards; PC memory cards; and small disk drives. Flashers, a relatively young technology contain one or more nonvolatile solid-state memory chips. They have no moving parts and retain data in the absence of power. Like these, but an industry unto itself, is the PC Card; now almost 10 years old, the business-card-sized memory and application device is heavily used to add functions to mobile computers. The spinners are a completely upgraded group of rotating disk drive systems based on both magnetic and optical technologies.
Flash Memory
Non-volatile random-access memory
Non-Volatile Memory
Conventional memory
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Memristor
Memistor
Neuromorphic engineering
Non-Volatile Memory
Non-volatile random-access memory
Flash Memory
In-Memory Processing
Conventional memory
Memory cell
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Emerging concepts of non-volatile memories are more and more investigated to replace conventional charge storage-based devices like EEPROM or Flash. One of these promising memory concepts is called Resistive Switching Memory (ReRAM). Such memory is based on a switching mechanism controlled in current and/or voltage, between two distinct resistive states depending upon the material nature integrated in memory element. To lead such memory concept to a memory circuit or even, to a product, a big effort has to be done to forecast tools necessary to design and test this emerging memory. In this paper, a particular technology of ReRAM memories is introduced. First, an electrical model (ELDO-like) of a MIM-based (Metal/Insulator/Metal) ReRAM memory element is presented. Then, this model is used for the robustness assessment of ReRAM memory element in presence of actual defects inherent to CMOS process steps. Based on this electrical model, a big hurdle has been broken between material physics, design and test. Thus, new methods and solutions could be developed in the field of design and test for ReRAM memories.
Non-Volatile Memory
In-Memory Processing
Non-volatile random-access memory
Flash Memory
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Mapping neuro-inspired algorithms to sensor backplanes of on-chip hardware require shifting the signal processing from digital to the analog domain, demanding memory technologies beyond conventional CMOS binary storage units. Using memristors for building analog data storage is one of the promising approaches amongst emerging non-volatile memory technologies. Recently, a memristive multi-level memory (MLM) cell for storing discrete analog values has been developed in which memory system is implemented combining memristors in voltage divider configuration. In given example, the memory cell of 3 sub-cells with a memristor in each was programmed to store ternary bits which overall achieved 10 and 27 discrete voltage levels. However, for further use of proposed memory cell in analog signal processing circuits data encoder is required to generate control voltages for programming memristors to store discrete analog values. In this paper, we present the design and performance analysis of data encoder that generates write pattern signals for 10 level memristive memory.
Memristor
Memistor
Memory cell
Non-volatile random-access memory
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Flash memory falls under the nonvolatile read–write memory (NVRWM) class and is an important and vital part of memory industry. It can hold the data even if the power is disconnected from the system. For the past few decades, the flash memory market size and usage have been rising exponentially. Flash memory is a fundamental element in all computing systems and mobile devices including digital imaging and audio applications. Demands for lower processing cost and higher information density in flash memory are on the rise. The most effective way to achieve these goals is to store multiple bits of data in a single memory cell leading to higher information density and lower silicon footprint. This chapter briefly explains the operating principle of flash memory and provides some examples of the use of Multi-Valued-Logic (MVL) in flash memory. A comparison of some state-of-the-art MVL based flash memory designs is also included.
Flash Memory
Non-volatile random-access memory
EEPROM
Flash memory emulator
Non-Volatile Memory
Racetrack memory
Memory map
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