P‐16: Implementation of TCAD Simulation of a‐IGZO Corbino TFTs for AMOLED Application
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We studied the effects of Corbino structure amorphous indium‐galium‐zinc oxide (a‐IGZO) thin film transistors (TFTs) using TCAD and circuit simulator. The Corbino structure shows the special behavior with drain electrode in inner or outer. By simulation, we confirm the Corbino structure have better performance than conventional structure for AMOLED pixel circuit.Keywords:
AMOLED
In this paper, we proposed a novel voltage-programmed pixel circuit based on amorphous indium gallium zinc-oxide thin-film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting display (AMOLED) with an enhanced electrical stability and uniformity. Through an extensive simulation work based on a-InGaZnO TFT and OLED experimental data, we confirm that the proposed pixel circuit can compensate for both mobility variation and threshold voltage shift of the driving TFT.
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We propose a new hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel circuit for an active matrix organic light-emitting diode (AMOLED) employing a voltage programming. The proposed a-Si:H TFT pixel circuit, which consists of five switching TFTs, one driving TFT, and one capacitor, successfully minimizes a decrease of OLED current caused by threshold voltage degradation of a-Si:H TFT and OLED. Our experimental results, based on the bias-temperature stress, exhibit that the output current for OLED is decreased by 7% in the proposed pixel, while it is decreased by 28% in the conventional 2-TFT pixel.
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A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified and proved by circuit analysis and circuit simulations. The proposed circuit was able to compensate for the threshold voltage variations of the drive TFT in AMOLEDs. The error rate of the OLED current for a threshold voltage change of 3 V was as low as 1.5%.
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Amorphous silicon (a-Si) thin film transistors (TFT's) were fabricated on free-standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a-Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT's and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLCD or AMOLED displays on clear plastic substrates with the TFT processes currently used for glass substrates.
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A voltage-programmed a-IGZO TFT pixel circuit for AMOLED display systems is proposed in this paper. Compensation schemes together with a simple driving strategy are proposed for threshold voltage shift and mobility variations of the driving TFT, as well as the OLED degradation. Simulation results indicate that the current error rates (CERs) are reduced to lower than 11.9% when the mobility variation of the driving TFT is ±30%, and 8.1% when the threshold voltage shift of the driving TFT is ±0.5 V, for the entire data input range.
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Active matrix organic light emitting diode (AMOLED) displays based on amorphous indium-gallium-zinc oxide thin-film transistor (a-IGZO TFT) pixel circuit encounter problems as instability of threshold voltage (V T ) under gate voltage bias-stress, the non-uniformity of mobility (μ) resulting from the large area TFT scale fabrication, and OLED degradation, etc. In this paper, we proposed a current compensation method. An improved current mirror is designed to overcome the channel length modulation effect of TFTs. The SPICE simulation results show that the proposed scheme not only effectively compensates for non-uniformity related with deviations of V T and μ in a-IGZO TFTs, the OLED degradation, but also guarantees a good linearity between I DATA and I OLED .
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In this paper, we proposed a novel voltage-programmed pixel circuit based on amorphous indium gallium zinc oxide thin-film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting display (AMOLED) with an enhanced electrical stability and uniformity. Through an extensive simulation work based on a-InGaZnO TFT and OLED experimental data, we confirm that the proposed pixel circuit can compensate for both mobility variation and threshold voltage shift of the driving TFT.
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Oxide thin-film transistor
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We developed a hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) process on stainless steel (SS) foil substrates for high uniformity of TFT characteristics. The a-Si:H TFTs with channel length of 5μm showed a mobility of ∼0.3cm2/Vs and a threshold voltage of ∼4.5 V, which are similar to those of TFTs on glass substrates. We designed a pixel circuit with two a-Si:H TFTs and fabricated a 70ppi active-matrix organic light-emitting display (AMOLED) backplane on 75μm thick SS foil substrates. The pixel circuit can provide OLED current of up to 9.2μA at VDD=20V, Vscan=20V, and Vdata=15V. This current level can produce a luminance of greater than 500cd/m2 by an AMOLED using a white OLED with a luminous efficiency greater than“12cd/A and RGBW color filters.
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This letter proposes a new voltage-programmed amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) pixel circuit for active-matrix organic light-emitting diode (AMOLED) displays. The proposed circuit detects the VTH of the driving TFT only in a periodically executed compensation frame, allowing the other frames to perform only data input and emission for high-speed applications. An HSPICE model is also established based on the measured electrical characteristics of a fabricated a-IGZO TFT. The simulation results reveal that the proposed circuit can compensate for the degradation of the driving TFT and the OLED without external circuits. Moreover, the current error rates are <;6.32%, so the proposed circuit is effective for use in AMOLED displays.
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Abstract Amorphous oxide thin film transistor (TFT) arrays have been developed as TFT backplanes for large size active‐matrix organic light emitting diode (AMOLED) displays. An amorphous IGZO (Indium Gallium Zinc Oxide) bottom gate TFT with an etch‐stop layer (ESL) delivered excellent electrical performance with field‐ effect mobility of 21 cm 2 /V‐s, an on/off ratio of >10 8 , and subthreshold slope (SS) of 0.29V/dec. A full color 19‐inch AMOLED display has been developed using the amorphous IGZO TFT backplane.
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