Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules
Kohei OhtomoNana MatsumotoKoji AshidaTadaaki KanekoNoboru OhtaniMasakazu KatsunoShinya SatoHiroshi TsugeTatsuo Fujimoto
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The stacking fault formation during physical vapor transport growth of heavily nitrogen-doped (mid-10 19 cm −3 ) 4H-SiC crystals was investigated. Low-voltage scanning electron microscopy (LVSEM) observations detected the stacking fault formation on the (000-1) facet of heavily nitrogen-doped 4H-SiC crystals. Stacking faults showed characteristic morphologies, and atomic force microscopy (AFM) studies revealed that these morphologies of stacking faults stemmed from the interaction between surface steps and stacking faults. Based on these results, the stacking fault formation mechanism in heavily nitrogen-doped 4H-SiC crystals is discussed.Keywords:
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Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which allows for new device concepts. However, essential parameters that determine the electronic quality of the wires, and which have not been controlled yet for the III–V compound semiconductors, are the wire crystal structure and the stacking fault density. In this paper, we have used the molecular dynamics simulations to study the formation of the stacking faults in GaN NW along [0001] and [11-20] directions. The results show that under same growth condition the GaN NW along [0001] has stacking fault while there is no stacking fault in GaN NW along [11-20]. We have analysis the possible reason and further study is underway.
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We explore the effect of stacking fault defects on the transmission of forces in three-dimensional face-centered-cubic granular crystals. An external force is applied to a small area at the top surface of a crystalline packing of granular beads containing one or two stacking faults at various depths. The response forces at the bottom surface are measured and found to correspond to predictions based on vector force balance within the geometry of the defects. We identify the elementary stacking fault as a boundary between two pure face-centered-cubic crystals with different stacking orders. Other stacking faults produce response force patterns that can be viewed as resulting from repetitions of this basic defect. As the number of stacking faults increases, the intensity pattern evolves toward that of an hexagonal-close-packed crystal. This leads to the conclusion that the force pattern of that crystal structure crystal can be viewed as the extreme limit of a face-centered-cubic crystal with a stacking fault at every layer.
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Hexagonal boron nitride
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We explore the effect of stacking fault defects on the transmission of forces in three-dimensional face-centered-cubic granular crystals. An external force is applied to a small area at the top surface of a crystalline packing of granular beads containing one or two stacking faults at various depths. The response forces at the bottom surface are measured and found to correspond to predictions based on vector force balance within the geometry of the defects. We identify the elementary stacking fault as a boundary between two pure face-centered-cubic crystals with different stacking orders. Other stacking faults produce response force patterns that can be viewed as resulting from repetitions of this basic defect. As the number of stacking faults increases, the intensity pattern evolves toward that of an hexagonal-close-packed crystal. This leads to the conclusion that the force pattern of that crystal structure crystal can be viewed as the extreme limit of a face-centered-cubic crystal with a stacking fault at every layer.
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Cubic crystal system
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Using TEM we show that defective regions are formed in SiC by ion implantation, and that some of the regions grow at the expense of others. Using HRTEM we show that these regions contain a large number of stacking faults. It is proposed that these stacking faults are Frank intrinsic stacking faults formed by condensation of divacancies, and it is this defect that is associated with the DI defect.
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The role of stacking faults in the 3C→4H phase transformation in SiC was investigated by employing powder samples having different initial stacking fault densities and by intentionally adding 5mol% Al to suppress the effect of inherent impurities. The Al addition induced the predominant formation of 4H-polytype, and the grown 4H grains appeared to have a platelet shape. Stacking faults present in the 3C phase served as nucleation sites for the formation of 4H-polytype, but the rate of 4H growth after nucleation was higher in 3C-SiC having a smaller initial stacking fault density. Roles of stacking faults in the phase transformation and its mechanism are discussed.
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The behavior of H atoms near a stacking fault in W(111) surface is extensively studied based on first-principles density functional theory calculations. We find that H near the stacking fault can be captured and trapped in this defect. These trapped H atoms significantly weaken and even break the W–W bonds in the stacking fault, inducing accumulation of more hydrogen atoms in the stacking fault. Our calculations predict the accommodating capacity of the stacking fault for H to be larger than 3.4 × 1015 cm−2, consistent with the experimentally observed H blistering in W-based fusion reactor materials.
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Simple models for Shockley-type stacking-fault formations during 4H-SiC epitaxial growth are proposed. The model consists of the accidentally-faulted mis-stacking and the Shockley single-gliding events. At first, the mis-stacking event caused by imperfect step-flow growth is considered. Then the single-gliding event is followed to make more stable stacking sequences. Simple single-gliding is considered rather than complicated double, triple, or quadruple Shockley gliding. All possible mis-stacking and single-gliding events are considered. All of the reported Shockley-type SFs are derived without excess and deficiency from the proposed models.
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