Molecular carbon nitride ion beams for enhanced corrosion resistance of stainless steel
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The effectiveness of low-energy 5–10 keV As ion implantation for sub-0.1 µm metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been investigated. When implantation energy is lowered to 5 keV at a dose of 1×10 14 cm -2 , the sheet resistance of the diffused layer increases steeply. The origin of the sheet resistance increase in 5–10 keV As ion implantation has been quantitatively studied paying attention to dopant loss. We found that 43% of implanted As remains in a 5 nm screen oxide when implantation energy is lowered to 5 keV. Moreover 50–70% of As in Si is lost by dopant pileup at the SiO 2 /Si interface during 850°C annealing. The pileup problem becomes more severe with junction depth reduction. By optimizing the implantation energy and the ion dose, both low sheet resistance and ultrashallow junction depth have been simultaneously achieved.
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New simulation results for the sputtering of lunar soil surface by solar-wind protons and heavy ions will be presented. Previous simulation results showed that the sputtering process has significant effects and plays an important role in changing the surface chemical composition, setting the erosion rate and the sputtering process timescale. In this new work and in light of recent data, we briefly present some theoretical models which have been developed to describe the sputtering process and compare their results with recent calculation to investigate and differentiate the roles and the contributions of potential (or electrodynamic) sputtering from the standard (or kinetic) sputtering.
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We have performed Helium (He) ion implantation on InAs and performed post implant annealing to investigate the effect on the sheet resistance.Using the transmission line model (TLM) we have shown that the sheet resistance of a p + InAs layer, with a nominal doping concentration of 1x10 18 cm -3 , can increase by over 5 orders of magnitude upon implantation.We achieved a sheet resistance of 1x10 5 /Square in an 'asimplanted' sample and with subsequent annealing this can be further increased to 1x10 7 /Square.By also performing implantation on p-i-n structures we have shown that it is possible to produce planar photodiodes with comparable dark currents and quantum efficiencies to chemically etched reference mesa InAs photodiodes.
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Abstract The sputtering behaviour of hexagonal or wurtzite polycrystal nitrides of boron, aluminium, and gallium was explored employing methods of molecular dynamics. The sputtering yield Y of nitrides and the average energy Ē 1 of emitted particles were studied as dependent on the mass m 1 of bombarding He, Li, B, N, Ne, Al, Ar, Ni, Ga, Kr, and Xe ions with the initial energy E 0 between 200 and 10,000 eV. Y(m 1) and Ē 1(m 1) were researched upon for preferential sputtering of nitride components at low E 0. It was revealed that the ratio between the sputtering yield of the light component and that of the heavy one depends on ion energy and mass. At E 0=200 eV and m 1=40, the ratio for BN, AlN, and GaN amounts to 1.2, 2.2, and 2.4, respectively. For nitride components, an anomalous dependence of sputtering on ion mass was found, its maximum occurring at a certain ratio m 2/m 1, where m 2 is the averagè mass of two nitride components. Keywords: SputteringComputer simulationNitridesCollision cascades Acknowledgements We extend our appreciation to Yu.V. Martynenko for valuable advice. We would like to thank INTAS (grant 03-53-5607) and the Russian Foundation for Basic Research (grants 05-02-17227 and 05-02-17870) for support of the study.
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High-dose ion implantation of phosphorus into 4H–SiC has been investigated. Phosphorus ion implantation with a 1×1016 cm−2 dose at 800 °C into 4H–SiC (0001) has resulted in a sheet resistance of 80 Ω/□ after annealing at 1700 °C. A similar sheet resistance of 110 Ω/□ was achieved even by room-temperature implantation when 4H–SiC (112̄0) was employed, owing to excellent recrystallization of this face revealed by Rutherford backscattering channeling spectroscopy. The sheet resistance could be further reduced down to 27 Ω/□ by 800 °C implantation into 4H–SiC (112̄0) followed by annealing at 1700 °C. 4H–SiC (112̄0) showed a very flat surface after annealing.
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Polycrystalline Si films on oxidized Si wafers have been subjected to a rapid thermal processing anneal prior to As ion implantation. After ion implantation the films are given another rapid thermal processing anneal to activate the As. The preimplant anneal causes the as-deposited grain size to increase by ∼ a factor of 10. These films have a 20–30% lower sheet resistance than films that were post-implant annealed only. The increase in grain size by the preimplant anneal reduces the grain boundary area and therefore, minimizes the amount of dopant in the grain boundary relative to the grain.
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