logo
    New 3A/600V DIP-IPM with Reverse Conducting-IGBT
    IEEE Transactions on Power Electronics (2007)
    Eckhard Thal
    A super mini Dual In-line Package Intelligent Power Module(DIP-IPM Ver.4) with ratings of 3A/600V has been developed by using a new power chip technology.As this new technology which integrates FWD(Free Wheeling Diode) chip to IGBT chip in inverse parallel reduces a half of the power chip number in power module,this IPM makes reliability higher and handling power capability larger at same package size.This paper presents this new technology,the design and the characteristics of the 3A DIP-IPM Ver.4.
    Insulated-gate bipolar transistor
    Power module
    Citations (0)
    A New Generation of 600V Smart Power Module (SPM©) for Motor Drive Applications
    Bum-Seung JinSamuell ShinSung-dae ShinGeun-hyoung LeeHyun-soo Bae
    This paper introduces a new motion control 600V SPM of SPM3 30A product which utilizes the newly developed Field Stop trench (FST) IGBT with advanced Extreme Fast freewheeling diode with Direct Bonded Copper (DBC) substrates for high thermal performance. Especially, this module offers high power density with low IGBT and FRD losses. Also, the adopted IGBT turn on performance is optimized by its own characteristic for better Electro-Magnetic Interference (EMI) performance. This paper provides an overall description as well as electrical characteristics and thermal performance, FST technology IGBT about the newly developed 600V SPM(r) 3 module.
    Insulated-gate bipolar transistor
    Citations (0)
    Intelligent Power Module Featuring Optimised Active Gate Driver and IGBT Module Integration for Electric Vehicle Application
    2018 7th Electronic System-Integration Technology Conference (ESTC) (2018)
    Mingliang JiaoYun LiJun YuJia Qiang XiePin Zeng
    The Power-train design in the hybrid and electric vehicles (xEV) trends toward high efficiency and power density. Power semiconductor module is the key to improve inverter efficiency and density. This paper presents an intelligent power module (IPM) featuring optimized design and integration of active gate driver and IGBT module. An active gate driver with dI C /dt control is designed to reduce switching losses while keeping IGBT operation within safe operating area (SOA). The module is designed to directly supply the additional emitters to avoid cable connections between driver board and power module terminal. Moreover, dual sided cooling module structure not only improves IGBT thermal performance significantly but also enables EMI shielding between driver board and module In addition, bottom side components can be directly cooled by top heatsink. Benefiting from the optimized design and integration of driver and module, the IPM contributes to a higher power density and performance design of an xEV traction inverter.
    Insulated-gate bipolar transistor
    Gate driver
    Power module
    Power density
    Citations (0)
    Large area IGCTs with improved SOA
    IEEE Transactions on Power Electronics (2004)
    Abb Switzerland
    This paper presents three concepts for Safe Operating Area (SOA) improvements for large area IGCTs (Integrated Gate-Coramutated Thyristors) by: Optimized gate-circuit, improvement of the local SOA by optimized profiles, irradiation and compensation of lateral effects by means of irradiation. Local SOA optimization (on small devices) in connection with improved gate-circuit led to record-breaking SOA of 1MW/cm2 switching power density. The combination of all three approaches led to an SOA improvement of more the 30% for large area devices.
    Safe operating area
    Citations (18)
    Digital Control for Switched Mode Power Supplies with Improved Power Device Behaviour and Reconfigurable Functionalities
    Andrew Shorten
    Mode (computer interface)
    Digital Control
    Citations (0)