Characterization and Process Development of CVD/ALD-based Cu(Mn)/Co(W) Interconnect System

In this work, an approach for copper atomic layer deposition (ALD) via reduction of Cu _x O films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal Cu _x O ALD process is based on the Cu (I) β-diketonate precursor [( ⁿ Bu ₃ P) ₂ Cu(acac)] and a mixture of water vapor and oxygen ("wet O ₂ ") as co-reactant at temperatures between 100 and 130°C. Highly efficient conversions of the Cu _x O to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed/Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the Cu _x O films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents.

10.1109/scd.2011.6068736

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Adhesion and Nucleation Property of CVD-Cu on ALD-Co(W) Film as Cu Diffusion Barrier Layer

The Japan Society of Applied Physics (2013)

Kohei Shima

Diffusion barrier

Barrier layer

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Fabrication and characterization of p-type Cu 2 O thin films by mist CVD method

The Japan Society of Applied Physics (2013)

Takumi Ikenoue

Mist

Characterization

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Erratum: Study on the Adhesion Strength of CVD-Cu Films with CVD/ALD-Co(W) Underlayers Made Using Carbonyl Precursors [ECS Solid State Lett., 3, P20 (2014)]

ECS Solid State Letters (2014)

Kohei Shima Haruka Shimizu Takeshi Momose Yukihiro Shimogaki

10.1149/2.0081410ssl

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Citations (1)

ChemInform Abstract: Interconnection Formation by Doping Chemical‐Vapor‐Deposition Aluminum with Copper Simultaneously: Al‐Cu CVD.

ChemInform (1995)

Eiichi Kondoh Y. Kawano Nobuyuki Takeyasu Tomohiro Ohta

Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.

Deposition

10.1002/chin.199511328

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