MICROFABRICATION TECHNIQUE BY GAS PLASMA ETCHING METHOD
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The gas plasma etching technique is investigated as a tool of etching micro-patterns ranged from a few microns to submicrons mainly with polycrystalline silicon films as materials to be etched. The gas plasma etching is verified to be the ideal chemical etching. The undercutting at the top of the polycrystalline silicon film is nearly equal to the film thickness. It has been found that the etching in the diffused plasma is more suitable for etching micro-patterns and that the resist deformation is not observed after etching. The etching profile depends on the film thickness as well as on the applied RF power.Keywords:
Plasma Etching
Dry etching
Polycrystalline silicon
Isotropic etching
Dry etching or plasma-assisted etching (ion beam milling, plasma etching and reactive sputter etching) has become an indispensable preparation technique for high resolution pattern transfer in IC manufacturing and other areas of microfabrication. Etching can either be due to the purely physical process of momentum transfer from ions to the solid surface (e.g. inert ion etching) or due to chemical reactions of reactive species, produced in the plasma, with the solid surface resulting in a volatile reaction product (e.g. plasma etching in a barrel reactor). However, in most dry etching methods both effects play a major role and it is possible to optimize etch selectivity and the shape of the etched profile by a proper choice of parameters.
Dry etching
Plasma Etching
Isotropic etching
Inert
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Polycrystalline silicon is currently being investigated as the cathode material for flat panel displays using field emission. Conventional silicon microfabrication techniques have been adapted to produce highly uniform arrays of gridded polysilicon field emitters.
Polycrystalline silicon
Flat panel
Hybrid silicon laser
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Dry etching
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Dry etching
Plasma Etching
Isotropic etching
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GaN‐based ridge waveguides with very smooth and vertical sidewalls are fabricated by combined inductively coupled plasma (ICP) etching and wet chemical etching. The height of GaN waveguide is precisely controlled by ICP dry etching, while smooth and vertical sidewalls are realized by wet chemical etching. Compared with waveguides with rough sidewalls just after ICP etching, the propagation loss of waveguides with wet‐etched smooth sidewalls was reduced by about 2 dB mm −1 at 1.55 µm. Propagation loss can be further reduced by improving the quality of GaN epitaxial layers.
Dry etching
Isotropic etching
Plasma Etching
Waveguide
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In this paper,the wet chemical etching rate of AlGaN in different temperature of KOH aqueous solution was calculated and discussed.It was also found that wet chemical etching after dry etching can effectively eliminate the damage introduced by dry etching process and improve the device performance.The surface morphologies and the compositions of both sets were observed by scanning electron microscopic(SEM),atomic force microscopic(AFM) and Auger electron spectroscopy(AES).The leakage currents of visible-blind devices were compared.It is obvious that dry etching damages and devices leakage current are reduced after wet chemical etching.
Dry etching
Isotropic etching
Auger electron spectroscopy
Wet cleaning
Leakage (economics)
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Since 90 nm process technology node,more and more technical problems appear in plasma dry etching process and the design of the film structures with patterns and the optimization of the process parameters become more and more important.The etching process for the 90 nm polycrystalline silicon gate was developed on the bases of a given layer stack pattern wafer with a hard-mask consisting of oxidation layer,polycrystalline silicon,SiO2 and SiON.After the effects of reaction gases such as Cl2,HBr and O2 on the dry etching were analyzed and the process parameters were optimized,a dry etching process for the requirement of the 90 nm technology node was obtained.
Polycrystalline silicon
Dry etching
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Dry etching using gaseous plasmas is an essential technique in the delineation of ultrafine features required for integrated circuits in today's silicon based technologies. The authors give examples of the use of dry etching and describes a selection of diagnostic tools that are proving useful in elucidating the underlying physics and chemistry of plasma based etching methods.
Dry etching
Plasma Etching
Semiconductor device fabrication
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Previously, plasma-enhanced dry etching has been used to generate three-dimensional GaAs semiconductor structures, however, dry etching induces surface damages that degrade optical properties. Here, we demonstrate the fabrication method forming various types of GaAs microstructures through the combination etching process using the wet-chemical solution. In this method, a gold (Au)-pattern is employed as an etching mask to facilitate not only the typical wet etching but also the metal-assisted chemical etching (MacEtch). High-aspect-ratio, tapered GaAs micropillars are produced by using [HF]:[H2O2]:[EtOH] as an etching solution, and their taper angle can be tuned by changing the molar ratio of the etching solution. In addition, GaAs microholes are formed when UV light is illuminated during the etching process. Since the wet etching process is free of the surface damage compared to the dry etching process, the GaAs microstructures demonstrated to be well formed here are promising for the applications of III–V optoelectronic devices such as solar cells, laser diodes, and photonic crystal devices. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Dry etching
Isotropic etching
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