Erratum to: Gold nanoparticles enhanced photocurrent in nanostructure-based bulk heterojunction solar cell
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Photocurrent
This chapter contains sections titled: Photocurrent Generation and Switching in Neat Semiconductors Photocurrent Switching in MIM Organic Devices Photocurrent Switching in Semiconducting Composites Photocurrent Switching in Surface-Modified Semiconductors References
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Photoelectrochemistry
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Abstract The main aim of this research work is to significantly improve the photocurrent of an ultra-thin silicon solar cell. Here, cylindrical shape cascaded plasmonic nanoparticles are used to design an ultra-thin silicon solar cell. The main idea is to manipulate the absorption spectra of a thin absorber by applying four cascaded cylindrical shape nanoparticles from different materials with different radii and heights. At first, a cell with one nanoparticle at the surface and another one with a nanoparticle at the bottom side are simulated, and their photocurrents are determined. Then, a cell with four cascaded Ag, Al, Ag-Al, and Al-Ag nanoparticles is simulated. The maximum photocurrent density and efficiency of 23.46 mA cm −2 and 13.95%, respectively, are obtained for a cell in which Ag and Al’s nanoparticles are used alternatively from top to bottom. The photocurrent density is 8.2 mA cm −2 for a cell without any nanoparticles. The simulated results show that cascaded nanoparticles significantly enhance the photocurrent. Finally, the generation rate is presented at different wavelengths.
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Plasmonic Nanoparticles
Plasmonic solar cell
Silicon solar cell
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Nanosheet
Linear range
Photoelectrochemistry
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WO3 photoanodes with remarkable photocurrent densities are presented. These photoanodes were prepared from three different commercially available WO3 nanopowders. Doctor blading of the nanopowders followed by a short annealing in air led to nanostructured films. The best photoanode showed a photocurrent density of 3.5 mA cm-2 at 1.23 V vs. RHE in 1 m CH3 SO3 H under AM 1.5 G illumination (100 mW cm-2 ), surpassing values reported so far for bare WO3 photoanodes. The study also showed that the photocurrent was strongly dependent on the electrolyte, indicating oxidation of the electrolyte rather than of water. Oxygen evolution measurements performed in different electrolytes revealed that the amounts of oxygen were highly dependent on the electrolyte. By comparing the photocurrent values in the different electrolytes with the amount of evolving oxygen, it was found that the electrolyte producing the highest photocurrent was the electrolyte with the lowest oxygen evolution. Stability measurements showed that the more oxygen is produced, the less stable is the photoanode. These results clearly underline the difficulty to correlate the photocurrent values with oxygen evolution, drawing the attention to one of the major limitations of photoelectrochemical water splitting.
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The enhancement of photocurrent by gold nanoparticles assembled by DNA is reported.
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In this work, we simulate and optimize the photocurrent densities in a model of an n-p-n-p type thin film multilayer silicon solar cell for space applications. The incident light penetrates the cell perpendicularly to the junctions. The electrodes tailored inside the structure connect the n-layers together and the p-layers together. The equations giving the photocurrent density produced in each abscissa of the structure was developed. We used Matlab software to simulate and optimize the different parameters of the model. The results of simulation show that the optimized n-p-n-p silicon multilayer solar cell could deliver a photocurrent density of more than 46 mA/cm2 under Air Mass 0 (AM0) solar spectrum (solar constant of 1.36 KW/cm2) and that the photocurrent density produced by the n-p-n-p multilayer silicon solar cell is at least 10% higher than the photocurrent density produced by the simple n-p junction solar cell. We also show that the most important components of the total photocurrent densities (94%) is due to the minority carrier collection which happens on both side of the three space charge regions tailored inside the cell.
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The persistent-photocurrent effect in bulk, semi-insulating GaAs has been studied as a function of temperature. The persistent photocurrent is activated by illumination with 1.13-eV light and is preceded by an enhanced photocurrent during long-term illumination after the initial photocurrent has decayed in a quenching process similar to that of the deep donor EL2. Both the magnitude of the persistent photocurrent, and its decay rate are strongly temperature dependent and show significant reduction above 40 K. These results indicate that while the metastable transformation of EL2 is required for the activation of the persistent photocurrent, another unidentified metastable process after this is also required.
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The photoelectrochemistry of α Fe 2O 3 nanocrystalline thin films with different thickness in KCl solution was studied. It is found that the photocurrent response was decreased with the film thinkness. The decrease of photocurrent responses of thicker films is explained in terms of the electric resistance effect and recombination effect. For thinner α Fe 2O 3 film (50 μm) no difference was found for the photocurrent response under frontwall (FW) and backwall (BW) illuminations, while for thicker α Fe 2O 3 film (100 μm) the photocurrent response was larger under BW illumination than that under FW illumination.
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Nanocrystalline material
Photoelectrochemistry
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Charge carrier
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