Comparison of Etching Characteristics of Polymers by 193 nm and 308 nm Excimer Laser Radiation
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In this paper, experimental study of two kinds of typical excimer lasers (XeCl: 308 nm, 30 ns and ArF: 193 nm,17 ns) etching PC, PI, and PMMA is described. The mechanism of excimer laser etching polymer is mainly discussed, and the performances of the two kinds of excimer lasers etching the polymers are compared.Keywords:
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Direct photoetching of various resists and polymers with a 193-nm ArF excimer laser has been demonstrated by imaging a mask through a projection lens. Feature sizes ranging from 2 to 20 μm have been cleanly etched in 1-μm-thick films.
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In this paper, the direct ablation of polymer films of PMMA, PI, PC and K9 glass has been studied at wavelengths of 193 nm and 308 nm. The ablation characteristics of microstructuring is mainly discussed and compared. The ablation qualities of PC, PMMA and K9 glass by XeCl (308 nm, 30 ns) excimer laser are very poor. The ablation performances of PMMA and K9 glass by ArF (193 nm, 17 ns) excimer laser are medium. Smooth surfaces and sharp edges with micron transverse resolution and submicron depth precision can be obtained by the ablation of PI at 308 nm, and PI, PC at 193 nm.
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The surface of a fluoropolymer film was fabricated with micron-sized features by laser-induced backside wet etching (LIBWE), using a nanosecond XeCl excimer laser at 308 nm. The etch rate ranged from 5 to 20 nm/pulse by laser irradiation at fluences varying from 160 to 500 mJ/cm 2 . The threshold fluence for etching was about 100 mJ/cm 2 in the case of a tetrahydrofuran (THF) solution containing pyrene. The mechanism of LIBWE is explained by the formation of superheated liquid in a cyclic multiphotonic absorption process.
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Dry, rapid etching of GaAs has been accomplished using an excimer laser (ArF, 193 nm) with HBr etching gas by photochemical initiation. Spatially uniform etch rates of up to 8 μm/min have been achieved on large-area, masked substrates. Selective crystallographic etching is observed and controlled in the process.
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A dielectric barrier discharge type Xe excimer lamp has been used for etching of some organic materials which can be widely used for opt-electric applications. Using polymethylmetacrylate (PMMA) and polyimidic (PI) resin as samples, they were irradiated at an intensity of 12 mW/cm2. In both cases, etch rates could be varied by changing the species and pressures of gases in the chamber. The maximum etch rates for PMMA and PI were approximately 7 and 10 nm/min, respectively. The etched surface was found to be very smooth compared to the surfaces etched by the ArF excimer laser. Because the excimer lamp produces incoherent radiation, uniform irradiation over a large area without speckling or interference fringe has been obtained. Furthermore, because the peak power of the lamp is significantly lower than that of excimer lasers, effective quantum effects and photochemical effects without thermal effects have been observed. We applied this technique for etching single crystalline organic opt-electric materials such as 1-arginin phosphate monohydrate and 1-histidine tetrafluoroborate.
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Exposure of plasma deposited silicon nitride to 193 nm ArF excimer laser radiation suppresses the etch rate in buffered HF solution by as much as a factor of 50. Using a contact mask, 0.23 μm lines and spaces were transferred into silicon nitride by this exposure and etching technique. The mechanism involves transient thermal annealing induced by the 15 ns laser pulses, which reduces the concentration of NH and SiH groups.
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Photoablation of polymers by laser beams is a practical process for via holes preparation in polymeric insulators. Excimer laser photochemistry of polymers is actively considered for microlithography. The ablation rate is dependent on the absorption coefficient. By addition of a dopant, photoetching rates of polymers can be increased significantly. In the present study the photoetching rates of poly(dimethyl glutarimide) and chlorinated poly(methylstyrene) are studied with pyrene as a dopant with 308 nm of XeCl excimer laser.
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The etching of ceramic PbTi1−xZrxO3 (PZT) by XeCl excimer laser radiation has been investigated. In air, the threshold fluence for etching was about 2 J/cm2. At fluences of 10 J/cm2, etch rates of 0.1 μm/pulse were observed. The geometry of etched structures can readily be defined by choosing suitable experimental conditions, suggesting potential applications of this process to the production of devices.
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