Improving corrosion stability of ZnAlMg by alloying for protection of car bodies
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Galvanic corrosion
Galvanic cell
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This paper concentrates on the possible segregation of indium and gallium and competitive segregation of gallium and indium at atomically flat parallel {111}-oriented Cu-MnO interfaces. The segregation of gallium at Cu-MnO interfaces after introduction of gallium in the copper matrix of internally oxidized Cu-1 at.% Mn could be hardly detected with energy-dispersive spectrometry in a field emission gun transmission electron microscope. After a heat treatment to dissolve indium in the copper matrix, gallium has a weak tendency to segregate, that is 2.5 at.% Ga per monolayer at the interface compared with 2 at.% in the copper matrix. The striking result is that this gallium segregation is observable because it does not occur at the metal side of the interface but in the first two monolayers at the oxide side. Using the same heat treatment as for introducing indium in the sample, but without indium present, gallium segregates strongly at the oxide side of the Cu-MnO interface with a concentration of about 14.3 at.% in each monolayer of the two. In contrast, the presence of gallium has no influence on the segregation of indium towards Cu-MnO interfaces, because the outermost monolayer at the metal side of the interface contains 17.6 at.% In, that is similar to previously found results. This leads to the intriguing conclusions, firstly, that, in contrast with antimony and indium, gallium segregates at the oxide side of the interface and, secondly, that the presence of indium strongly hampers gallium segregation. The results from analytical transmission electron microscopy on gallium segregation are supported by high-resolution transmission electron microscopy observations.
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Abstract Galvanic corrosion (two metal corrosion) on microchip Al bondpads may result in discolored or non-stick bondpad problem. In this paper, a galvanic corrosion case at bondpad edge will be presented. Besides galvanic corrosion (Al-Cu cell), a concept of galvanic corrosion (Al-Ti cell) is proposed, which is used to explain galvanic corrosion at bondpad edge with layers of TiN/Ti/Al metallization structure. A theoretical model of galvanic corrosion (Al-Ti cell) is proposed to explain chemically & physically failure mechanism of galvanic corrosion at bondpad edge. According to the theoretical model proposed in this paper, galvanic corrosion on microchip Al bondpads could be identified into two corrosion models: galvanic corrosion (Al-Cu cell) occurred mostly at the bondpad center and galvanic corrosion (Al-Ti cell) occurred specially at bondpad edge with TiN/Ti/Al metallization structure. In this paper, a theoretical model of galvanic corrosion (Ai-Ti cell) will be detail discussed so as to fully understand failure mechanism of galvanic corrosion the bondpad edge. Moreover possible solutions to eliminate galvanic corrosion (Al-Ti cell) are also discussed.
Galvanic cell
Galvanic corrosion
Galvanic anode
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Liquid metal
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Inivestigations which were made to establish the suitability of the flame photometer for the quantitative determination of indium and thallium are described. For comparison and for the flame photometric determination of gallium, a Uvispek spectrophotometer was used. It was established that the anion perturbation of the emission common for alkaline earths does not occur in gallium, indium, and thallium. (tr-auth)
Thallium
Indium gallium nitride
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The isotope effects of gallium ( 69/71 Ga) and indium ( 113/115 In) have been determined in the system: strong cation exchanger (Dowex 50-X8)/HCl. The sings of gallium and indium effects were opposite, i.e., the heavier isotope of gallium was fractionated into the resin phase, while the heavy isotope of indium was fractionated into the liquid phase. The values of unit separation gains were found to be +3.0 × 10 −5 for gallium and -2.0 × 10 −4 for indium. A possible explanation of the effects is proposed.
Kinetic isotope effect
Isotopes of gallium
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This chapter contains sections titled: Ga Facts about Gallium In Facts about Indium Tl Facts about Thallium The History Behind the Discoveries Thallium (1861) Indium (1863) Gallium (1875) Occurrence Gallium Indium Thallium Manufacture of Metals and Compounds Gallium Indium Thallium Properties and Uses Gallium Indium Thallium Ecological Effects
Thallium
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