AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V
Rui LiYeqing LuGuangle ZhouQingmin LiuSoo Doo ChaeT. VasenWan Sik HwangQin ZhangPatrick FayTom KoselMark A. WisteyHuili Grace XingAlan Seabaugh
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Record high on-current of 78 Keywords:
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ac conductance (G) measurements in the frequency domain are used to monitor the degradation of the inversion layer response in metal-oxide-semiconductor field-effect transistors (MOSFET’s) due to high field stressing. The admittance of the conduction channel of the MOSFET’s is analyzed by use of a transmission line model. The time constant which governs the frequency response of the MOSFET inverted channel is extracted from the peak of the G/ω vs ω curve and is shown to be an important and sensitive parameter for studying the degradation of MOSFET interface properties after high field stressing. Measured data on 9 and 35 nm gate oxide MOSFET’s showed that the channel response degradation by high field stressing depends strongly on the gate oxide thickness.
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We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature.
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In this work, a Diagonal Tunneling Dielectrically Modulated Tunnel Field Effect Transistor (DT-DMTFET) architecture is proposed for label-free bio-sensing application. The performance of this sensor architecture is comprehensively investigated with the help of extensive numerical device simulations. The architecture has been carefully engineered to exploits the diagonal band to band tunneling (BTBT) component in favor of bio-molecule detection. The essential physics of the transduction mechanism for lateral tunneling, vertical tunneling, and diagonal tunneling-based DMTFETs is extensively analyzed from device electrostatics and transport mechanisms. The transduction efficiency of the sensor devices is quantitatively assessed in terms of current sensitivity, where DT-DMTFET exhibits a sensitivity of 3590 compared to 2514 and 1550 observed in lateral tunneling (LT) and vertical tunneling (VT) dominated DMTFETs, respectively. The optimum sensitivity of DT-DMTFET is observed at 4V and 0.4 V gate and drain biases ranges of operation, where the same is observed at a gate bias of 5V and 7V for LT- and VT- DMTFET, respectively. Furthermore, the device design aspects are studied in detail to identify the relevant structural parameters and subsequently optimize the sensing performance of the DT-DMTFET. Finally, an extensive comparative performance study establishes that the DT-DMTFETs offer more than 50% and 100 % improvements in the current sensitivity compared to their lateral and vertical tunneling-based counterparts, respectively, over a range of bio-molecule sample specifications.
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Steep tunnelling junction is a crucial factor in nanometer regime tunnel field effect transistor (TFET) to achieve superior switching characteristics. In this regard, a novel architecture integrating low workfunction live metal strip (LWMS) in bilateral tunnelling based dual gate oxide TFET (BT DGO-TFET) is presented in this manuscript. This incorporation of LWMS results in generation of steep tunnelling junction at the channel source interface, which increases the electron accumulation, and thus boosts the tunnelling generation rate. Hence, the proposed structure accomplishes steep subthreshold swing, boosted ON-state current to OFF-state current ratio and decremented threshold voltage as compared to the conventional BT DGO-TFET. Apart from that, length, position and workfunction of LWMS has been optimized in order to achieve optimum device parameters. Finally, parameters of the proposed architecture have been compared with the parameters of the conventional BT DGO-TFET and TFETs in the existing literature. The proposed device is observed to be highly suitable for analogue/RF and low power switching applications.
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Tunnel Field Effect Transistors are emerging as energy efficient devices as a substitute to conventional Metal Oxide Semiconductor Field Effect Transistor. Like MOSFETs, Tunnel FETs have also been designed using various design geometries and using different channel materials. This work presents the analysis of an GaN based Tunnel Field Effect Transistor. A side wall gated geometry has been simulated to study the characteristics of the device. The device structure has been simulated and analyzed using SILVACO ATLAS. The electrical characteristics of the device have been analyzed with variations in different device parameters, like doping of the drain region and channel length. The device shows a cut off frequency of 0.37 THz which makes it suitable for high frequency applications.
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Tunnel field-effect transistors are promising successors of metal-oxide-semiconductor field-effect transistors because of the absence of short-channel effects and of a subthreshold-slope limit. However, the tunnel devices are ambipolar and, depending on device material properties, they may have low on-currents resulting in low switching speed. The authors have generalized the tunnel field-effect transistor configuration by allowing a shorter gate structure. The proposed device is especially attractive for vertical nanowire-based transistors. As illustrated with device simulations, the authors’ more flexible configuration allows of the reduction of ambipolar behavior, the increase of switching speed, and the decrease of processing complexity.
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The tunnel field-effect transistor (TFET) exploits the band to band tunneling (BTBT) phenomenon for carrier injection and this helps to lower the subthreshold swing <60mV/decade due to the absence of thermal (kT/q) dependence. Tunnel Field Effect Transistor has been evolved by T. Baba in 1992, and p
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Graphene has been identified as one of the convincing materials in the field of device modeling and research. Due to its magnificent electronic properties, Graphene has been extensively studied and analysed as a promising material for RF applications. As device dimensions are scaling down, the performance of conventional Metal Oxide Semiconductor Field Effect Transistor is limited due to short channel effects. A new class of devices called Tunnel Field Effect Transistors have been recognised which have surpassed conventional MOSFETs. Tunnel FETs work on the principle of band to band tunneling and have been a subject of research in the field of semiconductors. Different design geometries and different channel materials have been explored by researchers to enhance the performance of the device. Graphene has been identified as a promising channel material in the design of tunnel field effect transistors. A Graphene TFET has been simulated and analysed in this work for its use in RF applications. The device is studied for various electrical characteristics and small signal parameters are obtained. Cut-off frequency of the device has been calculated. It has been observed that Graphene based Tunnel FETs prove to be excellent candidates for high frequency applications.
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