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    Effect of substrate temperature on the morphology and water vapor transmission property of ZnO film on polymer substrate by plasma enhanced chemical vapor deposition
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    Deposition
    Polymer substrate
    Morphology
    Abstract Rubber is one of the most commonly used industrial materials worldwide. However, there is a gap in the literature on the production of rubber thin films in nanoscale. When the rubber thin films are produced in nanoscale, they can be used in high‐tech applications where bulk rubbers have never been used before. This study is one of the first investigations to focus on the vapor‐based production of the polyisoprene (PI), which is an important member of the synthetic rubber class. For this purpose, a single‐step, rapid and environmentally friendly method based on plasma enhanced chemical vapor deposition (PECVD) was employed to produce PI thin films using 2‐methyl‐1,3‐butadiene (isoprene). The high‐vapor pressure of isoprene makes it a promising monomer for the production of chemical vapor deposition polymers. The effect of plasma processing parameters on the PI deposition rate was investigated. The deposition rate of PI thin film as high as 40 nm/min was achieved and the contact angle of PI coated bamboo surface was found to be 146.8°. The mechanical durability and laundering tests of PI thin films were performed. Based on this study results, PI thin films produced by PECVD can be used in a number of potential applications.
    Isoprene
    Deposition
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    Highly transparent ZnO thin films were grown by chemical vapor deposition (CVD) on glass substrates at various substrate temperatures and sample positions inside the deposition chamber. The optical properties of the films were investigated. Optimized ZnO films have an average transmission in the visible range is about 90% at substrate temperature 500 ºC and the optical energy gap is 3.2 eV. It was also found that the best position of the films inside the chamber is about 16 cm from the inlet side of the gases.
    Deposition
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    This paper reports the effects of the following substrates on the optical, structural and morphological properties of ZnO thin films: Si (100), Si (111), c- and r-sapphire, glass, GaAs and ZnO. The thin films were deposited by low pressure Metal Organic Chemical Vapor Deposition using diethylzinc and tertiary butanol as the zinc and oxygen sources, respectively. X-ray diffraction analysis shows that all the ZnO layers are c-axis orientated. Scanning Electron microscopy reveals similar morphology for all the substrates used, with hexagonal columns having cone shape ends being evident. The photoluminescence spectra are similar, but the various transitions have different relative intensities. It is clear that the different substrates influence neither the orientation of the films, nor the surface morphology, significantly. The photoluminescence hints at larger stacking fault densities in films grown on silicon and glass, however, as evidenced by stronger basal plane stacking fault-related luminescence at ~3.319 eV in the relevant low temperature photoluminescence spectra.
    Stacking fault
    Polymer and diamond like carbon thin films were deposited at temperature below 250°C by high frequency (40−60 MHz) plasma enhanced chemical vapor deposition. The films have been successfully deposited on metal (Ti, Cu, Mo, Ta, Ni, Pt), silicon, germanium, ceramic, quarts and glass flat substrates as well as on 3-D objects: metal balls, washer, tips, cones. Electron field emission, optical and electrical properties, mechanical and tribological behavior of the films were studied in comparison with their structure, phase and chemical composition. Plasma pre-treatment of the substrate, ion bombardment and etching of growing film surface were found to be the key factors of the film deposition process.
    Carbon fibers
    Deposition
    Polymer-like organic thin films (POTFs) were deposited by plasma-enhanced chemical vapor deposition (PECVD) using toluene as the precursor. Refractive indices and extinction coefficients of the POTFs could be varied by changing the plasma power and the deposition temperature, which are easily and continuously controllable deposition parameters.
    Deposition
    Plasma Processing
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