Degradation of silicon nitride glow plugs in electric field-experiments and modeling
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Degradation
SPARK (programming language)
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Degradation
Glow discharge
Redistribution
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The experimental results of glow discharge in microplasma devices are presented. Different constructions of the cathode are investigated. Breakdown voltage as a function of pressure of each cathode structure is recorded and the comparison to Paschen's curve is made. The voltage-current characteristics of each cathode construction are studied with two different background gases and fixed pressures. One microplasma device uses CNTs as the cathode. The hollow structure is achieved by placing a dielectric layer with a center hole over the planar CNTs fabricated on a silicon wafer by the chemical vapor deposition (CVD). The anode is a metal attached to the surface of the dielectric. It is shown that the cathode with CNTs has a lower ignition voltage at the initial stage of breakdown, due to the enhanced field emission characteristics of CNTs. The device is operated in the pressure range of 50 to 750 Torr with DC applied voltage and the results are compared with and without CNT in the hollow cathode structure.
Microplasma
Torr
Dielectric strength
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The field emission properties of SWCNT/graphene hybrid samples were investigated. A transition of electron field emission to glow discharge was measured for high currents, long pulse-on times or high duty cycles with stainless steel anodes. Evidences for this transition were plasma glowing between cathode and anode as well as constant-voltage characteristics where time resolved measurements show an exponentially increasing current. It was observed that no glow discharge occurs with copper or molybdenum anodes. The outgassing of stainless steel is significantly higher due to the low thermal conductivity and the high amount of electron stimulated desorption.
Glow discharge
Outgassing
Thermal desorption
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Two groups of lateral cold emitter triodes have been fabricated. One group consists of triangular-shaped metallic emitters separated several microns from a collector electrode. An extraction electrode is placed close to the tip of the emitter. The second group consists of a tungsten filament emitter that is anchored to the sidewall of a polycrystalline silicon layer. An extraction electrode and a collector complete the device. Initial fabrication of the first group was performed on glass substrates, and testing took place at a pressure of 3-6*10/sup -6/ torr. To decrease potential substrate leakage, subsequent devices have been fabricated on fused silica substrates or on thermally oxidized silicon wafers. To increase electrical performance by decreasing adsorption related arcing, devices are now being tested at a pressure of 8*10/sup -9/ torr.< >
Torr
Getter
Triode
Leakage (economics)
Polycrystalline silicon
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Summary form only given. MicroChannel plasma devices have been fabricated in a single sheet of aluminum foil, ranging in thickness from 100 to 127 Icircfrac14m, by electrochemical processes. Precisely controlled electrochemical processing enables the integration of 200 microchannels in an area as large as 42 cm2. The width and length of each microchannel in the device is ~75 Icircfrac14m and 7 cm, respectively. All the electrodes and interconnects along the microchannels are patterned by standard photolithography, and they are encapsulated by nanoporous AI2O3, acting as the dielectric barrier layer for a capacitive discharge. An entire sheet of aluminum is converted into AI2O3 with the exception of thin aluminum electrodes lying in each barrier rib structure and electrically isolated from each other. Individual electrodes can be driven by applying an external power input between two neighboring electrodes. The capacitance and power consumption of the device are decreased by more than 50% relative to the previously reported 1 2 AI/AI2O3 microplasma devices of the same area. ' MicroChannel plasma devices for AC excitation have been fabricated in various configurations and the discharge properties in Ar, Ne, air, Ne/Xe, and Ar/N2 mixtures have been investigated. The devices show uniform glow discharges confined inside microchannels without dielectric breakdown for a wide range of gas mixtures and pressures. Details concerning the performance of these microplasma sources will be presented.
Microchannel
Microplasma
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The method of deposition of metals oxide and nitride coatings with using of glow discharge electron guns is discussed. Scheme of technological equipment to realising this process is represented and assignment of its major details is described. Technological parameters of elaborated equipment is pointed out. Mathematical model of realised technological process is proposed and obtained results of simulation is discussed and verified with experimental measurements.
Glow discharge
Deposition
Electron gun
Vacuum evaporation
Vacuum deposition
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The operating characteristics of glow-discharge-created electron beams are discussed. Ten different cathode materials are compared with regard to maximum electron beam current achieved and the beam generation efficiency as measured calorimetrically. Specific electron gun designs are presented for a variety of applications that include: cw ion laser excitation; electron beam assisted chemical vapor deposition of microelectronic films; and wide area annealing of ion-implantation damage to silicon substrates. The use of sintered metal-ceramic (e.g., Mo-Al2O3) cathodes to generate multikilowatt electron beams in a pure noble gas discharge is reported. Cathode materials with high secondary electron emission coefficients by ion bombardment allow for electron beam production in glow discharges at 50%–80% generation efficiency values.
Electron gun
Microelectronics
Glow discharge
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Micro Hollow Cathode Discharge (MHCD) arrays, fabricated in silicon with Al
2
O
3
or titanium silicide- coated cathodes, have been investigated for use as high-current, coldcathode electron sources. When arranged as large arrays, micron-scale MHCD's have the potential to be used as electronbeam sources with current densities up into the A-cm
-2
range. Analysis, simulations and experimental data show that a quantum-mechanical tunneling current through the aluminum oxide cathode coating (when made thin enough) allows the DC operation of a MHCD at modest vacuum using Ar. The high secondary-electron emission and low sputter yield, of Al
2
O
3
leads to increases in the plasma electron density and cathode operating lifetimes, respectively. Preliminary data show a significant increase in current density under identical operating conditions, using the alumina dielectric-coated cathodes as compared with bare-silicon baseline cathodes.
Cold cathode
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