Modelo auto-consistente para a cinética da descarga do laser a vapor de cobre
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ambipolar, e à Deus, pois apesar das inúmerasKeywords:
Ambipolar diffusion
We report on investigations of the ambipolar diffusion coefficient in GaAs n-i-p structures in which the electron density in the n channel is varied. The ambipolar diffusion coefficient was determined by time-resolved diffusion experiments of the Shockley–Haynes type. The dependence of the ambipolar diffusion coefficient on the varying carrier density is in excellent agreement with the theory of ambipolar diffusion in n-i-p-i systems. In the investigated sample, the ambipolar diffusion coefficient reaches a maximum value of 16 300 cm2/s. Although the ambipolar diffusion constant declines with decreasing carrier density, it is in a wide range of the carrier density more than two orders of magnitude enhanced compared to bulk materials.
Ambipolar diffusion
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Ambipolar polymer semiconductors and molecular additives (acting as carrier-selective traps) can be solution processed to control ambipolar charge transport capabilities. By selecting materials with appropriate energy level offsets, unipolar n-type or p-type transport can be realized from a single ambipolar polymer. Efficient complementary inverters with high gain are fabricated using this approach.
Ambipolar diffusion
Organic semiconductor
Charge carrier
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Білім берy қоғaмның экономикaлық дaмyының негізі, әлеyметтік тұрaқтылықтың фaкторлaрының бірі, хaлықтың рyхaни-aдaмгершілік әлеyетінің және интеллектyaлдық өсyінің қaйнaр көзі ретінде бaрлық yaқыттaрдa тaптырмaс құндылық болып есептеліп келеді. Aл қaзіргідей aдaм кaпитaлын қaлыптaстырy мен дaмытy мәселесін шешy негізгі міндет ретінде қaрaстырылaтын зaмaндa хaлықтың білімдік қaжеттіліктері өсіп, жоғaры, ортa aрнayлы, кәсіби қосымшa білім aлyғa үміткерлер сaны aртa түсyде. Бұғaн жayaп ретінде білім берy ұйымдaрының сaлaлaнyы aртып, әртүрлі типтегі оқy орындaрының сaны aртyдa, білім берyдің инфрaқұрылымы, бaсқaрy формaлaры, әдістемелік, ғылыми қызмет түрлері дaмyдa. Олaрды білім aлyшылaрдың жеке сұрaныстaры мен мүмкіндіктеріне бaғыттay күшейтілyде. Осығaн орaй білімнің сaпaсынa қойылaтын тaлaптaр aртып, бұл сaлaның әлеyметпен өзaрa әрекеттестігіне негізделген құрылымдық – қызметтік дaмyының көкейтестілігі aртyдa. Мaқaлaдa «серіктестік», «әлеyметтік серіктестік», «білімдегі әлеyметтік серіктестік» ұғым- дaрының мәні aшылып, олaрдың қaлыптaсy және дaмy үрдісіне шолy жaсaлaды, жоғaры оқy орындaрындa педaгогтaрды дaярлayдa әлеyметтік серіктестердің әлеyетін пaйдaлaнyдa бaсшылыққa aлынaтын ұстaнымдaр мен тиімді жолдaры сипaттaлaды. Түйін сөздер: серіктестік, әлеyметтік серіктестік, білімдегі әлеyметтік серіктестік, бірлескен әрекет ұстaнымдaры, әлеуметтік серіктестік әлеуеті. Обрaзовaние является основой экономического рaзвития обществa, одним из фaкторов социaль- ной стaбильности, источником дyховно-нрaвственного потенциaлa и интеллектyaльного ростa людей и во все временa считaлось незaменимой ценностью. И в нaстоящее время, когдa решение проблемы формировaния и рaзвития человеческого кaпитaлa рaссмaтривaется кaк основнaя зaдaчa, рaстyт обрaзовaтельные потребности людей, yвеличивaется количество желaющих полyчить высшее, среднее, специaльное, профессионaльное дополнительное обрaзовaние. В ответ нa это yсиливaется рaзветвленность обрaзовaтельных оргaнизaций, yвеличивaется количество обрaзовaтельных оргaни- зaций рaзличного типa, рaзвивaются инфрaстрyктyрa обрaзовaния, формы yпрaвления, методическaя и нayчнaя деятельность. Yсиливaется их ориентaция нa индивидyaльные потребности и возможности обyчaющихся. В связи с этим повышaются требовaния к кaчествy обрaзовaния, возрaстaет знaчение стрyктyрно-фyнкционaльного рaзвития этой сферы нa основе взaимодействия с обществом. В стaтье рaскрывaется знaчение понятий «пaртнерство», «социaльное пaртнерство», «социaльное пaртнерство в обрaзовaнии», рaссмaтривaется процесс их стaновления и рaзвития, описывaются рyко- водящие принципы и эффективные способы использовaния потенциaлa социaльных пaртнеров в подготовке педaгогических кaдров в высших yчебных зaведениях. Ключевые словa: партнерство, социaльное пaртнерство, социaльное пaртнерство в обрaзовaнии, принципы совместного действия, поненциал социального партнерство. Education is the basis of the economic development of society, one of the factors of social stability, a source of spiritual and moral potential and intellectual growth of people and has always been considered an irreplaceable value. And at the present time, when the solution of the problem of the formation and development of human capital is considered as the main task, the educational needs of people are growing, the number of people wishing to receive higher, secondary, special, professional additional education is increasing. In response to this, the branching of educational organizations is increasing, the number of educational organizations of various types is increasing, the infrastructure of education, forms of management, methodological and scientific activities are developing. Their focus on the individual needs and capabilities of students is increasing. In this regard, the requirements for the quality of education are increasing, the importance of the structural and functional development of this sphere on the basis of interaction with society is increasing. The article reveals the meaning of the concepts of "partnership", "social partnership", "social partnership in education", examines the process of their formation and development, describes the guidelines and effective ways to use the potential of social partners in the training of teachers in higher educational institutions. Keywords: partnership, social partnership, social partnership in education, principles of joint action, the potential of social partnership.
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We report on the ambipolar transport process of photogenerated, spatially separated charge carriers in the doping layers of a $p\ensuremath{-}i\ensuremath{-}n$ diode under the influence of lateral electric fields. By including externally applied electric fields into the theory of ambipolar diffusion of spatially separated electrons and holes, we show that the transport of excess carriers can be described as a combined drift and diffusion process. Compared to the well-known ambipolar transport in bulk material, the ambipolar diffusion process is enhanced by several orders of magnitude, whereas the ambipolar drift can be described by the same ambipolar mobility as in bulk material if the electric fields in both doping layers are identical. One major difference of the ambipolar drift of electrons and holes propagating in different layers in comparison to bulk material is the possibility to control the ambipolar mobility dynamically by changing the dark carrier densities by varying the reverse bias applied to the $p\ensuremath{-}i\ensuremath{-}n$ structure. Most interesting however, is the fact that the ambipolar drift can be controlled by different external fields for electrons and holes. In order to verify the predictions of our theoretical description of the ambipolar transport of spatially separated electrons and holes, we have developed a new pump-and-probe technique that allows for a direct temporally and spatially resolved investigation of the various transport scenarios. The results agree very well with the theoretical simulations.
Ambipolar diffusion
Charge carrier
Electron Mobility
Drift current
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Ambipolar diffusion and the formulation of the equations of continuity for a diffusing cloud of electrons and ions are briefly discussed. A numerical method for the solution of the equations is outlined and the solutions are presented in graphical form. The results indicate that, for concentrations higher than a critical value, electrons and ions diffuse at the same rate and that the major part of the radio echo from a meteor trail will occur under conditions of ambipolar diffusion. However, a sheath of electrons is to be expected surrounding the diffusing cloud. The ratio mobility: diffusion coefficient is shown to be an important parameter in controlling the transition from ambipolar to free diffusion.
Ambipolar diffusion
Free electron model
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This chapter contains sections titled: Introduction Ambipolar Charge-Carrier Transport in Blends of Molecular Hole- and Electron-Conducting Materials Ambipolar Charge-Carrier Transport in Molecular Semiconductors by Applying a Passivated Insulator Surface Electrode Variation for Ambipolar and Bipolar Transport Applications of Bipolar Transport for Ambipolar and Complementary Inverters Realization of Light-Emitting Transistors with Combined Al and TTF-TCNQ Electrodes Conclusion References
Ambipolar diffusion
Charge carrier
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Ambipolar diffusion of electrons and ions in a plasma containing charged dust grains is investigated. As the diffusion is on the ion time scale, the dust distribution remains stationary but the dust charge can vary. An analytical solution showing that the presence of dusts can significantly increase the diffusion length is given. Other solutions of practical interest are obtained numerically.
Ambipolar diffusion
Dusty plasma
Plasma diffusion
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In this paper, in addition to the well-known ambipolar diffusion, ambipolar drift and plasma transport based on the action of the electric field energy are considered. The importance of the mechanisms of ambipolar plasma transport at the formation of a discharge structure in gases of medium and atmospheric pressures using experimental works as an example is demonstrated.
Ambipolar diffusion
Energy transport
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This paper studies the ambipolar diffusion in an electronegative plasma containing electrons, a single species of negative ions and a single species of positive ions. We demonstrate that in a plasma with the concentration of negative ions more than 10 times exceeding that of electrons one has to take into account the mobility of negative and positive ions. We established that in a strongly electronegative plasma (when the ratio of the concentration of negative ions and that of electrons α = n−/ne ≫ 1 and μe ≪ α·μ−, where μe and μ− are the mobilities of electrons and negative ions) the diffusion ceases to be ambipolar, and the coefficients of ambipolar diffusion of the charged particles become approximately equal to their coefficients of free diffusion.
Ambipolar diffusion
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