Sputter-deposited erbium-doped Y2O3 active optical waveguides
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Abstract:
A signal enhancement of 10dB at 1535nm with a low launched pump power of 1 mW at 1480nm is achieved for sputtered Er3+ : Y2O3 channel waveguides on oxidised silicon substrates. With the developed reactive co-sputtering process using sputterguns the erbium concentration can be varied easily and reproducibly.Keywords:
Erbium
Inert
Inert gas
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The SiO2 sputtering yield was determined for 170–300 keV He+ ion bombardment. The low sputtering efficiency and blistering at high ion doses make high-energy He+ ion sputtering yields difficult to determine, but by modifying a measurement method previously used for heavy ions, the sputtering yield could be quite accurately determined after sputtering only 20 Å of SiO2. The sputtering yield was found not to be proportional to the energy deposited by the ion in elastic collisions at the surface of SiO2. Comparison with SiO2 sputtering yields found in literature shows that the sputtering yield increases with increasing energy deposited in electronic excitations for similar energy deposited in elastic collisions, indicating that electronic effects probably have to be included in the description of the sputtering process. Since the electronic effects do not seem to be independent of the sputtering by elastic collisions, it is suggested that SiO2 sputtering be controlled by a mixed collisional-electronic mechanism. Sputtering yield measurements were also performed for varying angles of ion incidence and, here also, good agreement could be achieved with predictions based on a mixed sputtering mechanism.
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Component (thermodynamics)
Transient (computer programming)
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The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2×1019 cm−3 has been successfully demonstrated. Up to a concentration of about 5×1018 cm−3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements indicate that erbium doping gives rise to a trapping level capable of compensating silicon-doped layers. For the first time photoluminescence from a rare earth element incorporated in a III-V semiconductor has been observed at room temperature.
Erbium
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Sputtering yield measurement of Al for N 2 + ion bombardment with different primary energies has revealed that the sputtering yield at a primary energy of 500 eV is nearly zero, whilst the yields for primary energies greater than 1 keV appear to be similar to those for inert gas ion sputtering which has been described well theoretically and by computer simulations. The sputtering yields are negative for primary energies below several hundred eV at the initial stage of sputtering, which indicates that incident ions are trapped in the specimen and collision cascade results in very little sputtering. Computer simulations for these sputtering processes have also been carried out in order to understand the mechanism of sputtering with reactive ions.
Collision cascade
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N doped ZnO thin films were prepared by magnetron sputtering. The effect of bias voltage, N 2 flow and introducing of Al on the behavior of N doping into ZnO films were investigated. The results show that there is little help for N doping into the ZnO films by just adjusting N flow rate because the magnetron sputtering method has a relative weak ability on dissociating the N 2 . The data of co-doping of Al and N into ZnO films revealed that co-doping is an effective way to advance the N doping into ZnO films. The coordination of Al doping and bias voltage could help the N doping effectively.
Cavity magnetron
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New simulation results for the sputtering of lunar soil surface by solar-wind protons and heavy ions will be presented. Previous simulation results showed that the sputtering process has significant effects and plays an important role in changing the surface chemical composition, setting the erosion rate and the sputtering process timescale. In this new work and in light of recent data, we briefly present some theoretical models which have been developed to describe the sputtering process and compare their results with recent calculation to investigate and differentiate the roles and the contributions of potential (or electrodynamic) sputtering from the standard (or kinetic) sputtering.
Regolith
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Abstract The EPD distribution is investigated in silicon‐doped LEC‐grown gallium arsenide crystals, 30 ÷ 40 mm in mainbody diameter and weighing within 300 ÷ 500 grams. The silicon‐doping‐dependent hardening effect, previously observed in S‐doped and Bridgman grown silicon‐doped gallium arsenide is here confirmed. The EPD decreasing with silicon‐doping increase is observed to be less pronounced than in the case of S‐doped and Bridgman grown silicon‐doped samples and possible reasons for this different behaviour are discussed. In any case, a large microprecipitate density together with the EPD reduction appears as a clustering of shallow‐pits around dislocation pits.
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