Fabrication of high-aspect-ratio microgrooves with laser-assisted wet etching for micro heat pipe
1
Citation
3
Reference
10
Related Paper
Citation Trend
Abstract:
Fabrication of high-aspect-ratio microgrooves with good profile and surface quality is realized using laser-assisted wet etching technique for the application to micro heat pipe.Keywords:
Aspect ratio (aeronautics)
Dry etching
Isotropic etching
Dry etching characteristics of Cr films were investigated and some improvements have ben done with magnetically enhanced reactive ion etching (MERIE) system. Clear field patterns and ark field ones exposed on thin EB resists, whose thickness was less than 300 nm, were etched. Although there had been some difficulties in etching of clear-field pattens with SAL-601, these situations were much improved with an appropriate etching condition of magnetic field. It was found that magnetic field intensity affected Cr etching distributions very much. In marked contrast to the above results, MFI condition showed little contributions to the etching distribution of dark field patterns exposed on ZEP- 7000. It was shown that some waveforms of magnetic field could be effective to improve the etching characteristics for the plate whose etching area was extremely small. Etching characteristics for these extremely varied Cr-loaded are considered through the above etching results. Discussions about more useful dry etching process with MERIE system are also described.
Dry etching
Isotropic etching
Cite
Citations (2)
Selective etching is an important step in GaAs process. As the wet－ etching leads to undercut,poor selectivity and unrepeatable etching rate. It is necessary to research the dry etching. Although RIE and MERIE dry etching can be used for selective etching, they can cause serious damage, which affects the performance of devices and MMIC. ICP (inductive couple plasma) is a new method for low damage, high etching rate and high selective etching . In this paper, the selective etching of GaAs/AlGaAs is presented. The etching selectivity ratio of GaAs to AlGaAs is over 840:1 .
Undercut
Dry etching
Plasma Etching
Isotropic etching
Cite
Citations (0)
There are two ways in fabricating grating1 one is wet-etching, the other is dry-etching. In this paper, the two methods will be compared in the last ,we have fabrticated 1st order grating usingdry etching.
Dry etching
Isotropic etching
Cite
Citations (0)
We demonstrated the discharge of XeF2 plasma and investigated the dry etching process of Si using XeF2 plasma. A vertical etching profile and a smooth etched surface, which satisfy the requirements for optical device fabrication, were obtained. The etching rate of Si was 0.7 µm/min at 1 Pa and 100 W. It was found that the RF power dependences of the emission intensities of Xe, F, and XeF were similar to that of the etching rate of Si. The etching rate ratio of Si to SiO2 in the XeF2 plasma etching process was approximately 10, which was much larger than that in the CF4/O2 plasma etching process. We believe that XeF2 plasma etching is a very simple and useful process for Si-based optical devices such as photonic crystals, narrow optical waveguides, and micro-electro-mechanical systems (MEMS) device fabrication.
Dry etching
Plasma Etching
Cite
Citations (11)
For etching of III-nitride materials, reactive ion etching (RIE) methods based on mixture gas such as Ch4/H2 and chloride gases are usually used. Although the etching speed of Cl2-based dry etching is usually higher than that of CH4-based dry etching, CH4-based dry etching is superior to Cl2-based dry etching from the viewpoint of being easier to handle and being less toxic and corrosive.
Dry etching
Electron cyclotron resonance
Cite
Citations (0)
Dry etching
Isotropic etching
Cite
Citations (4)
Low-temperature electron-beam(EB)-assisted dry etching for GaAs is developed to achieve highly anisotropic etching by reducing the side-etching caused by Cl 2 gas etching. An extremely high etching rate ratio (EB-assisted etching/Cl 2 gas etching) is achieved at a substrate temperature of -170°C. The mass spectra of the etching products during EB-assisted dry etching and Cl 2 gas etching are measured. These correlate well with etching rate measurements.
Dry etching
Isotropic etching
Cite
Citations (8)
Dry etching
Aspect ratio (aeronautics)
Plasma Etching
Cite
Citations (28)
When pattern size on the mask is getting smaller, wet etching can not control the CD well enough and it is also difficult to add CD bias by using wet etch, especially at the contact layer. Dry etching process is therefore used to meet these requirements. This paper is to report the problems we have encountered during the development of dry etching process and to introduce a two-step, wet then dry etching process, which we used to solve these problems.
Dry etching
Cite
Citations (1)
Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant polarizations. However, challenges remain regarding their nanofabrication that hinder their applications. The prevailing etching techniques for LNO encompass dry etching, wet etching, and focused-ion-beam etching, each having distinct merits and demerits. Achieving higher etching rates and improved sidewall angles presents a challenge in LNO nanofabrication. Building upon the current etching researches, this study explores various etching methods using instruments capable of generating diverse plasma densities, such as dry etching in reactive ion etching (RIE) and inductively coupled plasma (ICP), proton exchange-enhanced etching, and wet chemical etching following high-temperature reduction treatment, as well as hybrid dry and wet etching. Ultimately, after employing RIE dry etching combined with wet etching, following a high-temperature reduction treatment, an etching rate of 10 nm/min and pretty 90° sidewall angles were achieved. Furthermore, high etching rates of 79 nm/min with steep sidewall angles of 83° were obtained using ICP dry etching. Additionally, using SiO2 masks, a high etching rate of 108 nm/min and an etching selectivity ratio of 0.86:1 were achieved. Distinct etching conditions yielded diverse yet exceptional results, providing multiple processing paths of etching for the versatile application of LNO.
Dry etching
Plasma Etching
Isotropic etching
Cite
Citations (2)