Chemical vapor deposition of a PbSe/CdS/nitrogen-doped TiO2 nanorod array photoelectrode and its band-edge level structure
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Lead selenide (PbSe) is a candidate for harvesting infrared (IR) light, due to its narrow and controllable optical band gap which can be tuned by its grain size. However, there is still a challenge to assemble a photoelectrode with different cations of selenide and sulphide sensitizers, such as PbSe and cadmium sulphide (CdS), onto the same skeleton by a wet chemical route. In this work, we provide a chemical vapor deposition (CVD) method to assemble a PbSe and CdS nanoparticle (NP) co-sensitized nitrogen (N)-doped TiO2 nanorod array (PbSe/CdS/NT) photoelectrode. This hybrid photoanode showed an increased photoelectrochemical (PEC) performance under simulated sun light irradiation. Electrochemical analysis revealed that a presumable cascade structure of band-edge levels, in this photoanode, could be attributed to the enhanced photocurrent. In addition, the carrier multiplication in PbSe NPs via impact ionization, was also suggested to contribute to both the photo and dark current.Keywords:
Nanorod
Photocurrent
Chemical bath deposition
Lead selenide
Selenide
Photoelectrochemistry
Cadmium sulfide
Nanorod
Photocurrent
Tin oxide
Tetragonal crystal system
Cadmium sulfide
Chemical bath deposition
Photoelectrochemistry
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Cadmium sulfide
Chemical bath deposition
Zinc sulfide
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ZnO Nanorods (NRs) is an excellent material for optoelectronic applications. However, ZnO NRs have a wide bandgap. To overcome this problem, ZnO Nanorods has been doped with nickel (0, 3, and 7 at.%) and then coated by a Cu 2 O layer. The ZnO nanorods were first prepared using a hydrothermal method where nickel of varying concentration was added as a dopant. The prepared samples were then coated by Cu 2 O using a Chemical Bath Deposition (CBD) method. The fabricated composites were characterized by XRD to identify the phase compositions, SEM-EDX to determine the morphology and elemental compositions, UV-Vis spectroscopy to determine the bandgap, and photocurrent response test to study the sample's response to light. The XRD reveals that the pristine ZnO and Ni-doped ZnO have the same diffraction patterns but the peaks shift to the right with increasing dopant concentrations. The SEM images of all samples show ZnO NRs grew perpendicular to the substrate while its EDX spectra confirm the presence of Nickel in the Ni-doped samples. The UV-Vis spectra showed that the calculated bandgap decreases from ~ 3.2 to 2.7 eV by increasing nickel dopant concentration and adding Cu 2 O layer. The photocurrent response measurement shows that the ITO/Zn 0.93 Ni 0.07 O/Cu 2 O sample had a good response to light compared to the two other samples.
Nanorod
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Chemical bath deposition
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Chemical bath deposition
Lead selenide
Nanocrystalline material
Deposition
Selenide
Stoichiometry
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Cadmium sulfide (CdS) is a semiconducting absorber for photoelectrochemical (PEC) hydrogen production with suitable electronic band structures. However, it suffers from severe photocorrosion and rapid charge recombination during the desired PEC reactions. Herein, we describe the identification of the optimal junction thickness of CdS/MoS2 core/sheath heterojunction nanostructures by employing atomic layer deposition (ALD) techniques. ALD-grown MoS2 sheath layers with different thicknesses were realized on single-crystalline CdS nanorod (NR) arrays on transparent conducting oxide substrates. We further monitored the resulting solar H2 evolution performance with our heterojunction photoanodes. The results showed that the junction thickness of MoS2 plays a key role in the reduction of photocorrosion and the enhanced photocurrent density by optimizing the charge separation. A better saturation photocurrent (∼46%) was obtained with the 7 nm-thick MoS2@CdS NRs than that with the bare CdS NRs. Moreover, the external quantum efficiency was increased twofold over that of the pristine CdS NRs. The ALD-grown MoS2@CdS heterojunction structures provides an efficient and versatile platform for hydrogen production when combining ALD-grown MoS2 with ideal semiconducting absorbers.
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Cadmium sulfide
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Abstract In this work, un-doped and Manganese doped Zinc Oxide Nanorods (NRs) thin films were grown on the glass substrates using chemical bath deposition method (CBD) at 80 °C temperature. The effect of Mn content (0, 2 and 4%) on the structural, morphology, optical and photoluminescence characteristics of ZnO NRs films was investigated. The XRD patterns of un-doped and Mn-doped ZnO NRs demonstrate sharp and strong peaks together with high crystalline structure. The FESEM images showed that the nanorods of ZnO and Mn:ZnO were well-aligned and distributed throughout the films. The absorption edge was observed to be blue-shifted and the optical energy gap was found to be widening from (3.21, to 3.31) eV with increased Mn content. The photoluminescence spectrum (PL) of Mn-doped samples was examined, at room temperature, and revealed of highly UV emission, whereas the green-yellow wavelengths emissions were enhanced with increased Mn content. Current-voltage (I-V) characteristics showed that the photocurrents of all prepared samples are enhanced and the Mn doped samples showed a good response, under UV light.
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Chemical bath deposition
Absorption edge
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Photocurrent
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Lead selenide
Photoelectrochemistry
Selenide
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The study of the influence of annealing temperature on Lead Selenide (PbSe) thin films deposited on glasssubstrates using chemical bath deposition technique were carried out. The growth of the first group of the films(Set 1: P(9) P while in the second group (Set 2: P(15)), the reaction bath was made up of solutions of lead nitratePb(NO3)2, (PVA), distilled water (H2O), ammonia (NH3), sodium selenosulphite (Na2SeSO3) and Triethalamine[N(CH2CH2OH)], which was used as complexing agent. The deposited materials were identified by X-raydiffraction. In addition, optical and morphological investigations performed revealed the morphological structureof the film. The absorbance of the film for various region of the electromagnetic spectrum was observed. Theoptical absorbance was found to reduce with increase in wavelength. The optical band gap a ranges from 1.26 –2.00eV with sample P(15) having the lowest direct band gap.Keywords: Annealing temperature, Chemical Bath Technique, Lead selenide, thin films, Optical and Solid stateproperties, band gaps, transmittance, wavelength.
Chemical bath deposition
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Lead selenide
Selenide
Lead sulfide
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Chemical bath deposition
Nanocrystalline material
Deposition
Lead selenide
Energy-dispersive X-ray spectroscopy
Zinc selenide
Selenide
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