Simulation study of junction effect on field emission from one-dimensional nanostructure grown on silicon substrate
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In this article, the field-emission properties of the one-dimensional nanostructure grown on doped silicon substrate have been studied via computer simulation. The classical transport equation is used to describe the carrier transport in the material and solved together with Poisson’s equation. The field emission at the emitter-vacuum interface is modeled by the Fowler-Nordheim equation. Our simulation results agree with the experimental results qualitatively. For narrow-band-gap material, the p-type Si substrate will limit the field-emission current in the high applied voltage region. This result can be ascribed to the formation of reverse-biased p-n junction. For wide-band-gap material, however, the p-type Si substrate will enhance the field-emission current, which is attributable to the lower carrier injection barrier height and the stronger driving force offered by the p-type substrate.Keywords:
Poisson's equation
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Quasi-1D α-Fe2O3 nanostructure arrays of four different morphologies (random nanoflakes, random nanobelts, quasi-aligned nanostrips and quasi-aligned nanoneedles) were successfully synthesized via a simple heating process. Field emission measurements indicate that the α-Fe2O3 nanoneedle arrays are superior field emitter exhibiting low turn-on voltage, high current density, and large field-enhancement factor due to better vertical alignment and higher aspect ratio. In addition, we found that adsorbed oxygen molecules greatly hindered the field emission performance of the nanostructures. Prolonged field emission process could drive the oxygen molecules away and give rise to markedly improved and efficient α-Fe2O3 nanostructures field emitter. The improved field emission is attributed to desorption of the oxygen molecules during the field emission process.
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A new kind of non-doping red OLED was fabricated, using partially conjugated PPV as hole-transport material and non-doping DCM as emitter. The new OLED shows good performance of pure red luminescence
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Needlelike silicon field emitter tips having very high aspect ratios can be fabricated by the anodization of silicon optimally designed pn junction on its surface. We have demonstrated the novel field emission device transfer technique for thus fabricating silicon field emitter tip on a glass substrate.[l]
Wedge (geometry)
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Although Fowler and Nordheim developed the basics of field emission nearly one century ago with their introduction of the Fowler-Nordheim equation (FNE), the topic continues to attract research interest particularly with the development of new materials that have been proposed as field emitters. The first order analysis of experiments typically relies upon the FNE for at minimum a basic understand of the physical emission process and its parameters of emission. The three key parameters in the FNE are the work function, emission area, and field enhancement factor, all of which can be difficult to determine under experimental conditions. This paper focuses in particular, on the field enhancement factor β. It is generally understood that β provides an indication of the surface roughness or sharpness of a field emitter cathode. However, in this paper, we experimentally and computationally demonstrate that cathodes with highly similar surface morphologies can manifest quite different field enhancements solely through having different emission regions. This fact can cause one to re-interpret results in which a single sharp emitter is proposed to dominate the emission from a field emitting cathode.
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Transconductance
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The increase in temperature during the operation of an array of Si field emitters fabricated on a glass substrate was investigated. A field emitter having a very high aspect ratio was prepared by the anodization of silicon. The results show that significant Joule heating due to emission current flow takes place at the emitter tip during electron emission, resulting in changes in field emission characteristics and the melting of the apex of the silicon tip when emitters are fabricated on a glass substrate.
Anodizing
Joule (programming language)
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We report field emission from nanometer-sharp tips of polarized PbZr 0.2 Ti 0.8 O 3 (PZT) and silicon. The ferroelectric PZT emitters are a high-density array of single-crystal silicon tips that are coated with a 30 nm thick film of crystalline PZT in a batch fabrication process. The PZT emitter tips begin to emit electrons at fields as low as 2 V/μm and reach threshold emission at fields as low as 3.9 V/μm. This is considerably lower than the threshold field of 7.2 V/μm for uncoated silicon emitter tips. This improvement is about one order of magnitude improvement over previous publications for silicon tips. Using a Fowler-Nordheim analysis, we calculate the effective work function of the PZT film to be 1.00 eV and the field amplification factor to be 1525.
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