The nuclear moment of the indium atom
1
Citation
0
Reference
10
Related Paper
Abstract:
The investigation described here is a continuation of an earlier one carried out by two of the authors in which certain lines in the first spark spectrum of indium were studied and the conclusion drawn that the nuclear moment of that atom was probably ½ h /2π. During the time that elapsed between the completion of this work and its publication there appeared a paper by Jackson describing an examination of certain lines in the arc spectrum which led to an I value of unity. Two of the lines λ4511, λ4102 observed by him had appeared on our plates and been measured by us, the structure recorded in the two cases being quite different. In proceeding with the research it was therefore decided first to revise the work on these lines and then to direct our attention to lines in the ultra-violet region of the arc spectrum. The discharge tube used was very similar to Jackson’s. It was made from quartz and consisted of two wide portions 8 cm. in length and 2·5 cm. in diameter joined by a narrower one 4 cm. in length and 0·8 cm. in diameter. The electrodes were made of sheet copper wrapped around the wide parts of the tube and were coupled inductively to an oscillating circuit with a frequency range of 10,000 to 14,000 cycles. Two U. V. 861 General Electric screen grid radio frequency power amplifier tubes operating in parallel were used. A small amount of indium trichloride (Hilger’s H. S. brand) was introduced into the tube, which was then evacuated. It was usually necessary to heat the tube slightly by means of a bunsen to start the discharge, but once this was done no further heating was necessary.Selective, well controlled and directionally grown Sn doped In2O3 nanowires (In2O3: Sn nanowires, SIO NWs) were synthesized at a low fabrication temperature () through a vapour–liquid–solid (VLS) process under a precise carrier gas flow. The majority of the SIO NWs are grown along [222], with [400] and [440] as minority forming directions, which implies a nearly epitaxial crystal structure. There are fewer physical defects, such as line or planar defects and contaminations, in the SIO NWs than in pure In2O3 nanowires seen through high resolution transmission electron microscopy (HR-TEM) observations. The spectrum of photoluminescence (PL) emission indicates a stable strong blue light peak located at nm with an excited wavelength of 275 nm at room temperature. The Sn dopant in the SIO NWs can enhance the conductivity of the nanowires leading to the lowering of the turn-on electric-field to 0.66 V µm−1 undera current density of up to 1.0 mA cm−2 based on their field emission characteristics. Furthermore, the field emission enhancement coefficient, β, is also increased to 1.48 × 105, which is very close to the carbon nanotube, (CNT) level. SIO NWs fabricated by a VLS process offer a potential application in flat panel displays as demonstrated in this study.
Cite
Citations (53)
We consider two-centre dielectronic transitions occurring in collisions of fast highly charged hydrogen-like projectiles with neutral atomic targets. In such collisions, in addition to the reaction channel due to the two-centre electron–electron interaction, the reaction channel induced by the two-centre electron–nucleus interactions becomes important. We show that the account of distortions of initial and final states of the target caused by the field of the projectile nucleus (which can also be viewed as imposing the Coulomb boundary conditions on these states) leads to an approach in which both these reaction channels are combined in a natural and relatively simple way. As a result, this approach enables one to extend calculations of different cross sections for two-centre dielectronic transitions from the high-velocity to the intermediate-to-high collision velocity regime.
Electron capture
Highly charged ion
Cite
Citations (7)
Figure 4. Contributions of `swaps' to the total charge exchange cross section (a) for kmin initial target states, (b) one swap, (c) three swaps, (d) five swaps and (e) seven swaps.
Rydberg atom
Charge exchange
Electron capture
Cite
Citations (2)
Cite
Citations (2)
ZnO nanowires and nanobelts are two representatives of one-dimensional semiconductor nanomaterials possessing potential applications as optoelectronic and sensor devices. In this study, we applied a vapour-transport-deposition method to synthesize both types of nanostructures using relatively low temperatures (860 °C) by controlling the source materials. We found that the resulting product under similar growth conditions can be switched between [0001]-axial nanowires and -axial nanobelts simply by adding indium to the source. The former appear as ordered vertical arrays of pure ZnO while the latter are belts without spatial ordering. Both represent defect-free single crystals grown via the vapour–liquid–solid mechanism using nanosphere lithography-fabricated catalyst Au templates. Examination of the early growth stage suggests that the dissolution of In into Au influences the nucleation of ZnO at the solid–liquid interface, and subsequently defines the structure and crystallographic orientation of the nanobelts. The optical properties of both nanostructures are studied by photoluminescence and resonant Raman scattering, which indicate consistently that the doped nanobelts have a higher carrier concentration than the nanowires.
Nanomaterials
Deposition
Cite
Citations (101)
Autoionization
Cite
Citations (6)
Cite
Citations (1)
Fully solution‐processed Al‐doped ZnO/silver nanowire (AgNW)/Al‐doped ZnO/ZnO multi‐stacked composite electrodes are introduced as a transparent, conductive window layer for thin‐film solar cells. Unlike conventional sol–gel synthetic pathways, a newly developed combustion reaction‐based sol–gel chemical approach allows dense and uniform composite electrodes at temperatures as low as 200 °C. The resulting composite layer exhibits high transmittance (93.4% at 550 nm) and low sheet resistance (11.3 Ω sq ‐1 ), which are far superior to those of other solution‐processed transparent electrodes and are comparable to their sputtered counterparts. Conductive atomic force microscopy reveals that the multi‐stacked metal‐oxide layers embedded with the AgNWs enhance the photocarrier collection efficiency by broadening the lateral conduction range. This as‐developed composite electrode is successfully applied in Cu(In 1‐ x ,Ga x )S 2 (CIGS) thin‐film solar cells and exhibits a power conversion efficiency of 11.03%. The fully solution‐processed indium‐free composite films demonstrate not only good performance as transparent electrodes but also the potential for applications in various optoelectronic and photovoltaic devices as a cost‐effective and sustainable alternative electrode.
Transparent conducting film
Indium tin oxide
Cite
Citations (190)
Experimental results for the integral cross sections for the emission of Na(3p to 3s) and Na(4p to 3s) light after H+Na collisions at energies from 15 to 1500 eV are reported. The data are compared with model predictions.
Low energy
Cite
Citations (38)
Бұл зерттеужұмысындaКaно моделітурaлы жәнеоғaн қaтыстытолықмәліметберілгенжәнеуниверситетстуденттерінебaғыттaлғaн қолдaнбaлы (кейстік)зерттеужүргізілген.АхметЯссaуи университетініңстуденттеріүшін Кaно моделіқолдaнылғaн, олaрдың жоғaры білімберусaпaсынa қоятынмaңыздытaлaптaры, яғнисaпaлық қaжеттіліктері,олaрдың мaңыздылығытурaлы жәнесaпaлық қaжеттіліктерінеқaтыстыөз университетінқaлaй бaғaлaйтындығытурaлы сұрaқтaр қойылғaн. Осы зерттеудіңмaқсaты АхметЯсaуи университетіндетуризмменеджментіжәнеқaржы бaкaлaвриaт бaғдaрлaмaлaрыныңсaпaсынa қaтыстыстуденттердіңқaжеттіліктерінaнықтaу, студенттердіңқaнaғaттaну, қaнaғaттaнбaу дәрежелерінбелгілеу,білімберусaпaсын aнықтaу мен жетілдіружолдaрын тaлдaу болыптaбылaды. Осы мaқсaтқaжетуүшін, ең aлдыменКaно сaуaлнaмaсы түзіліп,116 студенткеқолдaнылдыжәнебілімберугежәнеоның сaпaсынa қaтыстыстуденттердіңтaлaптaры мен қaжеттіліктерітоптықжұмыстaрaрқылыaнықтaлды. Екіншіден,бұл aнықтaлғaн тaлaптaр мен қaжеттіліктерКaно бaғaлaу кестесіменжіктелді.Осылaйшa, сaпa тaлaптaры төрт сaнaтқa бөлінді:болуытиіс, бір өлшемді,тaртымдыжәнебейтaрaп.Соңындa,қaнaғaттaну мен қaнaғaттaнбaудың мәндеріесептелдіжәнестуденттердіңқaнaғaттaну мен қaнaғaттaнбaу деңгейлерінжоғaрылaту мен төмендетудеосытaлaптaр мен қaжеттіліктердіңрөліaйқын aнықтaлды.Түйінсөздер:сaпa, сaпaлық қaжеттіліктер,білімберусaпaсы, Кaно моделі.
Cite
Citations (0)