Low-temperature synthesis of nanoscale silica multilayers – atomic layer deposition in a test tube
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Herein we demonstrate a simplified, 'poor-man's' form of the Atomic Layer Deposition (ALD) technique to grow uniform silica multilayers onto hydrophilic surfaces at low temperatures, including room temperature (RT). Tetramethoxysilane vapor is used alternately with ammonia vapor as a catalyst, with very common benchtop lab equipment in an ambient environment. This deposition method could be applied in a wide range of fields for growing nanoscale layers of silica from an inexpensive vapor source, without the sophisticated vacuum systems or high temperatures that are generally required for ALD. Conditions for uniform deposition are demonstrated for 20-nm-thick silica shells grown around polymer spheres at RT, and in the interstitial space of a colloidal crystal film. This approach is shown to provide a controlled means of sintering the silica spheres and thereby is an easy way to modify the photonic and mechanical properties of the resulting material. We believe this method has an advantage compared to other more sophisticated methods of ALD and provides a simple technique for broad applications in MEMs, nanoporous structures, sintering of components, cell encapsulation, and organic/inorganic layered composites.Keywords:
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Underlayer의 종류 및 두께가 Al 박막의 texture 및 면저항 변화에 미치는 영향을 연구하였다. Al의 underlayer로는 ionized physical vapor deposition(I-PVD)에 의해 제조된 Ti와 I-PVD Ti 위에 metalorganic chemical vapor deposition(MOCVD)에 의해 제조된 TiN을 적층한 구조가 사용되었으며, 각각에 대해 두께를 변화시키면서 Al 박막의 배향성, 면저항을 조사하고, 400℃, N₂ 분위기에서 열처리하면서 면저항의 변화를 조사하였다. I-PVD Ti만을 Al의 underlayer로 사용한 경우, Ti 두께가 5 ㎚이어도 Al 박막이 우수한 배향성을 나타내었으나, Al-Ti 반응 때문에 열처리 후 Al 배선의 면저항이 크게 상승하였다. I-PVD Ti와 Al 사이에 MOCVD TiN을 적용함에 의해 Al 배향성의 큰 저하없이 Al-Ti 반응에 의한 면저항의 증가를 억제할 수 있었으며, MOCVD TiN의 두께가 4 ㎚ 이하일 때 특히 우수한 Al 배향성을 나타내었다.
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有 nano 规模毛孔尺寸的 Nanoporous 铜被 dealloying Mn-Cu 先锋合金用一个免费腐蚀方法综合。结果的 nanoporous 铜的合金阶段，形态学和作文上的 Mn-Cu 先锋的热处理的效果被调查。作文在体积 Mn-Cu 先锋同类地散布，这被揭示，它因而充分导致更多为形成 nanoporous 铜的 dealloying。从到热的 Cu0.33Mn0.67 的 non-thermally 对待的先锋的 Cu0.49Mn0.51 和 Cu0.21Mn0.79 的合金阶段变化对待合金。在 nanoporous 铜的剩余 Mn 内容从 12.97% ～ 2.04% 被减少(臼齿的部分) 没有并且与 95 h 热处理，用先锋做了。dealloying 准备的 nanoporous 铜的典型毛孔形状没有热处理的先锋被划分成二个不同地区：一致双性人连续的结构地区并且模糊或没有毛孔结构地区。Nanoporous 铜具有用对待热的先锋做的一致像海绵的形态学，并且平均系带直径是 40 nm，比那远小从 non-thermally 对待的先锋，平均系带直径在被估计是大约 70 nm。
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Area-selective atomic layer deposition (ALD) allows the growth of highly uniform thin inorganic films on certain parts of the substrate while preventing the film growth on other parts. Although the selective ALD growth is working well at the micron and submicron scale, it has failed at the nanoscale, especially near the interface where there is growth on one side and no-growth on the other side. The reason is that methods so far solely rely on the chemical modification of the substrate, while neglecting the occurrence of lateral ALD growth at the nanoscale. Here we present a proof-of-concept for blocking the lateral ALD growth also at the nanoscale by combining the chemical surface modification with topographical features. We demonstrate that area-selective ALD of ZnO occurs by applying the diethylzinc/water ALD process on cicada wings that contain a dense array of nanoscopic pillars. The sizes of the features in the inorganic film are down to 25 nm which is, to the best of our knowledge, the smallest obtained by area-selective ALD. Importantly, our concept allows the synthesis of such small features even though the film is multiple times thicker.
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For the application of high-surface-area nanoporous platinum (Pt) to catalytic device, electrodes and sensors, dealloying technique, which can synthesize nanoporous Pt, was combined with surface alloying technique. As a result, nanoporous structure with ligament and pore sizes below 10 nm was successfully fabricated on the Pt plate surface. Cyclic voltammetry in H2SO4 indicated that the nanoporous structure increases the true surface area by 170 times. The approximation by spherical pore model suggested that the nanoporous surface layer has a thickness of 200 nm.
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This work reports the effects of metallic glass precursors on the catalytic performance of nanoporous metals. Pd-based multicomponent nanoporous metals with similar nanoporous structure were successfully fabricated by electrochemically dealloying the Pd20Ni60P17B3 and Pd20Ni20Cu40P17B3 metallic glass precursors at the critical dealloying potentials. It was found that the glassy precursors with different chemical compositions result in different doping elements in the as-obtained nanoporous metals and thus lead to different catalytic activities.
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3D nanoporous graphene shows excellent physics and electrochemical performance in the fields of energy storage and conversion due to its high-quality and unique interconnected structure. Nanoporous metals, especially nanoporous Ni and nanoporous Cu, have high catalysis for the synthesis of high-quality 3D nanoporous graphene. This chapter presents an overview of the most recent research about the 3D nanoporous graphene, heteroatoms-doped nanoporous graphene, and the nanoporous graphene-based composite materials synthesized by using nanoporous Ni and nanoporous Cu.
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