logo
    A Novel Ka-Band Planar Balun Using Microstrip-CPS-Microstrip Transition
    15
    Citation
    14
    Reference
    10
    Related Paper
    Citation Trend
    Abstract:
    In this letter, a novel wideband 180 $^{\circ}$ phase shifter with excellent phase and amplitude balance is presented and a new wideband millimeter-wave planar balun is proposed for the first time. The proposed balun consists of a wideband Wilkinson divider for power splitting followed by two microstrip-coplanar stripline (CPS)-microstrip transitions for broadband 180 $^{\circ}$ phase shift. Good broadband phase and amplitude balance performances are achieved according to the inherent wideband characteristics of the Wilkinson divider and microstrip-CPS-microstrip transition and symmetry of the structure. A new ka-band planar balun has been fabricated and measured. Measured results show that the return loss, isolation, amplitude imbalance, and phase imbalance are better than 10 dB, 14.4 dB, 0.8 dB, and 3.1 $^{\circ}$ , respectively, over the specified frequency range from 26.5 to 40 GHz.
    Keywords:
    Balun
    Wideband
    Phase shift module
    Stripline
    This paper demonstrates a k-band low insertion loss variation phase shifter with over 330° continuously phase tuning range from 21–25GHz in standard 0.18-µm CMOS technology. This phase shifter is composed of a 180 ° continuously phase tuning range reflection type phase shifter (RTPS) and a 180° discrete switch type phase shifter (STPS). The measured phase shift range is 336° with low loss variation of 1.3dB at 22GHz and the maximum insertion loss is 16 dB at 22GHz. To the best of authors' knowledge, the MMIC is the lowest insertion loss variation phase shifter in CMOS technology at 22GHz.
    Phase shift module
    Process Variation
    Citations (11)
    We present the development of a multilayered Marchand balun that operates over a 4-20 GHz bandwidth. The balun achieves a measured insertion loss of less than 0.5 dB from 4 to 17 GHz, and less than 0.7 dB from 17 to 20 GHz. Measured amplitude and phase imbalances are less than 0.5 dB and 5°, respectively within 4-20 GHz. The balun design employs a novel twin dielectric thin-film thickness structure to achieve a low insertion loss and a wide bandwidth.
    Balun
    Dielectric loss
    Return loss
    Fractional bandwidth
    The paper presents study of the tunable phase shifter performance limits. The study derives dependence of specific phase shift and insertion loss on combination of material properties and device dimensions. Condition of maximum possible phase shift and minimum possible insertion loss is defined.
    Phase shift module
    Waveguide
    On-chip baluns are widely used in RF and Millimeter-Wave circuit. How to reduce the insertion loss is the key issue for balun designs. Meanwhile, an accurate compact model for balun is highly demanded. In this work, the Patterned Ground Shields and Parallel Metal Layer techniques are used to reduce the insertion loss of the balun. The compact model and corresponding extraction techniques are also presented. Experimental results show that the insertion loss of the fabricated balun is about 1.4db and the proposed compact model can describe it up to 30GHz accurately.
    Balun
    Extremely high frequency
    Shields
    This paper presents a 28 GHz low insertion loss variation 4-bit phase shifter which cover 360° phase. The phase shifter is implemented using 28-nm CMOS process. The phase shifter is based on switched delay type phase shifter topology. In order to reduce the insertion loss imbalance, it is designed so that resonance admittance that caused by shunt inductor and parasitic capacitance of off state shunt switching transistor is the same as on resistance of shunt switching transistor. The Fabricated 4-bit phase shifter has 10.1° RMS phase error and 0.78 dB RMS insertion loss at the center frequency. The lowest RMS phase error is 6.4° at 25 GHz and the lowest RMS insertion loss error is 0.18 dB at 30 GHz. The measured insertion loss is 11.7 ± 2.4dB from 28 to 31 GHz over all 16 states.
    Phase shift module
    4-bit
    Return loss
    We present a new LTCC stripline (SL) structured 60 GHz bandpass filter (BPF) composed of transitions to CPW pads for MMIC integration. The possible loss through the SL-CPW transition has been minimized by adopting air-cavities below the via and by gradual approaching the height of the ground planes. The fabricated transition reveals an insertion loss of 1.6dB and a S11/S22 below -20dB at the pass band of the filter. The dual-mode four-pole BPF shows a center frequency of 60.4GHz, 3.5% bandwidth, and S11/S22 below -15dB at the pass band. Excluding the insertion loss of the transitions, the filter insertion loss reveals 3.67dB.
    Stripline
    Center frequency
    Fractional bandwidth
    Abstract A 3.5 GHz low insertion loss variation phase shifter has been designed and fabricated on standard 0.18‐μm CMOS process. To achieve over 360° continuously phase tuning range, the phase shifter consists of a switch type phase shifter (STPS) and a reflection type phase shifter (RTPS). The phase‐invertible variable attenuator (PIVA) topology which can provide two states with 180° phase‐shift while maintaining low amplitude imbalance is adopted. The RTPS provides over 189° continuously phase tuning. The experimental results show that the 3.5 GHz phase shifter demonstrates over 360° continuously phase tuning range with low insertion loss variation of 1 dB at 3.5 GHz. The maximum insertion loss is 13.5 dB at 3.5 GHz and the dc consumption is zero. The chip size is 1.08 mm × 0.82 mm.
    Phase shift module
    Attenuator (electronics)
    Citations (0)
    This work designs balun filters with high frequency selectivity and low insertion loss. A symmetrical doubly loaded output structure was constructed to obtain balanced outputs and create a pair of transmission zeros. The stacked cross-coupled structure was further applied for obtaining compactness and creating two more pairs of transmission zeros. A compact fourth-order balun filter was fabricated. Measured results demonstrate an excellent phase difference of 180°± 3.2°, an amplitude imbalance of 0.8 dB, and a low insertion loss of 1.3 dB at 2.45 GHz. High-selectivity responses with three pairs of transmission zeros were observed.
    Balun
    Frequency selectivity
    This paper presents a 60-GHz low-loss compact 4-b phase shifter in a 65-nm CMOS. It is based on a 1-b high-pass/low-pass structure and a 3-b switched-filter structure, and employs fully custom-designed capacitors with a high quality factor for low insertion loss. The phase shifter with custom-designed capacitors reduces an insertion loss by 2.6 dB at 60 GHz. The average insertion loss is 8.1 dB at 60 GHz, and the return loss is better than 10.6 dB over a range of 57-66 GHz. The measured 16-output state of the fabricated phase shifter has a phase resolution of 22.5° with an rms phase error less than 5.5° over the 57-66 GHz range. The fabricated phase shifter has a compact core size of 0.42 mm × 0.22 mm. To the best of our knowledge, this phase shifter achieves the lowest insertion loss and the smallest core area of all the published 60-GHz 360° -coverage passive CMOS phase shifters.
    Phase shift module
    Return loss
    Citations (36)
    This paper presents an integrated balun design optimized for low insertion loss and minimal imbalance. The concept of an integrated dual-band balun is proposed to significantly improve the integration and reliability of WLAN a/b/g transceivers. The design has been implemented in standard 90nm CMOS technology. The measured minimum insertion loss (ILmin) is 1.6 dB in the 2.4 GHz band, and 1.2 dB at 5∼6 GHz The measured phase imbalance is less than 0.4°, and the amplitude imbalance is below 0.1 dB, in both frequency bands. Attributed to its symmetry, the balun yields more than 40 dB attenuation of undesired mode conversions. The balun core occupies 220μm × 220μm, and has the lowest measured insertion loss reported to date for integrated baluns in standard CMOS.
    Balun
    Transceiver
    Return loss
    Multi-band device