Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

Yonghai Chen Chenguang Tang Bo Xu Peng Jin Zhanguo Wang

Citation

Reference

Related Paper

Abstract:

The wetting layers (WL) in InAs/GaAs quantum-dot system have been studied by reflectance difference spectroscopy (RDS), in which two structures related to the heavy-hole (HH) and light-hole (LH) transitions in the WL have been observed. The evolution and segregation behaviors of WL during Stranski-Krastanow (SK) growth mode have been studied from the analysis of the WL-related optical transition energies. It has been found that the segregation coefficient of Indium atoms varies linearly with the InAs amount in WL. In addition, the effect of the growth temperature on the critical thickness for InAs island formation has also been studied. The critical thickness defined by the appearance of InAs dots, which is determined by AFM, shows a complex variation with the growth temperature. However, the critical thickness determined by RDS is almost constant in the range of 510-540°C.

Keywords:

Wetting layer

Indium arsenide

Topics:

Semiconductor Quantum Structures and Devices

Advanced Semiconductor Detectors and Materials

Quantum Dots Synthesis And Properties

10.1109/icsict.2008.4734643

Cite

Ultrafast Carrier Dynamics of Bulk Indium Gallium Arsenide, Low-Temperature Grown Indium Gallium Arsenide, and Mqw Indium Gallium Arsenide

Bradford C. Tousley

Indium arsenide

Indium gallium arsenide

Arsenide

Source

Cite

Citations (0)

Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm

Steven T. Johns

Indium arsenide

Arsenide

Indium gallium arsenide

Indium phosphide

Source

Cite

Citations (0)

Running Droplets of Gallium from Evaporation of Gallium Arsenide

Science (2009)

J. Tersoff D. E. Jesson W. X. Tang

High-temperature annealing of gallium arsenide in vacuum causes excess evaporation of arsenic, with accumulation of gallium as liquid droplets on the surface. Using real-time in situ surface electron microscopy, we found that these droplets spontaneously run across the crystal surface. Running droplets have been seen in many systems, but they typically require special surface preparation or gradient forces. In contrast, we show that noncongruent evaporation automatically provides a driving force for running droplets. The motion is predicted and observed to slow and stop near a characteristic temperature, with the speed increasing both below and above this temperature. The same behavior is expected to occur during the evaporation of similar III-V semiconductors such as indium arsenide.

Indium arsenide

10.1126/science.1169546

Cite

Citations (147)

Self-assembled indium(aluminum,gallium)arsenide/gallium(aluminum)arsenide quantum dots for intersubband detectors.

Deep Blue (University of Michigan) (1998)

Jamie Phillips

Indium arsenide

Indium gallium arsenide

Source

Cite

Citations (0)