Bipolar integrated Kelvin test structure for contact resistance measurement of self-aligned implantations
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Abstract:
A Kelvin contact resistance test structure has been developed for accurate measurement of highly-doped, shallow n/sup +/ and p/sup +/ implantations, which are self-aligned to the contact window. Here the structure has been integrated, without additional processing, in a 30 GHz washed-emitter-base n-p-n bipolar process, for the purpose of monitoring the emitter contact resistance. Diffusion taps to the emitter have been made with the phosphorus collector-plug implantation. Phosphorus evaporation from the contact window during the anneal step and the low sheet resistance of the collector-plug implantation, together with the overall design of the test structure, assure a very accurate determination of the emitter contact resistance even in situations where complete junction isolation of the diffusion taps is not directly possible. Results are presented for the optimization of the emitter anneal cycle with respect to the emitter contact resistance.Keywords:
Contact resistance
Spreading resistance profiling
Electrical contacts
Contacts are a key component of most modern electrical and electronic systems, they are found in connectors, switches and relays. Recently it has been proposed the usage of new composite materials in contacts; this demands the study and characterization of these materials to assess their performance. From the electrical perspective, the most important aspect is the resistance and its variations due to mechanical and chemical phenomena. The measurement of contact resistance carries some challenges due to the low values to be measured and the limitations imposed by dry circuit testing. In this article, we present a setup suitable for making low resistance measurements as those found on electrical contacts.
Contact resistance
Electrical contacts
Characterization
Component (thermodynamics)
Electronic component
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Characterisation of electrical contacts intended for use with nonconductive adhesives has been performed. The impressions made in the contact area are shown to be dependent on the contact force, and on the surface preparation. At very low contact forces, the presence of insulating oxide layers on the metal surfaces increase the contact resistance dramatically. However, as the contact force is increased, the contact resistance drops rapidly.
Contact resistance
Electrical contacts
Contact area
Contact force
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The paper reviews the problems of measurement of sheet resistance of ultrathin high-resistance layers of organic semiconductors and the essential underlying problems. Particular attention is paid to potential influence of the resistance of contact regions on the results of direct measurement of sheet resistance of stripe-shaped layers. In this connection, we present a methodology of double length stripe resistance measurement (DLSRM), used above all to minimise the influence of contact regions on the measurement results. We deduce theoretical as well as practical possibilities of DLSRM in the diagnostics and quantitative characterisation of unsuitable or even faulty contacts on high-resistance layers. The application efficiency of the DLSRM method is documented by the results of sheet resistance measurement on zinc phthalocyanine with cathode sputtered planar contacts of noble metals (gold, platinum, or palladium). As expected, gold is the best contact material, but even in its application one cannot neglect the influence of contact regions. The presented method is universal and generally applicable to all materials where sheet resistance is the relevant parameter, and its assessment is based on measurements of the layer resistance in stripe arrangement.
Contact resistance
Spreading resistance profiling
Electrical contacts
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Transmission electron microscopic examination (TEM) on VLSI process device is presented. Local step coverage and non-uniformity on silicidation has induced high sheet resistance and high contact resistance problems. Native oxide within submicron contacts also increases contact resistivity.
Contact resistance
Electrical contacts
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Spreading resistance profiling
Rutherford backscattering spectrometry
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Electrical contact resistance is of critical importance in resistance welding and depends on pressure, temperature, surface condition and steel grade. In this paper we present the experimental investigations on the contact electrical resistance with two distinct techniques for different pressures and temperatures and on different types of contacts (electrode-metallic sheet or metallic sheet metallic sheet).
Contact resistance
Electrical contacts
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Electric motor used in an electrical vehicle commonly operated under high direct current of several hundred amperes. In such condition conductor contacts are very critical. Bad contacts may result in losses, overheating and disturb the operation of the motor. The improvement of contact can be achieved by reducing the contact resistance. This paper reports investigation results on the effects of silver and nickel coating on the contact surface in improving the contact performance in copper conductors. The effect of the pressure on the contact was also investigated. The current used in the investigation is direct current with magnitude of up to 350 A. The measured parameter was contact resistance. Contact resistance was measured using micro ohmmeter. The investigation results indicated significant improvement of conductor contact performance by applying the silver and nickel coating on the contact surfaces. The contact resistance reduced from 10.6 μΩ for uncoated contact to 9.5 μΩ for nickel coated and to 5 μΩ for silver coated contact.
Contact resistance
Electrical contacts
Overheating (electricity)
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High-dose ion implantation of phosphorus into 4H–SiC has been investigated. Phosphorus ion implantation with a 1×1016 cm−2 dose at 800 °C into 4H–SiC (0001) has resulted in a sheet resistance of 80 Ω/□ after annealing at 1700 °C. A similar sheet resistance of 110 Ω/□ was achieved even by room-temperature implantation when 4H–SiC (112̄0) was employed, owing to excellent recrystallization of this face revealed by Rutherford backscattering channeling spectroscopy. The sheet resistance could be further reduced down to 27 Ω/□ by 800 °C implantation into 4H–SiC (112̄0) followed by annealing at 1700 °C. 4H–SiC (112̄0) showed a very flat surface after annealing.
Recrystallization (geology)
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A test facility was developed for directly measuring the electrical contact resistance of switch gear contacts of real sizes under different environmental conditions and contact pressures. It can measure contact resistance to an order of one-tenth of a μΩ. It sources a constant current in the order of mA and hence avoids initial arcing across contacts. Experiments were conducted on brass–brass samples with different contact pressures and the results are in agreement with published theoretical calculations.
Brass
Electrical contacts
Contact resistance
Electric arc
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