Room-temperature CW operation of GaAs-AlGaAs diode lasers on silicon-on-insulator wafers
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GaAs-AlGaAs diode lasers have been fabricated on silicon-on-insulator wafers for the first time. Gain-guided graded-index separate-confinement heterostructure single-quantum-well (GRINSCH-SQW) lasers operated CW at room temperature with threshold current as low as 43 mA, differential quantum efficiency as high as 54%, and output power of more than 60 mW/facet. One device operated CW for 75 min at an output power of 1 mW/facet.< Keywords:
Facet (psychology)
Laser diode
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Abstract Das photoelektrochemische Verhalten von Methylviologen (MV2" = N,N′‐Dimethyl‐4,4′‐bipyridinium) an p‐ und n‐leitenden GaAs‐Elektroden in wäßrigen Lösungen wird untersucht.
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It is well known that a semiconductor laser diode with optical feedback can show both stable (CW) and unstable (chaotic) modes of behavior. The optical output is governed by three different parameters, namely the injection current, feedback strength and optical feedback delay time. In this work, we present a detailed numerical study of the route to chaos as the feedback strength is varied for a laser diode having arbitrary injection current and external cavity length. The results are presented as a 3D phase diagram where the x-and y-axes correspond to the injection current and optical feedback delay time and the z-axis to feedback strength. This allows a global study of the route to chaos and extends the 2D results obtained by arbitrarily fixing one parameter and allowing the two other to vary.
Optical chaos
Laser diode
Feedback loop
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Presents a set of typology of characteristics for Speciators to various facets namely Basic facet, Personality facet, Property facet, Energy facet, Space facet and Time facet for use in the construction of coextensive class numbers according to Colon Classification. The application of typology Is. illustrated with examples from depth schedules for different fields of knowledge.
Facet (psychology)
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Abstract A new method has been proposed to evaluate bulk (crystal) and facet degradation in semiconductor lasers separately by cleaving the degraded laser diodes into three regions along a resonator direction. By applying the method to AlGalnP visible light laser diodes, it has been demonstrated that it is possible to evaluate the changes in facet reflectivity and the effects of bulk and facet degradation on performance characteristics of as‐cleaved laser diodes as well as laser diodes with antirefiection and high‐reflection (AR‐HR) facet coating.
Facet (psychology)
Degradation
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Indium arsenide
Indium gallium arsenide
Arsenide
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This chapter contains sections titled: Gallium Arsenide Technology and ESD Gallium Arsenide Energy-to-Failure and Power-to-Failure Gallium Arsenide ESD Failures in Active and Passive Elements Gallium Arsenide HBT Devices and ESD Gallium Arsenide HBT-Based Passive Elements Gallium Arsenide Technology Table of Failure Mechanisms Indium Gallium Arsenide and ESD Indium Phosphide (InP) and ESD Summary and Closing Comments Problems References
Indium arsenide
Heterojunction bipolar transistor
Arsenide
Indium gallium arsenide
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We tested predicted relationships (Widiger, 1993; Widiger, Trull, Clarkin, Sanderson, & Costa, 1994) between personality disorder scores and facets of the five-factor model, and evaluated the relative benefits of facet-level analyses over domain-level analyses. Data from 614 undergraduates indicated: (a) 63% of the predicted facet relationships were significant, although many unpredicted relationships also emerged; (b) facet-level analyses did not yield substantially stronger effect sizes than domain-level analyses; but (c) facet-level analyses provided much better discrimination between personality disorders than domain-level analyses. Facets of the openness to experience domain also helped discriminate between personality disorders, which is in contrast to previous domain-level findings that openness is not important.
Facet (psychology)
Openness to experience
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Semiconductor laser diodes can be altered to behave chaotically by imposing some sorts of nonlinearity such as an external optical injection. The operating parameters that control this behavior are the injection current, the injection level and the angular frequency detuning between the laser diode and the optical injected signal. In this work, we numerically study the effect of the variation of these operating parameters on the route to chaos. The results are illustrated in 3D phase diagram where the three axes (x.y.z) are the injection current, the frequency detuning and the injection level, respectively. Therefore, this phase diagram presents a map that can be used to select the required output of a semiconductor laser diode subjected to an external optical injection according to the required application.
Laser diode
SIGNAL (programming language)
Semiconductor optical gain
Injection locking
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Facet (psychology)
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In this work we present circuit models of semiconductor laser diode arrays. The models are based on the two lateral coupled laser rate equations. The circuit obtained and the small signal analysis results are discussed.
Laser diode
SIGNAL (programming language)
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