Physical Description of the Mixed-Mode Degradation Mechanism for High Performance Bipolar Transistors
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The authors study the mixed-mode stress regime for bipolar transistors. From Monte Carlo simulations it was found that high-energy avalanche generated holes dominate the degradation and the energy dependence of the hot carriers on the device degradation was experimentally investigated including the pinch-in effectKeywords:
Degradation
Mode (computer interface)
This paper presents an overview of two degradation modes of PV panels: the Moisture Induced Degradation and the Cell Cracks. The two mentioned degradation modes affect PV cells differently according to their position in the module. At a previous stage, we have build a PV model that takes into consideration three degradation modes, the Potential Induced Degradation, the Light Induced Degradation, and the Ultraviolet Light Degradation. In this paper, we update our model to take into consideration all degradation modes.
Degradation
Position (finance)
Ultraviolet
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We studied bipolar junction transistors. We will see that the bipolar junction transistor, often referred to by its short name, transistor, actually functions as a current-controlled current source. We will also see that in the current generation of bipolar junction transistors, both majority and minority carriers are involved. For this reason, they gave this name to this type of transistor. In order to get enough information about this part, in the first two parts we will examine the construction and working method of the transistor. After that, we dedicate sections to how the transistor is placed in different combinations and the characteristics of the transistor in each combination.
Heterostructure-emitter bipolar transistor
Multiple-emitter transistor
Bipolar transistor biasing
Static induction transistor
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본 논문은 반복 펄스에 의한 NPN BJT (Bipolar Junction Transistor)의 피해 효과를 알아보았다. 1 ns의 상승시간과 최대전압 2 kV인 펄스 발생장치를 사용하여 주입하였다. 트랜지스터의 베이스에 펄스를 주입하여 실험을 진행하였다. 펄스주입에 의해 파괴된 트랜지스터는 베이스전원 미인가 시에도 전류가 흐르는 현상이 발생하였다. 트랜지스터의 파괴 원인은 과전류에 의한 열적파괴이다. 트랜지스터가 파괴되기 시작하는 전압은 단일펄스의 경우 975 V이고, 반복 펄스에서는 525~575 V이다. 펄스의 반복률이 증가할수록 DT (Destruction Threshold)가 감소하는 것을 확인할 수 있었다. 또한 펄스의 반복률이 높을수록 트랜지스터 파괴의 정도가 더 심하였다.
Heterostructure-emitter bipolar transistor
Bipolar transistor biasing
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In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×10 11 , 1×10 12 and 1×10 13 cm -2 , respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10 -15 cm 2 , which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.
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SiC BJT with varying emitter width were investigated by numerical simulations as well as experiments. Emitter size effects (ESEs) are demonstrated in today's SiC BJT by comparing the characterization of BJT with different emitter width. Surface recombination current is found to be comparable with published result for heterojunction bipolar transistors (HBTs). In SiC BJT design, this effect has to be considered. A good surface passivation is required to reduce the effect of surface recombination on the current gain
Passivation
Heterojunction bipolar transistor
Heterostructure-emitter bipolar transistor
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A new 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination structure: SSR-BJT has been proposed to improve the common emitter current gain which is one of the main issues for 4H-SiC BJTs. A Lightly Doped N-type layer (LDN-layer) between the emitter and base layers, and a High Resistive P-type region (HRP-region) formed between the emitter mesa edge and the base contact region were employed in the SSR-BJT. A fabricated SSR-BJT showed a maximum current gain of 134 at room temperature with a specific on-resistance of 3.2 mΩcm2 and a blocking voltage VCEO of 950 V. The SSR-BJT kept a current gain of 60 at 250°C with a specific on-resistance of 8 mΩcm2. To our knowledge, these current gains are the highest among 4H-SiC BJTs with a blocking voltage VCEO more than about 1000 V which have been ever reported.
Heterostructure-emitter bipolar transistor
Resistive touchscreen
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The development of the Monte Carlo technique for the calculation of the thermoluminescence (TL) intensity and the thermally stimulated conductivity (TSC) is described. The rationale for the development of the Monte Carlo technique for this purpose is first explained. The various investigations carried out during the development of the technique with reference to a simple model, and their results are then reported. The investigations include the modifications needed in the Monte Carlo technique, the time required for calculations, the statistical error and comparison with other methods. The procedures for extending the Monte Carlo method to complicated models are also described. It is concluded that the Monte Carlo method is simple, straightforward and versatile, and provides exact results in all cases, without any simplifying assumptions, within reasonable computer time. In some cases, the Monte Carlo method may be the only feasible method for the exact calculations of the TL intensity and the TSC.
Intensity
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Abstract The current study utilises Monte Carlo simulation and Mie scattering theory to estimate the reflectance spectra of fabric coated with titanium dioxide nanopigments of various diameters and concentrations. Image processing was carried out and experimental data were gathered to evaluate the performance of Monte Carlo simulation. The distribution and location of the nanopigments on the surface of fabric were determined using the Monte Carlo method. Reflection of the fabric was calculated based on Monte Carlo simulation with the partitive mixing method and Mie theory. According to the experimental and simulation results, the reflectance of coated samples was increased by increasing the concentration and number of titanium dioxide nanoparticles. There was a good match between the results obtained by Monte Carlo simulation and the experimental results. For coated samples (dTiO 2 : 500 nm), the root mean square error between measured and predicted reflectance by the Monte Carlo and partitive mixing method and by Monte Carlo and Mie theory was 0.022 and 0.0078, respectively. The results indicate that the performance of the Monte Carlo and Mie method was better than that of the Monte Carlo and partitive mixing method. According to t ‐test analysis, there was no statistically significant difference between the experimental data and Monte Carlo simulation.
Titanium Dioxide
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VES-BJT is a bipolar transistor fabricated in the VESTIC technology. Its physical structure differs from other state-of-the-art bipolar transistors: its emitter and collector junctions are not plane-parallel, its base is uniformly doped and the emitter and collector regions are identical. In this paper it is shown how to estimate theoretically the most important parameters of its compact model. Comparison with results of numerical simulation is included, advantages and shortcomings of VES-BJT are discussed.
Heterostructure-emitter bipolar transistor
Base (topology)
Heterojunction bipolar transistor
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