Memory applications based on ferroelectric and high-permittivity dielectric thin films
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Keywords:
Tantalate
Lead zirconate titanate
Non-Volatile Memory
Ferroelectric RAM
Strontium titanate
Zirconate
The hydrothermal method to deposit lead zirconate titanate (PZT) thin film is a new method reported by Tsurumi et al. . in 1991. This method consists of two linked processes. We have found that the film deposited by the first process is not PZT but separated lead zirconate (PZ) and lead titanate (PT). In this paper, we report that a PZT thin film was successfully deposited by a single process. The chemical construction and composition of the film were analyzed. The Zr/(Zr+Ti) ratio of the PZT film was controlled by changing the ionic composition of the solution.
Lead zirconate titanate
Zirconate
Lead titanate
Lead (geology)
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Abstract The effect of poling field on the d33 aging rate at 25 and 200°C of a strontium modified lead zirconate titanate is presented.
Poling
Lead zirconate titanate
Strontium titanate
Zirconate
Lead (geology)
Lead titanate
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Group-II Hafnate, Zirconate, and Tantalate High-k Dielectrics for MIM Applications: The Defect Issue
We discuss the role of defects in metal oxides (mostly in strontium hafnate, barium hafnate and barium zirconate). The discussion is based on macroscopic and microscopic (C-AFM) electrical meas-urements, ab initio calculations for formation energies and elec-tronic structure of defects, numerical simulations of trap-assisted leakage, and on additional data provided by SIMS and X-ray tech-niques. We argue that moisture may be a hazardous contaminant.
Tantalate
Zirconate
Barium
Leakage (economics)
High-κ dielectric
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Abstract Field dependence of strain and longitudinal piezomodul as well the temperature dependence of permittivity are measured on lead zirconate ceramics in the vicinity of intermediate phase. With respect, to the intermediate phase the ferroelectric nature is proved. Large electromechanical strain and the anmalous piezoeffect allows some conclusions on the appearance and mechanism of two different field induced phase transitions. Finally it was possible to separate two mechanisms, which cause the anomalous piezoeffect.
Lead zirconate titanate
Zirconate
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Lead zirconate titanate
Zirconate
Lead titanate
Lead (geology)
Lead oxide
Calcium titanate
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Magnetoelectric CoFe2O4-PZT (lead zirconate titanate) films as thick as 1μm have been prepared by spin coating using a PZT sol-gel solution containing polyvinylpyrrolidone and CoFe2O4 powder. X-ray diffraction result reveals that there exists no chemical reaction or phase diffusion between the CoFe2O4 and PZT phases. The scanning electron microscopy observation confirms that the composite thick film is crack-free and has a well-defined microstructure. The composite thick films exhibit good magnetic and ferroelectric properties, as well as distinct magnetoelectric coupling behavior. The magnetoelectric coupling mechanism for the present composite thick film is discussed in detail.
Lead zirconate titanate
Zirconate
Polyvinylpyrrolidone
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Lead zirconate titanate
Electrospinning
Zirconate
Morphology
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Lead zirconate titanate
Zirconate
Calcium titanate
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Lead zirconate titanate
Lead oxide
Zirconate
Dielectric loss
Lead titanate
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We discuss three aspects of the development of Gbit density nonvolatile random access memories (NV RAMs) utilizing ferroelectric thin films and, in particular, SrBi2Ta2O9 (SBT) as the active storage medium.
Tantalate
Gigabit
Ferroelectric RAM
Bismuth
Non-Volatile Memory
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