New reverse-conducting IGBT (1200V) with revolutionary compact package
Kazutoshi TakahashiS. YoshidaShunsuke NoguchiH. KuribayashiNorihiro NashidaYusuke KobayashiHiroshi KobayashiKazuhiro MochizukiYoshinari IkedaO. Ikawa
16
Citation
5
Reference
10
Related Paper
Citation Trend
Abstract:
Fuji Electric developed a 1200V class RC-IGBT based on our latest thin wafer process. The performance of this RC-IGBT shows the same relationship between conduction loss and switching loss as our 6 th generation conventional IGBT and FWD. In addition its trade-off can be optimized for hard switching by lifetime killer. Calculations of the hard switching inverter loss and chip junction temperature (Tj) show that the optimized RC-IGBT can handle 35% larger current density per chip area. In order to utilize the high performance characteristics of the RC-IGBT, we assembled them in our newly developed compact package. This module can handle 58% higher current than conventional 100A modules at a 51% smaller footprint.Keywords:
Insulated-gate bipolar transistor
Footprint
Chip-scale package
The aim of this study is to achieve online monitoring of the junction temperature of double-sided-cooling insulated gate bipolar transistor (IGBT) power modules by using the on-state voltage under a high current to maximize the utilization of IGBT power chips. Online junction temperature measurement plays an important role in improving the reliability of the inverter with IGBT, increasing the power density of the motor controller of electric vehicles, and reducing the cost of electric vehicles.
Insulated-gate bipolar transistor
Gate driver
Power module
Cite
Citations (4)
A new R-series IGBT-intelligent power module (IGBT-IPM) named the R-IPM has been developed. This R-IPM consists solely of silicon semiconductor chips, called IPMCMs (intelligent power multi-chip modules). The exclusive ICs used in the IPM provide over-temperature protection by directly detecting the junction temperature (T/sub j/) of an IGBT chip. This is a worldwide first. This paper describes the features of the R-IPM and the T/sub j/ detecting function technology.
Insulated-gate bipolar transistor
Power module
Cite
Citations (9)
Press Pack IGBT(PP IGBT) devices often work under high voltage and high current working conditions, and a multi-chip parallel structure is often used inside the PP IGBT device package. In this structure, the multi-chip layout has an important influence on the temperature distribution of chips. In addition, the chip temperature is closely related to the reliability of the PP IGBT device. Therefore, it is of great significance to study the influence of the internal chip layout of the PP IGBT device on the temperature distribution of the chip. In this paper, the finite element model of the PP IGBT device is established, and the electro-thermal coupling simulation is carried out, and simulate the temperature change of each chip inside the device under the condition of power cycle. First, chip temperature distributions were compared for devices containing a single IGBT chip, four IGBT chips and nine IGBT chips. The junction temperature of the chip is shown as a function of time. Then, the influence of the chip separation distance on the temperature was considered, and the chip temperature distribution was compared under the layouts where each chip and the adjacent chips were separated by 2mm and 4mm, respectively. After analyzing the results of the finite element simulation, it is found that due to the close position of the multiple chips connected in parallel inside the PP IGBT device, thermal coupling effect between chips. This coupling effect affects the temperature distribution of the chip and makes the junction temperature higher. And the more chips and the closer the chip distance, the more obvious the effect of this coupling effect on the chip temperature distribution.
Insulated-gate bipolar transistor
Cite
Citations (1)
This paper reports, for the first time, the development of 500 V, 3 A single chip inverter ICs. The chip size of the IC is 7.1/spl times/5.2 mm/sup 2/, which is only 30% larger than that of 500 A, 1 A inverter ICs. The chip size reduction has been realized by 35% improvement in lateral IGBT on-resistance and an optimized layout of LIGBT unit cells and bonding pads.
Insulated-gate bipolar transistor
Cite
Citations (59)
Because of the fixed chip size of available sample devices a comparison of SiC-JFET and silicon IGBT with another fixed chip size necessitates the regard to the active area of the chip. The paper presents measurement results considering the active area and shows a comparison of inverter losses depending on junction temperature and switching frequency.
JFET
Insulated-gate bipolar transistor
Cite
Citations (2)
In this paper, an offline evaluation method for the cooling capability of three-phase insulated-gate bipolar transistor (IGBT) inverters is presented, which can better emulate real working conditions. With a properly designed sudden-stop control sequence, the conventional junction temperature monitoring method at a low current is used to calculate the junction temperature before the sudden stop of an inverter. This can solve the challenging switching loss calculation issue in conventional methods. Finally, the feasibility, control sequence, and electrical behaviors of the proposed method are validated through experimental tests.
Insulated-gate bipolar transistor
Sequence (biology)
Three-phase
Cite
Citations (2)
A new calculation method to estimate the power loss and the working temperature of IGBT and diode devices in an inverter is presented. This method is based on the measurement data of the IGBT's transient and steady state characteristics under different conditions and the thermal equivalent network model of the actual system. Finally, an experiment of a drive system including an inverter and a permanent magnet synchronous motor was done. The result shows that the calculation program is very effective for the thermal design of inverters.
Insulated-gate bipolar transistor
Transient (computer programming)
Power module
Power loss
Cite
Citations (16)
This paper investigates efficiency gains achieved using an 800 V DC bus and wideband gap silicon carbide (SiC) semiconductors for a light-duty electric vehicle (EV), rather than an insulated-gate bipolar transistor (IGBT) inverter with a 400 V bus as is commonly used for EVs. Analytical inverter loss models with 600 V and 1200 V IGBTs, and 1200 V hybrid SiC and 1200 V All-SiC semiconductors are incorporated into a Chevrolet Bolt EV model and simulated over standard drive cycles. Battery pack voltage variations throughout the drive cycles, as well as variations in junction temperature, resulted in 16 to 27 % increased loss compared to fixed voltage and temperature assumptions. To validate the models, experimental testing was performed on a 1200 V IGBT inverter and a 1200 V SiC inverter both powering 160+ kW rated traction machines. Experimentally measured loss was typically within 100 W of the model, demonstrating its accuracy. Going from a 400 V to an 800 V DC bus with IGBTs, EV range was modeled to increase 1.2 %, while an 800 V bus and all SiC inverter results in a range increase of 5.0%. An empirical loss model fitted to measured inverter data shows the analytical model estimates range within 6 km.
Insulated-gate bipolar transistor
Cite
Citations (6)
Insulated-gate bipolar transistor
Power cycling
Power density
Temperature cycling
Cite
Citations (18)
Press Pack Insulated Gate Bipolar Transistor (PP IGBT) is quite famous for the high power applications but lacks in-depth reliability research, evaluation of chip temperature distribution will be more meaningful than classical virtual junction temperature for reliability assessment. In this paper, an inverse method combining the experimental measurement and numerical solution, called multi-current VCE (T) method is applied to evaluate the single chip temperature distribution within PPI in the power cycling test, which extends the capability in chip temperature measurement of the conventional VCE (T) method. Finally, the calculated results are verified by the designed experimental measurement.
Insulated-gate bipolar transistor
Power cycling
Cite
Citations (1)