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We examined the change in photoluminescence spectra of porous Si when it is oxidized then deoxidized chemically. After both steps, photoluminescence shifted to higher frequencies and increased in intensity. These shifts to higher frequencies indicate the photoluminescence is a result of the quantum size effect. Moreover, the increase in photoluminescence intensity after oxidation suggests that termination by hydrogen on the porous Si surface does not always play a key role in the photoluminescence mechanism.
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In this work we investigate the excitonic properties of (4-FC6H4C2H4NH3)2PbI4 hybrid organic/inorganic thin films. We first use a standard point-by-point photoluminescence mapping. The maps formed using the photoluminescence intensity, line width, and broadening reveal the presence of structural defects. Using a statistical treatment of the data we found that the spatial fluctuations of the photoluminescence peak wavelengths are rather small compared to the photoluminescence line width. Moreover, we report the first direct observation of spatially resolved excitonic photoluminescence in this type of materials using dark-field imaging of white-light pumped photoluminescence. Owing to the rapid acquisition time of the dark-field images, their temperature dependence was studied, and the thermal behavior of the photoluminescence was investigated using this technique. We show that photoluminescence mapping combined with dark-field imaging and spectroscopy provides valuable information on the excitonic properties of hybrid organic/inorganic thin films.
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Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4μm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.
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Abstract Simultaneous measurement of photoluminescence intensity and photoluminescence decay time of porous silicon was used for optical detection of chemical species in gas phase. For the studied set of analytes we observed that quenching of photoluminescence intensity and shortening of photoluminescence decay time scale with the analyte concentration. Simultaneous acquisition of photoluminescence intensity and photoluminescence decay time enabled to improve reliability of the sensor response measurements. Different sensor sensitivity of photoluminescence intensity and decay time to the presence of chemical species makes possible to discriminate between various classes of organic molecules. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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