Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
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Long-wave infrared InAs/InAsSb type-II superlattice nBn photodetectors are demonstrated on GaSb substrates. The typical device consists of a 2.2 μm thick absorber layer and has a 50% cutoff wavelength of 13.2 μm, a measured dark current density of 5 × 10−4 A/cm2 at 77 K under a bias of −0.3 V, a peak responsivity of 0.24 A/W at 12 μm, and a maximum resistance-area product of 300 Ω cm2 at 77 K. The calculated generation-recombination noise limited specific detectivity (D*) and experimentally measured D* at 12 μm and 77 K are 1 × 1010 cm Hz1/2/W and 1 × 108 cm Hz1/2/W, respectively.Keywords:
Specific detectivity
Cutoff frequency
Johnson–Nyquist noise
A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the photodetector exhibits a peak responsivity of 1.48 A/W, corresponding to a quantum efficiency of 47% at −50 mV applied bias under front-side illumination, with a 50% cutoff wavelength of 4.4 µm. With an R × A of 12 783 Ω cm2 and a dark current density of 1.16 × 10−5 A/cm2 under −50 mV applied bias, the photodetector exhibits a specific detectivity of 7.1 × 1011 cm Hz1/2/W. At 300 K, the photodetector exhibits a dark current density of 0.44 A/cm2 and a quantum efficiency of 39%, resulting in a specific detectivity of 2.5 × 109 cm Hz1/2/W.
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Cutoff frequency
Indium arsenide
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We report the room temperature operation of 8–12 μm InSbBi long-wavelength infrared photodetectors. The InSbBi/InSb heterostructures were grown on semi-insulating GaAs (001) substrates by low pressure metalorganic chemical vapor deposition. The voltage responsivity at 10.6 μm was about 1.9 mV/W at room temperature and the corresponding Johnson noise limited detectivity was estimated to be about 1.2×106 cmHz1/2/W. The carrier lifetime derived from the voltage dependent responsivity measurements was about 0.7 ns.
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Johnson–Nyquist noise
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In this research, an optimization approach is presented to decrease the dark current in GaAs/AlGaAs QWIPs.The dark current noise is reduced by increasing Al density in barriers, decreasing detector dimensions and increasing the periodic length of the structure.In addition, increasing the number of periods can reduce both the dark current and responsivity.Therefore, devices can be optimally designed through judicious choice of these parameters.An optimal photodetector structure is designed and simulated to achieve low dark current (11nA) and detectivity of 1.4×10¹²cm(Hz) 1/2 /W which is an order of magnitude greater than the present values.
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Infrared detector
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We demonstrated a GaAs/AlGaAs-based far-infrared quantum well infrared photodetector at a wavelength of λ=84 μm. The relevant intersubband transition is slightly diagonal with a dipole matrix element of 3.0 nm. At 10 K, a responsivity of 8.6 mA/W and a detectivity of 5×107 cm √Hz/W have been achieved; and successful detection up to a device temperature of 50 K has been observed. Being designed for zero bias operation, this device profits from a relatively low dark current and a good noise behavior.
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The InAsSb-based photodetectors covering the whole mid-infrared wavelength at 150 K have been modeled, successfully fabricated, and characterized. In this work, we increased the Sb composition in InAs1−xSbx to extend the cut-off wavelength; simultaneously, the novel upside-down structure was adopted to decrease the dark current to ensure good performance of the device at high operating temperature. The growth sequence of the upside-down InAs0.81Sb0.19/AlAsSb material system was reversed to the conventional nBn structure, and the AlSb/AlAs0.08Sb0.92 electron compound barrier was grown before the InAs0.81Sb0.19 active layer. At 150 K and 0.8 V forward bias, the fabricated photodetector demonstrates a dark current density around 3.46 × 10−4 A/cm2, a peak responsivity up to 1.89 A/W, and a quantum efficiency up to 56% at 4.2 µm, corresponding to 1.23 × 1011 cm Hz1/2/W detectivity.
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High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated. At 300 K, the device exhibits a 50% cut-off wavelength of ∼ 2.1 μm as predicted from the band structure calculation; the device responsivity peaks at 0.85 A/W, corresponding to a quantum efficiency (QE) of 56% for 2.0 μm-thick absorption region. The dark current density of 1.03 × 10 −3 A/cm 2 is obtained under 50 mV applied bias. The device exhibits a saturated dark current shot noise limited specific detectivity ( D *) of 3.29 × 10 10 cm⋅Hz 1/2 /W (at a peak responsivity of 2.0 μm) under –50 mV applied bias.
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Indium arsenide
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An infrared photodetector using the structure of a 15-period superlattice (SL) integrated with 50-period multiple quantum wells (MQWs) is investigated. The MQWs are utilized to reduce the noise current power and to add the response range. From the results of current ratio and response, the photocurrent of the SL is not reduced by the additional MQWs but the dark current is. Hence, due to the low noise gain and low dark current, the maximum detectivity (D * ) can occur at low negative bias. In addition, the photovoltaic response even appears at 80 K. It is observed that the photoelectron transport directions from the SL and the MQWs are opposite under zero bias. In comparison with the SL with a single barrier, this structure also demonstrates the higher photocurrent and lower dark current. From our experimental results, this structure is appropriate for the operation at low bias and high temperature. However, the tradeoff is the small operational voltage range
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Biasing
Johnson–Nyquist noise
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Quantum Efficiency
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We demonstrate the operation of InSbBi infrared photoconductive detectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The fabricated photodetector showed a cutoff wavelength of 7.7 μm at 77 K. The responsivity of the InSbBi photodetector at 7 μm was about 3.2 V/W at 77 K. The corresponding Johnson-noise limited detectivity was 4.7×108 cm Hz1/2/W. The carrier lifetime was estimated to be about 86 ns from the voltage-dependent responsivity measurements.
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In this paper we present a novel long wave length infrared quantum dot photodetector. A cubic shaped 6nm GaN quantum dot (QD) within a large 18 nm Al(0.2)Ga(0.8)N QD (capping layer) embedded in Al(0.8)Ga(0.2)N has been considered as the unit cell of the active layer of the device. Single band effective mass approximation has been applied in order to calculate the QD electronic structure. The temperature dependent behavior of the responsivity and dark current were presented and discussed for different applied electric fields. The capping layer has been proposed to improve upon the dark current of the detector. The proposed device has demonstrated exceptionally low dark current, therefore low noise, and high detectivity. Excellent specific detectivity (D*) up to approximately 3 x 10(8)CmHz(1/ 2)/W is achieved at room temperature.
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